Member for semiconductor manufacturing apparatus and method for producing the same

Patent metadata

Field	Value
Publication number	US-11205584-B2
Application number	US-201715719708-A
Country	US
Kind code	B2
Filing date	Sep 29, 2017
Priority date	Oct 14, 2016
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

A method for producing a member for a semiconductor manufacturing apparatus includes (a) a step of providing an electrostatic chuck, a supporting substrate, and a metal bonding material, the electrostatic chuck being made of a ceramic and having a form of a flat plate, the supporting substrate including a composite material having a difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic of 0.2×10−6/K or less in absolute value, and (b) a step of interposing the metal bonding material between a concave face of the supporting substrate and a face of the electrostatic chuck opposite to a wafer mounting face, and thermocompression bonding the supporting substrate and the electrostatic chuck at a predetermined temperature to deform the electrostatic chuck to the shape of the concave face.

First claim

What is claimed is:

1. A member for a semiconductor manufacturing apparatus comprising:
an electrostatic chuck having a wafer mounting face, the electrostatic chuck being made of a ceramic;
a supporting substrate having a spherically concave face with the center being lower than the circumference, the supporting substrate, is only a single substrate made of a solid material including a composite material having a difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic of 0.2×10 −6 /K or less in absolute value; and
only a single metal bonding layer, which has a thickness of about 100 μm, disposed so as to bond a face of the electrostatic chuck opposite to the wafer mounting face to the concave face of the supporting substrate while the electrostatic chuck is deformed to the shape of the concave face, wherein the single metal bonding layer is in direct contact with both the face of the electrostatic chuck opposite to the wafer mounting face and the concave face of the supporting substrate, such that the single metal bonding layer is configured to have a uniform thickness between an entirety of the face of the electrostatic chuck opposite to the wafer mounting face and an entirety of the concave face of the supporting substrate, and the depth at the lowest point in the concave face is 40 to 60 μm.

2. The member for a semiconductor manufacturing apparatus according to claim 1 ,
wherein the ceramic is alumina,
the composite material is a material containing 37 to 60 mass % silicon carbide and amounts, each smaller than the amount in mass % of the silicon carbide, of titanium silicide, titanium silicon carbide and titanium carbide, and
the single metal bonding layer includes an Al-Si-Mg material or an Al-Mg material.

3. The member for a semiconductor manufacturing apparatus according to claim 1 , wherein the thickness of the electrostatic chuck is 2 mm or more and 5 mm or less, and
the thickness of the supporting substrate is 7 mm or more and 15 mm or less.

Assignees

• Ngk Insulators Ltd

Inventors

• Takebayashi Hiroshi

Classifications

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/70

  for supporting or gripping · CPC title

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title