Gas electron multiplier board photomultiplier

Patent metadata

Field	Value
Publication number	US-11201041-B2
Application number	US-202117158668-A
Country	US
Kind code	B2
Filing date	Jan 26, 2021
Priority date	Feb 3, 2020
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

A photomultiplier includes a housing including a proximal end and a distal end, an optical window disposed at the proximal end of the housing, an end-wall plate disposed at the distal end of the housing, a feedthrough that penetrates through the end-wall plate, and a gas electron multiplier (GEM) board disposed between the optical window and the end-wall plate.

First claim

The invention claimed is:

1. A device comprising:
a housing including a proximal end and a distal end;
an optical window disposed at the proximal end of the housing;
an end-wall plate disposed at the distal end of the housing;
a feedthrough that penetrates through the end-wall plate; and
a gas electron multiplier (GEM) board disposed between the optical window and the end-wall plate.

2. The device of claim 1 , further comprising a photocathode coated as a thin film on a surface of the optical window.

3. The device of claim 2 , wherein the photocathode includes potassium sodium antimonide.

4. The device of claim 1 , wherein the feedthrough includes:
an electrically conductive wire that penetrates through the end-wall plate; and
a hermetic seal between the electrically conductive wire and the end-wall plate.

5. The device of claim 1 , wherein the optical windows includes sapphire.

6. The device of claim 1 , wherein the housing includes titanium or aluminum.

7. The device of claim 1 , further comprising a gas mix, wherein the gas mix includes a proportional gas.

8. The device of claim 7 , wherein the proportional gas includes one of Group 18 of the periodic table or nitrogen.

9. The device of claim 8 , wherein the proportional gas is nitrogen.

10. The device of claim 7 , wherein the gas mix further includes a quench gas.

11. The device of claim 10 , wherein the quench gas includes one of CO 2 , CH 4 , or CF 4 .

12. The device of claim 2 , wherein the photocathode includes at least one layer of vapor deposited material.

13. The device of claim 12 , wherein a thickness of one or more of the at least one layer of vapor deposited material is less than or equal to 200 nanometers.

14. The device of claim 12 , wherein each of the at least one layer of vapor deposited material includes a minimum of 90 weight-% of one or more material selected from the group consisting of: Antimony (Sb), Antimony, compound with potassium (1:1) (KSb), Antimony, compound with potassium (2:1) (KSb 2 ), Antimony, compound with potassium (5:4) (K 5 Sb 4 ), Antimony Trioxide (Sb 2 O 3 ), Cesium (Cs), Cesium Antimonide (Cs 3 Sb), Gallium Arsenide (GaAs), Gallium Arsenide with Cesium (GaAs(Cs)), Cesium Bismuthide (Cs 3 Bi), Cesium Bismuthide with Oxygen (Cs 3 Bi(O)), Cesium Bismuthide with Silver (Cs 3 Bi(Ag)), Cesium Iodide (CsI), Cesium Oxide (Cs 2 O), Cesium Telluride (Cs 2 Te), Gallium Aluminum Arsenide (Ga 0.25 Al 0.75 As), Gallium Arsenide Phosphide (GaAs 1-x P x ), Gallium Arsenide Phosphide with Cesium (GaAs 1-x P x (Cs)), Gallium Nitride (GaN), Gallium Nitride with Cesium (GaN(Cs)), Gallium Phosphide (GaP), Indium Gallium Arsenide (InGaAs), Indium Gallium Arsenide with Cesium (InGaAs(Cs)), Indium Gallium Arsenide Phosphide (InGaAsP), Indium Gallium Arsenide Phosphide with Cesium (InGaAsP(Cs)), Indium Phosphide (InP), Lithium Antimonide (Li 3 Sb), Oxygen (O), Potassium (K), Potassium Antimonide (K 3 Sb), Potassium Bromide (KBr), Potassium Cesium Antimonide (K 2 CsSb), Potassium Chloride (KCl), Potassium Oxide (K 2 O), Potassium Sodium Cesium Antimonide ((Cs)Na 2 KSb), Sodium (Na), Sodium Antimonide (Na 3 Sb), Sodium Arsenide (Na 3 As), Sodium Cesium Antimonide (Na 2 CsSb), Sodium Oxide (Na 2 O), Sodium Potassium Antimonide (Na 2 KSb), Rubidium Cesium Antimonide (Rb 2 CsSb), Silver (Ag), Silver Bismuth Oxygen Cesium (Ag—Bi—O—Cs), Silicon-Carbide (SiC), and Silver Oxygen Cesium (Ag—O—Cs).

15. The device of claim 12 , wherein each of the at least one layer of vapor deposited material includes a minimum of 90 weight-% of one or more material selected from the group consisting of: Aluminum (Al), Antimony (Sb), Arsenic (As), Bismuth (Bi), Bromine (Br), Cesium (Cs), Chlorine (Cl), Gallium (Ga), Indium (In), Lithium (Li), Oxygen (O), Phosphorous (P), Potassium (K), Rubidium (Rb), Silver (Ag), Sodium (Na), and Tellurium (Te).

16. The device of claim 12 , wherein each of the at least one layer of vapor deposited material includes a minimum of 90 weight-% of one or more material selected from the group consisting of: Silicon (Si), Boron Nitride (BN), Titanium Dioxide (TiO 2 ), Silicon Carbide (SiC), and Silicon Dioxide (SiO 2 ).

17. The device of claim 2 , wherein an electric potential difference is applied between the photocathode and the GEM board.

18. The device of claim 1 , further comprising a readout anode.

19. The device of claim 1 , further comprising a focusing element including conducting cylinders or rings.

20. The device of claim 1 , wherein the housing is cylindrical.

Assignees

• Baker Hughes Holdings Llc

Inventors

• Mckinny Kevin Scott
• Hale Casey
• Freeman Christopher
• Burke Jonas
• Steinhart Matthew
• Mcpheeters Matthew

Classifications

• H01J43/08 Primary

  Cathode arrangements (construction of photo cathodes H01J40/06, H01J40/16, H01J47/00, H01J49/08) · CPC title

• H01J43/28

  Vessels {, e.g. wall of the tube}; Windows; Screens; Suppressing undesired discharges or currents · CPC title

• H01J47/02 Primary

  Ionisation chambers · CPC title

• H01J43/22

  Dynodes consisting of electron-permeable material, e.g. foil, grid, tube, venetian blind · CPC title

• H01J1/34

  Photo-emissive cathodes (H01J1/35 takes precedence) · CPC title