Laser bar and semiconductor laser and method of producing laser bars and semiconductor lasers

Patent metadata

Field	Value
Publication number	US-11205885-B2
Application number	US-201816490171-A
Country	US
Kind code	B2
Filing date	Apr 16, 2018
Priority date	Apr 20, 2017
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

A method of producing laser bars or semiconductor lasers includes providing a carrier composite to form a plurality of carriers for the laser bars or for the semiconductor lasers, providing a semiconductor body composite including a common substrate and a common semiconductor layer sequence grown thereon, forming a plurality of separation trenches through the common semiconductor layer sequence such that the semiconductor body composite is divided into a plurality of semiconductor bodies, applying the semiconductor body composite to the carrier composite such that the separation trenches face the carrier composite, thinning or removing the common substrate, and singulating the carrier composite into a plurality of carriers, wherein a plurality of semiconductor bodies are arranged on one of the carriers, and the semiconductor bodies arranged on one common carrier are laterally spaced apart from one another by the separation trenches.

First claim

The invention claimed is:

1. A method of producing laser bars or semiconductor lasers comprising:
providing a carrier composite to form a plurality of carriers for the laser bars or for the semiconductor lasers;
providing a semiconductor body composite comprising a common substrate and a common semiconductor layer sequence grown thereon;
forming a plurality of separation trenches through the common semiconductor layer sequence such that the semiconductor body composite is divided into a plurality of semiconductor bodies;
applying the semiconductor body composite to the carrier composite such that the separation trenches face the carrier composite;
thinning or removing the common substrate; and
singulating the carrier composite into the plurality of carriers, wherein the plurality of semiconductor bodies are arranged on one of the carriers, and the semiconductor bodies arranged on one common carrier are laterally spaced apart from one another by the separation trenches,
wherein the method further comprises at least one of features i-vi:
i. the separation trenches are filled with an electrically insulating material before the semiconductor body composite is applied to the carrier composite, and the electrically insulating material forms an insulating layer so that the semiconductor lasers resulting therefrom already have an insulating layer on their side faces right after the singulation;
ii. the semiconductor body composite comprises an inner marking layer, the separation trenches are formed up to the marking layer or throughout the marking layer, and the substrate is thinned or removed from a bottom surface of the substrate remote from the semiconductor layer sequence up to the marking layer;
iii. the substrate is thinned by at least 60% of its original vertical layer thickness and after thinning has a reduced vertical layer thickness of 1 μm to 100 μm;
iv. the semiconductor layer sequence has an n-side facing away from the carrier composite, a p-side facing towards the carrier composite and an active zone located there between, the plurality of semiconductor bodies on the common carrier have a common p-side contact layer arranged between the common carrier and the plurality of semiconductor bodies, each of the plurality of semiconductor bodies has an n-side contact location, and the n-side contact locations of different semiconductor bodies are spatially separated from one another and the plurality of semiconductor bodies are individually controllable via the n-side contact locations;
v. predetermined breaking locations are formed at least partially in the common substrate of the semiconductor body composite, and a thermal variation is carried out prior to the singulation of the carrier composite so that due to the resulting thermally induced stresses, the semiconductor composite breaks into at least one of rows or columns of the plurality of semiconductor bodies of the to be produced laser bars at the predetermined breaking locations; and
vi. a transistor is formed at least partially within the carrier of the semiconductor laser or of the laser bar.

2. The method according to claim 1 , further comprising feature i, wherein the electrically insulating material is applied flatly to the semiconductor layer sequence so that the insulating layer is formed such that it not only fills the separation trenches but completely covers the semiconductor layer sequence except for electrical contact locations.

3. The method according to claim 1 , wherein the separation trenches are formed throughout the semiconductor layer sequence into the common substrate.

4. The method according to claim 1 , wherein predetermined breaking lines are formed in the semiconductor body composite,
the predetermined breaking lines define the geometry of the laser bars to be produced, and
in a plan view of the semiconductor body composite, the predetermined breaking lines run transversely or parallel to the separation trenches.

5. The method according to claim 1 , wherein the laser bar is singulated at the separation trenches to form a plurality of semiconductor lasers, each of the semiconductor lasers having a carrier and a single semiconductor body arranged thereon.

6. The method according to claim 1 , wherein the semiconductor body composite is based on GaAs and the carrier composite is a silicon carrier.

7. A semiconductor laser comprising a carrier and a semiconductor body arranged thereon, wherein
the semiconductor body has a vertically extending lateral front face,
the semiconductor body comprises a first semiconductor layer, a second semiconductor layer and an active zone disposed in a vertical direction between the first and second semiconductor layers,
in operation of the semiconductor laser, the active zone is configured to generate electromagnetic radiation, a main emission direction of the semiconductor laser being oriented transversely to the front face,
the semiconductor laser is free of a growth substrate or on a top surface of the semiconductor body facing away from the carrier, has a thin growth substrate having a vertical layer thickness of 1 μm to 100 μm, and
wherein the semiconductor laser comprises at least one of features i-iii:
i. a transistor is at least partially formed within the carrier and the transistor electrically connects directly to the semiconductor body throughout the carrier;
ii. in a plan view, the semiconductor body has a lateral protrusion with respect to the carrier, and the front face of the semiconductor body is formed by a vertical surface of the protrusion and a lateral extension of the lateral protrusion with respect to the carrier is least 1 μm; and
iii. the semiconductor body has a rear side facing away from the front face and a vertical side face adjoining the front face and the rear side, the front face and the rear side are mirrored to form a resonator, and the side face is covered with an insulating layer.

8. A laser bar comprising a plurality of semiconductor lasers according to claim 7 , wherein
carriers of the semiconductor lasers comprise a common continuous carrier,
the semiconductor lasers comprise semiconductor bodies having structure of the same kind, and
the semiconductor bodies of the neighboring semiconductor lasers are adjacent to an insulating layer and spaced apart from each other by the insulating layer.

9. The laser bar according to claim 8 , having a p-side contact layer as a common p-side contact layer for all semiconductor bodies of the laser bar, wherein the common p-side contact layer is arranged in the vertical direction between the common continuous carrier and the semiconductor bodies.

10. A semiconductor laser comprising a carrier and a semiconductor body arranged thereon, wherein
the semiconductor body has a vertically extending lateral front face,
the semiconductor body comprises a first semiconductor layer, a second semiconductor layer and an active zone disposed in a vertical direction between the first and second semiconductor layers,
in operation of the semiconductor laser, the active zone is configured to generate electromagnetic radiation, a main emission direction of the semiconductor laser being oriented transversely to the front face,
the semiconductor laser is free of a growth substrate or on a top surface of the semiconductor body facing away from the carrier, has a thin growth substrate having a vertical layer thickness of 1 μm to 100 μm,
a transistor or a plurality of transistors is/are generated at least partially or completely within the carrier of the semiconductor laser, and
the transistor electrically connects directly to the semiconductor body throughout the carrier.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Enzmann Roland Heinrich
• Halbritter Hubert
• Bröll Markus

Classifications

• H01S5/223

  Buried stripe structure {(H01S5/227 takes precedence)} · CPC title

• H01S5/0235

  Method for mounting laser chips · CPC title

• H01S5/0202 Primary

  Cleaving · CPC title

• H01S2301/176

  Specific passivation layers on surfaces other than the emission facet · CPC title

• H01S5/4031

  Edge-emitting structures · CPC title