Ion implanter and beam profiler

Patent metadata

Field	Value
Publication number	US-11205560-B2
Application number	US-202017085458-A
Country	US
Kind code	B2
Filing date	Oct 30, 2020
Priority date	Nov 1, 2019
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

An ion implanter includes a beam scanner that performs a scanning with an ion beam in a scanning direction perpendicular to a traveling direction of the ion beam, and a beam profiler that is disposed downstream of the beam scanner and measures a beam current distribution of the ion beam when the scanning by the beam scanner is performed. The beam profiler includes an aperture array that includes a first aperture and a second aperture, a cup electrode array that is disposed to be fixed with respect to the aperture array, the cup electrode array including a first cup electrode and a second cup electrode, and a plurality of magnets.

First claim

What is claimed is:

1. An ion implanter comprising:
a beam scanner that performs a scanning with an ion beam in a scanning direction perpendicular to a traveling direction of the ion beam; and
a beam profiler that is disposed downstream of the beam scanner and measures a beam current distribution of the ion beam when the scanning by the beam scanner is performed,
wherein the beam profiler includes
an aperture array that includes a first aperture which provides a first beam portion of the ion beam and a second aperture which has a shape different from that of the first aperture when viewed from an upstream side in the traveling direction and provides a second beam portion of the ion beam,
a cup electrode array that is disposed to be fixed with respect to the aperture array, the cup electrode array including a first cup electrode which defines a first cavity and is disposed such that the first beam portion is incident from the first aperture through the first cavity and a second cup electrode which defines a second cavity and is disposed such that the second beam portion is incident from the second aperture through the second cavity, and
a plurality of magnets that apply a magnetic field to the first cavity and the second cavity along an in-plane direction in a plane perpendicular to the traveling direction.

2. The ion implanter according to claim 1 ,
wherein the plurality of magnets are disposed side by side with the first cup electrode and the second cup electrode in the scanning direction and apply the magnetic field to the first cavity and the second cavity along the scanning direction.

3. The ion implanter according to claim 1 ,
wherein the plurality of magnets are disposed such that opposite magnetic poles of the respective magnets are alternately arranged along the scanning direction.

4. The ion implanter according to claim 1 ,
wherein the plurality of magnets are disposed alternately with the first cup electrode and the second cup electrode in the scanning direction.

5. The ion implanter according to claim 1 ,
wherein the plurality of magnets are disposed such that each of the magnets is adjacent, in the scanning direction, to the first cup electrode, the second cup electrode, or both of the first cup electrode and the second cup electrode.

6. The ion implanter according to claim 1 ,
wherein the beam profiler includes a yoke that magnetically couples two of the plurality of magnets disposed at both ends in the scanning direction to each other.

7. The ion implanter according to claim 1 ,
wherein the beam profiler includes a first cup electrode array, a second cup electrode array, a plurality of first magnets, and a plurality of second magnets,
the first cup electrode array and the second cup electrode array are disposed side by side with each other in the scanning direction,
the plurality of first magnets apply the magnetic field to the first cavity and the second cavity in a first direction along the scanning direction in the first cup electrode array, and
the plurality of second magnets apply the magnetic field to the first cavity and the second cavity in a second direction along the scanning direction in the second cup electrode array, the second direction being opposite to the first direction.

8. The ion implanter according to claim 1 ,
wherein the aperture array includes a plurality of the first apertures arranged in a beam width direction of the ion beam, which is perpendicular to the scanning direction and the traveling direction,
the cup electrode array includes a plurality of the first cup electrodes arranged in the beam width direction so as to correspond to the plurality of first apertures,
each of the plurality of first apertures provides each of a plurality of the first beam portions of the ion beam,
each of the plurality of first cup electrodes defines each of a plurality of the first cavities, and
each of the plurality of first cup electrodes is disposed such that each of the plurality of first beam portions is incident from each of the plurality of first apertures through each of the plurality of first cavities.

9. The ion implanter according to claim 8 ,
wherein the plurality of first apertures are disposed in at least two rows such that respective positions of the first apertures in one row are shifted from respective positions of first apertures in another row in the beam width direction, and
when viewed from the scanning direction, the plurality of first apertures in the at least two rows are arranged with no gapping between each other or partially overlapping each other in the beam width direction.

10. The ion implanter according to claim 1 ,
wherein the first aperture is elongated in the scanning direction, and
the second aperture is elongated in a beam width direction of the ion beam perpendicular to the scanning direction and the traveling direction.

11. The ion implanter according to claim 1 ,
wherein the aperture array includes a plurality of the second apertures arranged in the scanning direction,
the cup electrode array includes a plurality of the second cup electrodes arranged in the scanning direction so as to correspond to the plurality of second apertures,
each of the plurality of second apertures provides each of a plurality of the second beam portions of the ion beam,
each of the plurality of second cup electrodes defines each of a plurality of the second cavities, and
each of the plurality of second cup electrodes is disposed such that each of the plurality of second beam portions is incident from each of the plurality of second apertures through each of the plurality of second cavities.

12. The ion implanter according to claim 1 ,
wherein the first aperture and the second aperture are disposed to avoid a place, which is irradiated with the ion beam when the scanning by the beam scanner is not performed.

13. The ion implanter according to claim 1 ,
wherein the first cavity expands in a direction perpendicular to the traveling direction as going away from the first aperture in the traveling direction and/or the second cavity expands in a direction perpendicular to the traveling direction as going away from the second aperture in the traveling direction.

14. The ion implanter according to claim 1 ,
wherein the beam profiler includes a front plate that is disposed as a front surface of the beam profiler, which is irradiated with the ion beam, and the first aperture and the second aperture are formed in the front plate, and
a cup electrode/magnet row formed by arranging the first cup electrode, the second cup electrode, and the plurality of magnets in the scanning direction is disposed downstream of the front plate.

15. The ion implanter according to claim 14 ,
wherein the beam profiler includes a cooling plate disposed between the front plate and the cup electrode/magnet row.

16. The ion implanter according to claim 14 ,
wherein the beam profiler includes a cooling block that at least partially surrounds the cup electrode/magnet row, and
the cup electrode/magnet row and the cooling block are disposed inside of a yoke that magnetically couples two of the plurality of magnets disposed at both ends in the scanning direction to each other.

17. The ion implanter according to claim 1 ,
wherein the beam profiler is disposed in the most downstream of a beamline of the ion implanter.

18. A beam profiler comprising:
an aperture array that includes a first aperture which provides a first beam portion of an ion beam and a second aperture which has a shape different from

Assignees

• Sumitomo Heavy Industries Ion Tech Co Ltd

Inventors

• Potkins David Edward
• Jackle Phillip Thomas

Classifications

• H10P72/04

  Apparatus for manufacture or treatment · CPC title

• H01J2237/31703

  Dosimetry · CPC title

• H01J2237/24405

  Faraday cages · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J2237/24542

  Beam profile · CPC title