Multilayer type electronic component

Patent metadata

Field	Value
Publication number	US-11201015-B2
Application number	US-202016916804-A
Country	US
Kind code	B2
Filing date	Jun 30, 2020
Priority date	Jul 19, 2019
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

A multilayer electronic component having a plurality of laminated dielectric layers and inner electrode layers. The dielectric layers have a plurality of crystal grains including first regions where Re is dissolved in a solid state; and second regions where Re is not dissolved in the solid state. A median size of the crystal grains to an average thickness of the dielectric layers is 0.5≤t≤0.7. A ratio of a sum of cross sectional areas of the first regions to those of the plurality of crystal grains is 0.7≤s≤0.9. When a total amount of Ti, Zr, and Hf is 100 molar parts in the dielectric layers, a sum of the Zr and the Hf is 0≤a≤1.0; an amount b of Si is 0.1≤b≤1.0; an amount c of Re is 0.5≤c≤10.0; and a ratio m of a total of Ba and Re to a total of Ti, Zr, and Hf is 0.990≤m≤1.050.

First claim

What is claimed is:

1. A multilayer electronic component comprising:
a multilayer body including a plurality of laminated dielectric layers and a plurality of inner electrode layers alternately arranged between adjacent dielectric layers of the plurality of laminated dielectric layers, wherein
each of the plurality of laminated dielectric layers includes elements Ba, Ti, Zr, Hf, Si, and Re, and Re is at least one element selected from Gd, Dy, Ho, Er, and Y,
an average thickness of each of the plurality of laminated dielectric layers is less than or equal to 0.5 μm,
each of the plurality of laminated dielectric layer has a plurality of crystal grains with first regions and second regions, each of the first regions having the Re dissolved in a solid state, and each of the second regions not having the Re dissolved in the solid state,
a ratio t of a median size of the plurality of crystal grains to the average thickness of the dielectric layer is 0.5≤t≤0.7,
in a cross section along a thickness direction of the plurality of laminated dielectric layers, a ratio s of a sum of cross sectional areas of the first regions to a sum of cross sectional areas of the plurality of crystal grains is 0.7≤s≤0.9,
where each of amounts of the elements included in the dielectric layer is expressed in molar parts, when a total of an amount of the Ti, an amount of the Zr, and an amount of the Hf is set to be 100,
a sum a of the amount of Zr and the amount of Hf is 0≤a≤1.0,
an amount b of the Si is 0.1≤b≤1.0,
an amount c of the Re is 0.5≤c≤10.0, and
a ratio m of a total of an amount of the Ba and the amount of the Re to the total of the amount of the Ti, the amount of the Zr, and the amount of the Hf is 0.990≤m≤1.050.

2. The multilayer electronic component according to claim 1 , wherein a coefficient of variation of a variation in the thickness of the dielectric layer is less than or equal to 15%.

3. The multilayer electronic component according to claim 1 , wherein the second region is surrounded by the first region.

4. The multilayer electronic component according to claim 1 , wherein the amount b of Si is 0.1≤b≤0.5.

5. The multilayer electronic component according to claim 1 , wherein each of the plurality of crystal grains includes a perovskite compound having Ba(Ti,Zr,Hf)O 3 as a basic structure thereof.

6. The multilayer electronic component according to claim 1 , wherein the Si exists at a grain boundary between the plurality of crystal grains.

7. The multilayer electronic component according to claim 6 , wherein the Si is partially dissolved in the plurality of crystal grains in a solid state.

8. The multilayer electronic component according to claim 1 , further comprising:
a first outer electrode on a first end surface of the multilayer body and electrically connected to a first set of inner electrode layers of the plurality of inner electrode layers; and
a second outer electrode on a second end surface of the multilayer body and electrically connected to a second set of inner electrode layers of the plurality of inner electrode layers.

Assignees

• Murata Manufacturing Co

Inventors

• Sasabayashi Takehisa
• Gomi Kenjiro
• Kimura Kenji
• Oshima Wataru

Classifications

• H01G4/30 Primary

  Stacked capacitors (H01G4/33 takes precedence) · CPC title

• C04B2235/85

  Intergranular or grain boundary phases · CPC title

• C04B2235/95

  Products characterised by their size, e.g. microceramics · CPC title

• C04B35/62823

  Zirconium or hafnium oxide · CPC title

• C04B2235/3225

  Yttrium oxide or oxide-forming salts thereof · CPC title