Optoelectronic component

Patent metadata

Field	Value
Publication number	US-11205641-B2
Application number	US-201816753347-A
Country	US
Kind code	B2
Filing date	Sep 20, 2018
Priority date	Oct 4, 2017
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

An optoelectronic component may include four semiconductor chips arranged on a substrate. A first semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 610 to about 650 nm during operation. A second semiconductor chip may be configured to emit electromagnetic radiation with a dominant wavelength ranging from about 450 to about 475 nm during operation. A third semiconductor chip may be configured to emit electromagnetic radiation with color space coordinates of 0.3231±0.005 and 0.5408±0.005 in the CIE color space during operation. A fourth semiconductor chip may emit electromagnetic radiation having color space coordinates of 0.5638±0.005 and 0.4113±0.005 in the CIE color space during operation. The third and fourth semiconductor chips may have a conversion layer configured to convert a wavelength of the electromagnetic radiation emitted by the active region.

First claim

The invention claimed is:

1. An optoelectronic component comprising:
a first semiconductor chip;
a second semiconductor chip;
a third semiconductor chip; and
a fourth semiconductor chip; wherein
the first semiconductor chip, the second semiconductor chip, the third semiconductor chip, and the fourth semiconductor chip are arranged on a carrier;
the first semiconductor chip is configured to emit electromagnetic radiation having a dominant wavelength ranging from about 610 nm to about 650 nm during operation; wherein the first semiconductor chip is free of a conversion element;
the first semiconductor chip comprises an active region configured to emit electromagnetic radiation having a dominant wavelength ranging from about 610 nm to about 650 nm during operation of the optoelectronic component;
the second semiconductor chip is configured to emit electromagnetic radiation having a dominant wavelength ranging from about 450 nm to about 475 nm during operation;
the third semiconductor chip is configured to emit electromagnetic radiation having color space coordinates of 0.3231±0.005 and 0.5408±0.005 in the CIE color space during operation;
the fourth semiconductor chip is configured to emit electromagnetic radiation having color space coordinates of 0.5638±0.005 and 0.4113±0.005 in the CIE color space during operation; and
the third semiconductor chip and/or the fourth semiconductor chip have a conversion layer configured to convert a wavelength of the electromagnetic radiation emitted by the active region.

2. The optoelectronic component as claimed in claim 1 , wherein the third semiconductor chip and/or the fourth semiconductor chip have an active region configured to emit electromagnetic radiation having a dominant wavelength ranging from about 430 nm to about 490 nm during operation of the optoelectronic component.

3. The optoelectronic component as claimed in claim 1 , wherein the first semiconductor chip, the second semiconductor chip, the third semiconductor chip, and the fourth semiconductor chip are arranged in two rows and two columns on the carrier.

4. The optoelectronic component as claimed in claim 1 , wherein the electromagnetic radiation emitted by the first semiconductor chip, the second semiconductor chip, the third semiconductor chip, and the fourth semiconductor chip during operation produces a white mixed light.

5. The optoelectronic component as claimed in claim 4 , wherein a color temperature of the white mixed light is adjustable, wherein a color rendering index of the white mixed light is at least 90 for each adjustable color temperature.

6. The optoelectronic component as claimed in claim 4 , wherein a color temperature of the white mixed light is adjustable; and wherein the color temperature ranges from 3000 K to 7000 K.

7. The optoelectronic component as claimed in claim 4 , wherein a color rendering index Ra of the white mixed light is at least 95.

8. The optoelectronic component as claimed in claim 4 , wherein a color rendering index R 9 of the white mixed light is at least 93.

9. The optoelectronic component as claimed in claim 1 , wherein the first semiconductor chip is configured to emit electromagnetic radiation having a dominant wavelength ranging from about 620 nm to about 640 nm during operation.

10. The optoelectronic component as claimed in claim 1 , wherein the second semiconductor chip is configured to emit electromagnetic radiation having a dominant wavelength ranging from about 460 nm to about 465 nm during operation.

11. The optoelectronic component as claimed in claim 1 , wherein the first semiconductor chip is free of a conversion layer.

Assignees

• Osram Oled Gmbh

Inventors

• Morgott Stefan
• Schnabel Wolfgang

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/851

  Wavelength conversion means · CPC title

• H05B45/20

  Controlling the colour of the light · CPC title

• H01L33/62

  Electricity · mapped topic