SiC composite substrate and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-11208719-B2
Application number	US-202016743476-A
Country	US
Kind code	B2
Filing date	Jan 15, 2020
Priority date	Sep 14, 2015
Publication date	Dec 28, 2021
Grant date	Dec 28, 2021

Abstract

Provided is an SiC composite substrate 10 having a monocrystalline SiC layer 12 on a polycrystalline SiC substrate 11, wherein: some or all of the interface at which the polycrystalline SiC substrate 11 and the monocrystalline SiC layer 12 are in contact is an unmatched interface I12/11 that is not lattice-matched; the monocrystalline SiC layer 12 has a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate 11, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane 11p) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrate 11 is randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer 12. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

First claim

The invention claimed is:

1. An SiC composite substrate comprising a polycrystalline SiC substrate and a monocrystalline SiC layer thereon, wherein the entirety or a part of the interface of the polycrystalline SiC substrate in abutment with the monocrystalline SiC layer is a mismatch interface that is not lattice-matched, the monocrystalline SiC layer has a smooth front surface and a surface on the side of the interface with the polycrystalline SiC substrate that is more rugged than the front surface, said rugged surface of the monocrystalline SiC layer is composed of oblique surface segments randomly oriented with reference to a direction normal to the front surface of the monocrystalline SiC layer, and the close-packed planes of polycrystalline SiC crystals in the polycrystalline SiC substrate are parallel to said oblique surface segments and correspondingly randomly oriented with reference to a direction normal to the front surface of the monocrystalline SiC layer.

2. The SiC composite substrate of claim 1 wherein, where the close-packed plane of the crystal lattice of each crystal grain in the polycrystalline SiC substrate is oriented at a deflection angle θ relative to the front surface of the monocrystalline SiC layer, the proportion of crystal grains satisfying θ≤−2° or 2°≤θ among all the crystal grains of the polycrystalline SiC substrate is at least 32%.

3. The SiC composite substrate of claim 2 wherein said proportion of crystal grains satisfying θ≤−2° or 2°≤θ is at least 50%.

4. The SiC composite substrate of claim 1 wherein the polycrystalline SiC substrate has a thickness of 100 μm to 650 μm.

5. The SiC composite substrate of claim 1 wherein the monocrystalline SiC layer has a thickness of 100 nm to 1 μm.

6. The SiC composite substrate of claim 1 wherein the close-packed plane of the crystal lattice of the monocrystalline SiC layer has a deflection angle of from more than 0° to 10° at its interface with the polycrystalline SiC substrate.

7. The SiC composite substrate of claim 1 wherein the polycrystalline SiC in the polycrystalline SiC substrate is in the form of cubic crystals in which the close-packed plane is the {1 1 1} plane.

Assignees

• Shinetsu Chemical Co
• Cusic Inc

Inventors

• Kubota Yoshihiro
• Akiyama Shoji
• Nagasawa Hiroyuki

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P90/00 Primary

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P30/20

  into semiconductor materials, e.g. for doping · CPC title