Resist underlayer film-forming composition containing naphthol aralkyl resin

Patent metadata

Field	Value
Publication number	US-11199775-B2
Application number	US-201716094609-A
Country	US
Kind code	B2
Filing date	Apr 17, 2017
Priority date	Apr 18, 2016
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

A resist underlayer film not undergoing intermixing with a resist layer, having high dry etching and heat resistance, exhibiting high temperature low mass loss, and exhibiting even stepped substrate coatability, includes a polymer containing a unit structure of the formula (1):

The unit structure of formula (1) is a unit structure of the formula (2):

A method for producing a semiconductor device, includes forming, on a semiconductor substrate, a resist underlayer film using a resist underlayer film-forming composition, forming a hard mask on the resist underlayer film, a resist film on the hard mask, a resist pattern by irradiation with light or an electron beam and development of the resist film, a pattern by etching the hard mask using the resist pattern, a pattern by etching the underlayer film using the patterned hard mask, and processing the substrate using the patterned resist underlayer film.

First claim

The invention claimed is:

1. A resist underlayer film, comprising a polymer containing a unit structure of the following formula (1):

wherein n1 is the number of repetitions of the unit structure and is an integer of 1 to 10, and n2 is an integer of 1 or 2, and
wherein the resist underlayer film has a 5% mass loss temperature of 220 to 410° C., and has a film thickness difference between a stepped portion and a portion having no step of 60 to 330 nm when coated onto a stepped substrate having a step height of 400 nm and a line-and-space of 120 nm/120 nm.

2. The resist underlayer film according to claim 1 , wherein the unit structure of formula (1) is a unit structure of the following formula (2):

wherein n1 is the number of repetitions of the unit structure and is an integer of 1 to 10.

3. The resist underlayer film according to claim 1 , further comprising a crosslinking agent.

4. The resist underlayer film according to claim 1 , further comprising an acid and/or an acid generator.

5. A method for producing the resist underlayer film according to claim 1 , comprising coating a semiconductor substrate with a resist underlayer film-forming composition, and baking to form the resist underlayer film.

6. A method for producing a semiconductor device, comprising a step of forming, on a semiconductor substrate, the resist underlayer film according to claim 1 comprising a resist underlayer film-forming composition, a step of forming a resist film on the resist underlayer film, a step of forming a resist pattern by irradiation with light or an electron beam and development of the resist film, a step of etching the resist underlayer film using the resist pattern, and a step of processing the semiconductor substrate using the patterned resist underlayer film.

7. A method for producing a semiconductor device, comprising a step of forming, on a semiconductor substrate, the resist underlayer film according to claim 1 comprising a resist underlayer film-forming composition, a step of forming a hard mask on the resist underlayer film, a step of forming a resist film on the hard mask, a step of forming a resist pattern by irradiation with light or an electron beam and development of the resist film, a step of etching the hard mask using the resist pattern, a step of etching the resist underlayer film using the patterned hard mask, and a step of processing the semiconductor substrate using the patterned resist underlayer film.

8. The production method according to claim 6 , wherein the processing of the semiconductor substrate is etching of the semiconductor substrate or ion implantation into the semiconductor substrate.

9. The production method according to claim 6 , wherein the processing of the semiconductor substrate is ion implantation of a component containing boron, arsenic, phosphorus or a combination thereof into the semiconductor substrate.

10. The resist underlayer film according to claim 1 , wherein the polymer consists of the unit structure of the formula (1).

Assignees

• Nissan Chemical Corp

Inventors

• Karasawa Ryo
• Hashimoto Keisuke

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P30/22

  using masks · CPC title