AND gate based on ballistic electrons

Patent metadata

Field	Value
Publication number	US-11211482-B2
Application number	US-202016808423-A
Country	US
Kind code	B2
Filing date	Mar 4, 2020
Priority date	Mar 4, 2020
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

An AND-gate device having a structure arms, a channel from a first arm and a second arm extends to a channel of a third arm. When a current from a first voltage flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of electrons is generated that flows through the third arm channel from the channel of the first and second arms to the third arm channel. At least two input structures are positioned in series in the third arm. Each input structure includes a fin structure having a gate controlled by an individual voltage applied to an electrode which induces an electric-field structure that shifts by an amount of the voltage. The controllable gate opening changes a depletion width, causing an amount of flow of ballistic electrons to pass through the channel. A sensor detects the ballistic electrons.

First claim

What is claimed is:

1. An AND-gate device, comprising:
an epitaxial layer having a III-N heterostructure forming a channel, wherein the III-N heterostructure includes an InAlN/GaN composition formed by an InAIN layer and a GaN layer, wherein a concentration of In in the InAIN layer is tuned to lattice match the InAIN layer with the GaN layer, allowing electron mobility to generate ballistic electrons; and
at least two fin structures including a first fin structure and a second fin structure positioned in series in the channel,
wherein the first fin structure includes a first gate controlled by a first voltage and the second fin structure includes a second gate controlled by a second voltage;
wherein the first gate is formed transversely to a longitudinal axis of the channel, and is controlled using the first voltage applied over the first gate to induce an energy-field opening a first flow of ballistic electrons passing under the first gate, which in turn changes a depletion width, subjecting the ballistic electrons to interference;
wherein the second gate is formed transversely to the longitudinal axis of the channel, and is controlled using the second voltage applied over the second gate to induce a second energy-field opening a second flow of ballistic electrons passing under the second gate, which in turn changes a second depletion width, subjecting the ballistic electrons to interference; and

wherein the AND-gate device is turned on by applying the first voltage to the first gate and the second voltage to the second gate, and turned off by not applying the first voltage to the first gate, not applying the second voltage to the second gate, or both not applying the first voltage to the first gate and not applying the second voltage to the second gate.

2. The AND-gate device of claim 1 , further comprising:
at least one sensor located at the end of the channel and operatively connected to an ohmic contact of the channel serving as an output terminal to detect a conductance.

3. The AND-gate device of claim 2 , having a first arm, a second arm and a third arm arranged to form the channel in the third arm such that a current flowing from a first electrode of the first arm to a second electrode of the second arm allows generating the flow of the ballistic electrons through the channel in the third arm.

4. The AND-gate device of claim 3 , wherein the first and second arms are configured as a cross shaped structure, to generate the flow of the ballistic electrons, further comprising:
a fourth arm that extends along a vertical axis above the second arm.

5. The AND-gate device of claim 3 , wherein the detected conductance is associated with an order of magnitude, such that the order of magnitude changes depending upon the first voltage applied to the first gate and the second voltage applied to the second gate.

6. The AND-gate device of claim 1 , wherein the ballistic electrons are flowing at a high velocity of about 2×10 7 cm. sec −1 .

7. The AND-gate device of claim 1 , wherein the first voltage and the second voltage are connected to a same ground terminal.

8. The AND-gate device of claim 1 , wherein at least one of the first fin structure and the second fin structure is a U-shaped structure having a lateral portion and two upright portions integrally formed with, and extending along a portion of the lateral portion and forming the U-shaped structure with a U-shaped cross-section, the U-shaped structure includes the first gate or the second gate and a layer of an oxide material wrapped along an interior surface of the first gate or the second gate.

9. A quantum computer including the AND-gate device of claim 1 .

10. The quantum computer of claim 9 , comprising:
an NbN layer grown on top of the GaN layer.

11. An AND-gate device including a structure having a first arm, a second arm, a third arm, and a fourth arm, such that a channel formed by the first and second arms extends to a channel of the third arm, and wherein when a current is flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of ballistic electrons flow through the channel of third arm from the channel formed by the first and second arms, wherein the first electrode and the second electrode are connected to a same ground terminal, wherein the fourth arm is positioned to extend along a vertical axis above the second arm, comprising:
at least two input structures including a first fin structure and a second fin structure positioned in series in the channel of the third arm,
wherein the first fin structure includes a first gate formed transversely to a first longitudinal axis of the first fin structure, and is controlled using a first voltage, wherein the first fin structure is formed to induce an electric-field shifted proportionally to an amount of the first voltage to control an opening of the first gate such that the flow of ballistic electrons is passing through;
wherein the second fin structure includes a second gate formed transversely to a second longitudinal axis of the second fin structure, and is controlled using a second individual voltage, wherein the second fin structure is formed to induce a second electric-field shifted proportionally to an amount of the second voltage to control an opening of the second gate such that the flow of ballistic electrons is passing through,
at least one sensor positioned at an end of the third arm, such that as the first voltage is applied to the first gate and the second voltage is applied to the second gate, the at least one sensor detects conductance,
wherein the AND-gate device is turned on by applying the first voltage to the first gate and the second voltage to the second gate, and turned off by not applying the first voltage to the first gate, not applying the second voltage to the second gate, or both not applying the first voltage to the first gate and not applying the second voltage to the second gate.

Assignees

• Mitsubishi Electric Res Laboratories Inc

Inventors

• Teo Koon Hoo
• Chowdhurry Nadim

Classifications

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D64/512

  Disposition of the gate electrodes, e.g. buried gates · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title

• H10D30/4755

  having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs · CPC title

• H10D30/475 Primary

  having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs · CPC title