Structures and methods for RF de-embedding

Patent metadata

Field	Value
Publication number	US-11204379-B2
Application number	US-201916434333-A
Country	US
Kind code	B2
Filing date	Jun 7, 2019
Priority date	Nov 24, 2010
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures.

First claim

What is claimed:

1. A computer program product, the computer program product comprising a computer readable storage medium having program instructions embodied therewith, the program instructions executable by a computing device to cause the computing device to:
measure first scattering parameters (S-parameters) of a first set of structures comprising a first device under test (DUT) structure;
measure second S-parameters of a second set of structures comprising a second device under test (DUT) structure;
determine a first electrical parameter of a first test device in the first DUT structure and a second electrical parameter of a modified version of the first test device in the second DUT structure based on a difference between results of calculations based on the first S-parameters and results of calculations based on the second S-parameters,
wherein the first test device has a first length, the modified version of the first test device has a second length, and the second length is different than the first length.

2. The computer program product of claim 1 , further comprising program instructions executable by the computing device to determine first admittance parameters (Y-parameters) of the first test device in the first DUT structure and second Y-parameters of the modified version of the first test device in the second DUT structure based on the first and the second S-parameters.

3. The computer program product of claim 1 , further comprising program instructions executable by the computing device to:
determine first admittance parameters (Y-parameters) of the first set of structures based on the first S-parameters;
determine second Y-parameters of the second set of structures based on the second S-parameters; and
determine the first and the second electrical parameters based on the first and the second Y-parameters.

4. The computer program product of claim 2 , further comprising program instructions executable by the computing device to:
determine open-corrected Y-parameters of the first and the second DUT structures and first and second through structures corresponding to the first and second DUT structures based on the first and the second Y-parameters;
determine open-corrected impedance parameters (Z-parameters) of the first and the second through structures based on the open-corrected Y-parameters; and
determine the first and the second electrical parameters based on the open-corrected Y-parameters and the open-corrected Z-parameters.

5. The computer program product of claim 4 , further comprising program instructions executable by the computing device to:
determine a difference between the open-corrected Z-parameters; and
determine the first and the second electrical parameters based on the difference between the open-corrected Z-parameters.

6. The computer program product of claim 4 , further comprising program instructions executable by the computing device to:
determine a difference between admittances to ground in the first and the second through structures based on the open-corrected Z-parameters, wherein non-capacitive impedances to ground of padset parasitics in the first and the second through structures are approximated to a zero value; and
determine the first and the second electrical parameters based on the difference between the admittances to ground.

7. The computer program product of claim 4 , further comprising program instructions executable by the computing device to:
determine a difference between admittances to ground in the first and the second through structures based on the open-corrected Z-parameters, wherein inductance parts of impedances to ground of padset parasitics in the first and the second through structures are approximated to a zero value; and
determine the first and the second electrical parameters based on the difference between the admittances to ground.

8. The computer program product of claim 4 , further comprising program instructions executable by the computing device to:
determine a difference between impedances to ground in the first and the second through structures based on the open-corrected Z-parameters; and
determine the first and the second electrical parameters based on the difference between the impedances to ground.

9. The computer program product of claim 1 , wherein:
the first test device comprises a first capacitor having a first length; and
the modified version of the first test device comprises a second capacitor having a second length different than the first length but otherwise identical to the first capacitor.

10. The computer program product of claim 9 , wherein:
the first capacitor comprises a first vertical natural capacitor (VNCAP); and
the second capacitor comprises a second vertical natural capacitor (VNCAP).

11. The computer program product of claim 10 , wherein:
the first VNCAP has a first width; and
the second VNCAP has a second width equal to the first width.

12. A computer-implemented method, comprising:
measuring, by a computer device, first scattering parameters (S-parameters) of a first set of structures comprising a first device under test (DUT) structure;
measuring, by the computer device, second S-parameters of a second set of structures comprising a second device under test (DUT) structure;
determining, by the computer device, a first electrical parameter of a first test device in the first DUT structure and a second electrical parameter of a modified version of the first test device in the second DUT structure based on a difference between the results of calculations based on the first S-parameters and results of calculations based on the second S-parameters,
wherein the first test device has a first length, the modified version of the first test device has a second length, and the second length is different than the first length.

13. The computer-implemented method of claim 12 , further comprising determining first admittance parameters (Y-parameters) of the first test device in the first DUT structure and second Y-parameters of the modified version of the first test device in the second DUT structure based on the first and the second S-parameters.

14. The computer-implemented method of claim 12 , further comprising:
determining first admittance parameters (Y-parameters) of the first set of structures based on the first S-parameters;
determining second Y-parameters of the second set of structures based on the second S-parameters; and
determining the first and the second electrical parameters based on the first and the second Y-parameters.

15. The computer-implemented method of claim 13 , further comprising:
determining open-corrected Y-parameters of the first and the second DUT structures and first and second through structures corresponding to the first and second DUT structures based on the first and the second Y-parameters;
determining open-corrected impedance parameters (Z-parameters) of the first and the second through structures based on the open-corrected Y-parameters; and
determining the first and the second electrical parameters based on the open-corrected Y-parameters and the open-corrected Z-parameters.

16. A system comprising:
a processor, a computer readable memory, and a computer readable storage medium;
program instructions to measure first scattering parameters (S-parameters) of a first set of structures comprising a first device under test (DUT) structure;
program instructions to measure second S-parameters of a second set of structures comprising a second device under test (DUT) structure;
program instructions to determine a first ele

Assignees

• IBM

Inventors

• Groves Robert A
• Lu Ning
• Putnam Christopher S
• Thompson Eric

Classifications

• H10P74/277

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• G01R27/28 Primary

  Measuring attenuation, gain, phase shift or derived characteristics of electric four pole networks, i.e. two-port networks; Measuring transient response (in line transmission systems H04B3/46) · CPC title

• G01R35/00

  Testing or calibrating of apparatus covered by the other groups of this subclass · CPC title

• G01R23/20

  Measurement of non-linear distortion · CPC title

• H01L22/34

  Electricity · mapped topic