Polishing slurry and method of polishing substrate by using the polishing slurry

Patent metadata

Field	Value
Publication number	US-11203703-B2
Application number	US-201916247730-A
Country	US
Kind code	B2
Filing date	Jan 15, 2019
Priority date	Mar 20, 2018
Publication date	Dec 21, 2021
Grant date	Dec 21, 2021

Abstract

A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.

First claim

What is claimed is:

1. A polishing slurry, comprising:
an abrasive material;
a first oxide polishing promoter that includes a polymer-based oxide polishing promoter;
a second oxide polishing promoter that includes an alkanolamine-based monomolecular material containing a hydroxyl group and an amine group;
a first nitride polishing inhibitor that includes an anionic nitride polishing inhibitor; and
a second nitride polishing inhibitor including polyoxyethylene stearyl amine ether,
wherein an amount of the second oxide polishing promoter is in a range of about 0.01 weight % to about 1.35 weight % based on the total weight of the polishing slurry,
the polymer-based oxide polishing promoter includes poly(3,4-ethylenedioxythiophene), and
the alkanolamine-based monomolecular material containing a hydroxyl group and an amine group includes at least one selected from aminomethyl propanol, heptaminol, isoetharine, methanolamine, diethylethanolamine, and N-methylethanolamine.

2. The polishing slurry as claimed in claim 1 , wherein the first nitride polishing inhibitor includes a carboxyl group-containing anionic material.

3. The polishing slurry as claimed in claim 1 , wherein the first nitride polishing inhibitor includes at least one selected from poly(acrylic acid) (PAA), poly(alkyl methacrylate), acrylamide, methacrylamide, and ethyl-methacrylamide.

4. The polishing slurry as claimed in claim 1 , wherein an amount of the first oxide polishing promoter is in a range of about 0.004 weight % to about 0.03 weight % based on the total weight of the polishing slurry.

5. The polishing slurry as claimed in claim 1 , wherein an amount of the first oxide polishing promoter is in a range of about 0.004 weight % to about 0.02 weight % based on the total weight of the polishing slurry.

6. The polishing slurry as claimed in claim 1 , wherein an amount of the first nitride polishing inhibitor is in a range of about 0.01 weight % to about 0.08 weight % based on the total weight of the polishing slurry.

7. The polishing slurry as claimed in claim 1 , wherein an amount of the second nitride polishing inhibitor is in a range of about 0.002 weight % to about 0.02 weight % based on the total weight of the polishing slurry.

8. The polishing slurry as claimed in claim 1 , wherein the abrasive material includes ceria (CeO 2 ).

9. The polishing slurry as claimed in claim 1 , wherein an amount of the abrasive material is in a range of about 0.1 weight % to about 10 weight % based on the total weight of the polishing slurry.

10. The polishing slurry as claimed in claim 1 , further comprising a dispersing agent that disperses the abrasive material.

11. The polishing slurry as claimed in claim 1 , wherein the polishing slurry has a polishing selectivity ratio of oxides to nitrides in a range of about 30:1 to about 300:1.

12. A method of polishing a substrate, the method comprising:
preparing a substrate on which a nitride film and an oxide film are formed, the oxide film being formed on a surface of the substrate; and
polishing the oxide film on the surface of the substrate by supplying a polishing slurry to the substrate, wherein
the polishing slurry includes:
an abrasive material;
a first oxide polishing promoter that includes a polymer-based oxide polishing promoter;
a second oxide polishing promoter that includes an alkanolamine-based monomolecular material containing a hydroxyl group and an amine group;
a first nitride polishing inhibitor that includes an anionic nitride polishing inhibitor; and
a second nitride polishing inhibitor including polyoxyethylene stearyl amine ether,

an amount of the second oxide polishing promoter is in a range of about 0.01 weight % to about 1.35 weight % based on the total weight of the polishing slurry,
the polymer-based oxide polishing promoter includes poly(3,4-ethylenedioxythiophene), and
the alkanolamine-based monomolecular material containing a hydroxyl group and an amine group includes at least one selected from aminomethyl propanol, heptaminol, isoetharine, methanolamine, diethylethanolamine, and N-methylethanolamine.

13. The method as claimed in claim 12 , wherein preparing the substrate includes:
forming a pattern on the substrate;
forming the nitride film on the pattern; and
forming the oxide film on the nitride film.

14. A polishing slurry, comprising:
an abrasive material, an amount of the abrasive material being in a range of about 0.1 weight % to about 10 weight % based on the total weight of the polishing slurry;
a first oxide polishing promoter that includes a polymer-based oxide polishing promoter, an amount of the first oxide polishing promoter being in a range of about 0.004 weight % to about 0.03 weight % based on the total weight of the polishing slurry;
a second oxide polishing promoter that includes an alkanolamine-based monomolecular material containing a hydroxyl group and an amine group, an amount of the second oxide polishing promoter being in a range of about 0.01 weight % to about 1.35 weight % based on the total weight of the polishing slurry;
a first nitride polishing inhibitor that includes an anionic nitride polishing inhibitor, an amount of the first nitride polishing inhibitor being in a range of about 0.01 weight % to about 0.08 weight % based on the total weight of the polishing slurry; and
a second nitride polishing inhibitor including polyoxyethylene stearyl amine ether, an amount of the second nitride polishing inhibitor being in a range of about 0.002 weight % to about 0.02 weight % based on the total weight of the polishing slurry, wherein
the polymer-based oxide polishing promoter includes poly(3,4-ethylenedioxythiophene),
the alkanolamine-based monomolecular material containing a hydroxyl group and an amine group includes at least one selected from aminomethyl propanol, heptaminol, isoetharine, methanolamine, diethylethanolamine, and N-methylethanolamine, and
the first nitride polishing inhibitor includes a carboxyl group-containing anionic material.

Assignees

• Samsung Display Co Ltd
• Ubmaterials Inc
• Ub Mat Inc

Inventors

• Cho Hyunjin
• Bae Joonhwa
• Choo Byoungkwon
• Cho Woojin
• Park Jinhyung

Classifications

• H10P95/062 Primary

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title