Integrated electro-optical device

Patent metadata

Field	Value
Publication number	US-11199731-B2
Application number	US-202017064385-A
Country	US
Kind code	B2
Filing date	Oct 6, 2020
Priority date	May 3, 2018
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

A device, includes: a ring waveguide; a diode comprising a junction extending at least partly in the ring waveguide; and a first circuit configured to supply a signal representative of a leakage current in the diode.

First claim

What is claimed is:

1. A method, comprising:
generating a signal representative of a leakage current in a diode;
determining a maximum value of the leakage current from the signal representative of the leakage current in the diode;
determining a value of a resonance wavelength of a ring waveguide based on the maximum value of the leakage current, the diode comprising a junction extending at least partly in the ring waveguide; and
calculating a difference between the determined value of the resonance wavelength of the ring waveguide and a resonance wavelength target value and, based thereon, modifying a temperature of the ring waveguide.

2. The method of claim 1 , wherein the junction of the diode and the ring waveguide are concentric.

3. The method of claim 1 , wherein the diode is a PN-type diode.

4. The method of claim 1 , wherein the diode is a PiN-type diode having a junction corresponding to an intrinsic region of the diode.

5. The method of claim 1 , wherein the junction of the diode fully extends into the ring waveguide.

6. The method of claim 1 , further comprising controlling a temperature setting of a heating element in accordance with the signal representative of the leakage current, the heating element coupled to the ring waveguide.

7. The method of claim 6 , wherein modifying the temperature of the ring waveguide comprises supplying, to the heating element, a control signal determined by the calculated difference.

8. The method of claim 1 , further comprising having at least another waveguide optically coupled to the ring waveguide.

9. The method of claim 1 , wherein a width of the ring waveguide is in a range from 200 nm to 500 nm.

10. The method of claim 1 , further comprising having an insulating layer, wherein the ring waveguide rests on top of and is in contact with the insulating layer.

11. The method of claim 10 , wherein a height of the ring waveguide from the insulating layer is in a range from 200 to 500 nm.

12. The method of claim 1 , further comprising transmitting, by the ring waveguide, signals having wavelengths in a range from approximately 1 μm to approximately 2 μm.

13. The method of claim 1 , wherein the signal representative of the leakage current in the diode takes a plurality of values, each of which is representative of the leakage current in the diode for a given wavelength of the signal supplied to an input of the ring waveguide.

14. A method, comprising:
measuring a leakage current of a diode at an output of a transimpedance amplifier, the diode coupled to an input of the transimpedance amplifier, the diode comprising a junction extending at least partly in a ring waveguide;
determining, in response to varying a bias voltage of the diode, a value of a resonance wavelength of the ring waveguide corresponding to a maximum value of the leakage current of the diode at the output of the transimpedance amplifier; and
calculating a difference between the determined value of the resonance wavelength of the ring waveguide and a resonance wavelength target value and, based thereon, modifying a temperature of the ring waveguide.

15. The method of claim 14 , further comprising providing a control signal to a heating element coupled to the ring waveguide in accordance with the calculated difference.

16. The method of claim 14 , wherein the diode is reverse-biased.

17. A method, comprising:
reverse biasing a diode comprising a junction extending at least partly in a ring waveguide; and
measuring, for a plurality of wavelengths of an optical signal propagating in the ring waveguide, a leakage current in the diode.

18. The method of claim 17 , further comprising determining a first value of a resonance wavelength by locating a maximum value of the leakage current.

19. The method of claim 18 , further comprising determining, for the reverse biasing of the diode, a difference between the first value of the resonance wavelength and a second targeted value of the resonance wavelength.

20. The method of claim 19 , further comprising heating the ring waveguide to a temperature determined by the difference.

Assignees

• St Microelectronics Crolles 2 Sas
• Commissariat Energie Atomique

Inventors

• Le Maitre Patrick
• Michit Nicolas
• Carpentier Jean-Francois
• Charbonnier Benoit

Classifications

• H10F30/223

  the potential barrier being a PIN barrier · CPC title

• H10F30/221

  the potential barrier being a PN homojunction · CPC title

• H10F77/147

  Shapes of bodies · CPC title

• G02F2203/21

  Thermal instability, i.e. DC drift, of an optical modulator; Arrangements or methods for the reduction thereof · CPC title

• G02F1/3133

  the optical waveguides being made of semiconducting materials · CPC title