Composition for forming silica layer, silica layer and electronic device incorporating silica layer

Patent metadata

Field	Value
Publication number	US-11201052-B2
Application number	US-202016874820-A
Country	US
Kind code	B2
Filing date	May 15, 2020
Priority date	May 17, 2019
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1 H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl 3 , when a peak derived from N 3 SiH 1 and N 2 SiH 2 is referred to as Peak 1 and a peak derived from NSiH 3 is referred to as Peak 2, a ratio (P 1 /(P 1 +P 2 )) of an area (P 1 ) of Peak 1 relative to a total area (P 1 +P 2 ) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P A /P B ) of an area (P A ) of Region A relative to an area (P B ) of Region B is greater than or equal to about 1.5.

First claim

What is claimed is:

1. A composition for forming a silica layer, the composition comprising perhydropolysilazane (PHPS) and a solvent,
wherein in a 1 H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl 3 , when a peak derived from N 3 SiH 1 and N 2 SiH 2 is referred to as Peak 1 and a peak derived from NSiH 3 is referred to as Peak 2, a ratio (P 1 /(P 1 +P 2 )) of an area (P 1 ) of Peak 1 relative to a total area (P 1 +P 2 ) of Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B of the area (P 1 ) of Peak 1 and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area (P 1 ) of Peak 1, a ratio (P A /P B ) of an area (P A ) of Region A relative to an area (P B ) of Region B is greater than or equal to 1.5.

2. The composition of claim 1 , wherein the ratio (P 1 /(P 1 +P 2 )) of the area of Peak 1 relative to the total area of Peak 1 and Peak 2 in the 1 H-NMR spectrum of the perhydropolysilazane (PHPS) is 0.77 to 0.82.

3. The composition of claim 1 , wherein the ratio (P A /P B ) of the area (P A ) of Region A relative to the area (P B ) of Region B is 1.5 to 2.0.

4. The composition of claim 1 , wherein the perhydropolysilazane (PHPS) has a weight average molecular weight of 3,000 g/mol to 30,000 g/mol.

5. The composition of claim 1 , wherein the perhydropolysilazane (PHPS) has a weight average molecular weight of 5,000 g/mol to 15,000 g/mol.

6. The composition of claim 1 , wherein the perhydropolysilazane (PHPS) is included in an amount of 0.1 wt % to 30 wt % based on a total amount of the composition for forming the silica layer.

7. The composition of claim 1 , wherein the solvent comprises benzene, toluene, xylene, ethylbenzene, diethylbenzene, trimethylbenzene, triethylbenzene, cyclohexane, cyclohexene, decahydro naphthalene, dipentene, pentane, hexane, heptane, octane, nonane, decane, ethylcyclohexane, methylcyclohexane, p-menthane, dipropylether, dibutylether, anisole, butyl acetate, amyl acetate, methylisobutylketone, or a combination thereof.

8. A silica layer manufactured from the composition for forming the silica layer of claim 1 .

9. An electronic device comprising the silica layer of claim 8 .

10. A method of manufacturing a silica layer, the method comprising a step of coating the composition for forming the silica layer of claim 1 on a substrate.

11. The method of claim 10 , wherein the step of coating comprises spin-on coating the composition, slit coating the composition, or inkjet printing the composition.

12. A method of manufacturing an electronic device, the method comprising forming a silica layer between a transistor device and a bit line or between a transistor device and a capacitor, the silica layer formed by a step of coating the composition for forming the silica layer of claim 1 .

13. The method of claim 12 , wherein the step of coating comprises spin-on coating the composition, slit coating the composition, or inkjet printing the composition.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Jang Seungwoo
• Kwak Taeksoo
• Bae Jin-Hee
• Jo Hyeonsu
• Kim Euihyun
• Noh Kunbae
• Sakong Jun
• Lee Chungheon
• Lim Wanhee
• Hwang Byeonggyu

Classifications

• H10P14/6346

  using printing, e.g. ink-jet printing · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• C08L2203/20

  use in electrical or conductive gadgets · CPC title