Semiconductor laser

Patent metadata

Field	Value
Publication number	US-11201454-B2
Application number	US-201716091172-A
Country	US
Kind code	B2
Filing date	Apr 7, 2017
Priority date	Apr 8, 2016
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

The invention relates to a semiconductor laser comprising a layer structure comprising an active zone, wherein the active zone is configured to generate an electromagnetic radiation, wherein the layer structure comprises a sequence of layers, wherein two opposite end faces are provided in a Z-direction, wherein at least one end face is configured to at least partly couple out the electromagnetic radiation, and wherein the second end face is configured to at least partly reflect the electromagnetic radiation, wherein guide means are provided for forming an optical mode in a mode space between the end faces, wherein means are provided which hinder a formation of an optical mode outside the mode space, in particular modes comprising a propagation direction which do not extend perpendicularly to the end faces.

First claim

The invention claimed is:

1. A semiconductor laser comprising:
a layer structure comprising an active zone configured to generate an electromagnetic radiation,
wherein the layer structure comprises a sequence of layers,
wherein two opposite end faces are provided in a Z-direction,
wherein at least one first end face is configured to at least partly couple out the electromagnetic radiation,
wherein a second end face is configured to at least partly reflect the electromagnetic radiation,
wherein the layer structure is configured to provide a mode space between the two end faces, the mode space configured to form an optical mode,
wherein the sequence of layers is implemented along a Y-direction,
wherein the active zone is arranged in an X-Z-plane,
wherein the layer structure comprises at least one first side face,
wherein the at least one first side face extends along the Z-direction,
wherein the at least one first side face is inclined within the X-Z-plane at an angle with respect to the Z-direction having a first inclination,
wherein the layer structure with the at least one first side face with the first inclination is configured to hinder a formation of an optical mode outside the mode space,
wherein the at least one first side face is inclined within an Y-X-plane at an angle with respect to the Y-direction having a second inclination, and
wherein the layer structure with the at least one first side face with the second inclination is configured to hinder the formation of the optical mode outside the mode space.

2. The semiconductor layer laser according to claim 1 , wherein the semiconductor laser is configured to hinder the formation of modes with a propagation direction that do not extend perpendicularly to the end faces.

3. The semiconductor laser according to claim 1 , wherein the layer structure comprises at least one second side face, wherein the second side face extends along the Z-direction, wherein the second side face is inclined within the X-Z-plane at an angle with respect to the Z-direction having a third inclination, wherein the second side face is arranged opposite the first side face, and wherein the layer structure with the at least one second side face with the third inclination is configured to hinder the formation of the optical mode outside the mode space.

4. The semiconductor laser according to claim 1 , wherein the first side face comprises at least one antireflective partial region, and wherein the antireflective partial region is configured to transmit more than 50% of the electromagnetic radiation emitted by the active zone.

5. The semiconductor laser according to claim 1 , a deflector is provided at at least one partial region of the first side face, wherein the deflector is configured to bring about a reflection of the electromagnetic radiation that emanates from the mode space and impinges on the first side face in a direction alongside the mode space.

6. The semiconductor laser according to claim 5 , wherein the first side face is arranged in a manner inclined at an angle with respect to a plane of the active zone, and wherein the angle lies a range of between 1° and 89° relative to the plane of the active zone.

7. The semiconductor laser according to claim 5 , wherein the first side face extends along the Y-direction right into a plane of a first waveguide layer, wherein the first side face extends along the Y-direction right into a plane of a second waveguide layer, and wherein the second waveguide layer is arranged below the active zone.

8. The semiconductor laser according to claim 5 , wherein at least one partial region of the first side face comprises a mechanical structure that is configured to reduce or prevent reflection or propagation of the electromagnetic radiation, and wherein the mechanical structure comprises a roughness in form of steps and/or in form of dislocations.

9. The semiconductor laser according to claim 1 , further comprising an absorbing layer outside the mode space, wherein the absorbing layer is configured to damp the electromagnetic radiation.

10. The semiconductor laser according to claim 9 , wherein the layer structure comprises a trench, wherein the trench comprises a predefined depth in the Y-direction, a predefined width in an X-direction and a predefined length in the Z-direction, wherein the trench extends at least over part of a length of the semiconductor laser in the Z-direction, wherein the trench is at least partly provided with the absorbing layer, and wherein the absorbing layer is configured to at least partly absorb the electromagnetic radiation.

11. The semiconductor laser according to claim 9 , wherein the absorbing layer comprises a metal and/or a semiconductor material.

12. The semiconductor laser according to claim 9 , wherein the absorbing layer comprises a compound semiconductor and/or a dielectric material and/or hydrocarbons.

13. A semiconductor laser comprising:
a layer structure comprising an active zone configured to generate an electromagnetic radiation,
wherein the layer structure comprises a sequence of layers,
wherein two opposite end faces are provided in a Z-direction,
wherein at least one end face is configured to at least partly couple out the electromagnetic radiation,
wherein a second end face is configured to at least partly reflect the electromagnetic radiation,
wherein the layer structure is configured to provide a mode space between the two end faces, the mode space configured to form an optical mode,
wherein the layer structure is configured to hinder a formation of an optical mode outside the mode space; and
an absorbing layer outside the mode space,
wherein the absorbing layer is configured to damp the electromagnetic radiation,
wherein the absorbing layer comprises at least an absorbing partial region of at least one layer of the layer structure,
wherein the absorbing partial region of the layer is formed vis-à-vis another region of the layer such that the partial region is configured to absorb or scatter the electromagnetic radiation better than the other region of the layer, and
wherein the absorbing layer is arranged outside the active zone.

14. The semiconductor laser according to claim 13 , wherein at least the absorbing partial region comprises impurity atoms and/or an increased concentration of dopants and/or a changed composition of a semiconductor material, and/or wherein the absorbing layer comprises quantum films, wherein the quantum films comprise a smaller band gap in the absorbing partial region than in the other region, wherein the smaller band gap is produced in particular by a larger thickness of the quantum film and/or by a different composition, such that the electromagnetic radiation is absorbed better than in other regions of the active zone.

15. A semiconductor laser comprising:
a layer structure comprising an active zone configured to generate an electromagnetic radiation,
wherein the layer structure comprises a sequence of layers,
wherein two opposite end faces are provided in a Z direction,
wherein at least one first end face is configured to at least partly couple out the electromagnetic radiation,
wherein a second end face is configured to at least partly reflect the electromagnetic radiation,
wherein the layer structure is configured to provide a mode space between the two end faces, the mode space configured to form an optical mode, and
wherein the semiconductor laser or the layer structure is configured to hinder a formation of the optical mode outside the mode space; and
an absorbing layer outside the mode space,
wherein the absorbing layer i

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Oled Gmbh

Inventors

• Vierheilig Clemens
• Lell Alfred
• Gerhard Sven
• Loeffler Andreas

Classifications

• H01S5/0421

  characterised by the semiconducting contacting layers (electrodes H01S5/0425) · CPC title

• H01S2301/17

  Semiconductor lasers comprising special layers · CPC title

• H01S5/0218

  Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer · CPC title

• H01S5/34333

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title

• H01S5/04252

  characterised by the material · CPC title