Spin-orbit-torque type magnetization rotating element, spin-orbit-torque type magnetoresistance effect element, and magnetic memory

Patent metadata

Field	Value
Publication number	US-11211547-B2
Application number	US-201916493419-A
Country	US
Kind code	B2
Filing date	Feb 6, 2019
Priority date	Feb 28, 2018
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

A spin-orbit-torque type magnetization rotating element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature, and an oxygen concentration in a region on the first ferromagnetic layer side and an oxygen concentration in a region opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof.

First claim

What is claimed is:

1. A spin-orbit-torque type magnetization rotating element, comprising:
a spin-orbit torque wiring extending in a first direction; and
a first ferromagnetic layer laminated on the spin-orbit torque wiring,
wherein the spin-orbit torque wiring consists of a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature,
an oxygen concentration in a region of the spin-orbit torque wiring on a first ferromagnetic layer side and an oxygen concentration in a region of the spin-orbit torque wiring opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof, and
the spin-orbit torque wiring includes a portion where an oxygen concentration monotonously increases or monotonically decreases in the thickness direction of the spin-orbit torque wiring.

2. The spin-orbit-torque type magnetization rotating element according to claim 1 , wherein the metal oxide includes at least one element selected from the group consisting of Cr, Fe, Ir, W, Mo, Re, Ti, V, Nb, Pd, Ru, and Sn.

3. The spin-orbit-torque type magnetization rotating element according to claim 2 , wherein the metal oxide includes at least one element selected from the group consisting of Ir, W, Pd, Mo, Nb, and Re.

4. The spin-orbit-torque type magnetization rotating element according to claim 1 , wherein, in a view of the thickness direction, an oxygen concentration at a first point overlapping the first ferromagnetic layer of the spin-orbit torque wiring is lower than an oxygen concentration at a second point not overlapping the first ferromagnetic layer.

5. A spin-orbit-torque type magnetoresistance effect element, comprising:
the spin-orbit-torque type magnetization rotating element according to claim 1 ;
a second ferromagnetic layer facing the first ferromagnetic layer; and
a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer.

6. A magnetic memory, comprising:
a plurality of the spin-orbit-torque type magnetoresistance effect elements according to claim 5 .

7. A spin-orbit-torque type magnetization rotating element, comprising:
a spin-orbit torque wiring extending in a first direction; and
a first ferromagnetic layer laminated on the spin-orbit torque wiring,
wherein the spin-orbit torque wiring consists of a metal oxide whose electrical conductivity properties exhibit a metallic behavior with respect to temperature,
an oxygen concentration in a region of the spin-orbit torque wiring on a first ferromagnetic layer side and an oxygen concentration in a region of the spin-orbit torque wiring opposite to the first ferromagnetic layer are asymmetrical with respect to a center of the spin-orbit torque wiring in a thickness direction thereof, and
in a view of the thickness direction, an oxygen concentration at a first point overlapping the first ferromagnetic layer of the spin-orbit torque wiring is lower than an oxygen concentration at a second point not overlapping the first ferromagnetic layer.

8. The spin-orbit-torque type magnetization rotating element according to claim 7 , wherein the spin-orbit torque wiring includes a portion where an oxygen concentration monotonously increase or monotonically decrease in the thickness direction of the spin-orbit torque wiring.

Assignees

• Tdk Corp

Inventors

• Ashida Takuya
• SHIOKAWA Yohei
• Sasaki Tomoyuki

Classifications

• H10D48/40

  Devices controlled by magnetic fields · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H01F10/329

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title