Melt-growth of single-crystal alloy semiconductor structures and semiconductor assemblies incorporating such structures

Patent metadata

Field	Value
Publication number	US-11198951-B2
Application number	US-201515316555-A
Country	US
Kind code	B2
Filing date	Jun 5, 2015
Priority date	Jun 6, 2014
Publication date	Dec 14, 2021
Grant date	Dec 14, 2021

Abstract

A method of fabricating at least one single-crystal alloy semiconductor structure. At least one seed, containing an alloying material, on a substrate for growth of at least one single-crystal alloy semiconductor structure is formed. At least one structural form, formed of a host material, on the substrate is crystallized to form the at least one single-crystal alloy semiconductor structure. The at least one structural form is heated such that the material of the at least one structural form has a liquid state. Also, the at least one structural form is cooled, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in a main body of the respective structural form away from the respective seed.

First claim

The invention claimed is:

1. A method of fabricating at least one single-crystal alloy semiconductor structure, comprising:
forming at least one seed on a substrate for growth of at least one single-crystal alloy semiconductor structure, the at least one seed containing an alloying material;
providing at least one structural form on the substrate which is crystallized to form the at least one single-crystal alloy semiconductor structure, the at least one structural form being formed of a host material and comprising a main body which comprises an elongate element which extends from the at least one seed and a plurality of branch or radiating elements which extend outwardly from the main body and are connected in spaced relation to and along the main body;
heating the at least one structural form such that the host material of the at least one structural form has a liquid state; and
cooling the at least one structural form, such that the host material of the at least one structural form nucleates at the at least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in a direction along a length of the elongate element of the main body of the respective at least one structural form away from the respective at least one seed;
wherein the plurality of elements of the at least one structural form provide reservoirs of the alloying material in liquid state, such that successive ones of the plurality of elements as spaced along the main body act to maintain, in liquid state, an available supply of the alloying material to the growth front of the single crystal in the main body of the respective at least one structural form.

2. The method of claim 1 , wherein the substrate comprises a substrate body and an insulating layer which is formed over the substrate body and includes at least one aperture, with the substrate body at the at least one aperture providing the at least one seed.

3. The method of claim 1 , wherein the substrate comprises a substrate body and an insulating layer which is formed over the substrate body, and the at least one seed is formed on the insulating layer.

4. The method of claim 1 , wherein the substrate comprises a substrate body which is formed of an insulating material, and the at least one seed is formed on the substrate body.

5. A semiconductor assembly incorporating the at least one single-crystal semiconductor structure fabricated using the method of claim 1 .

6. A semiconductor pre-form from which at least one single-crystal semiconductor structure is fabricated, the semiconductor pre-form comprising:
a substrate;
at least one seed on the substrate for growth of at least one single-crystal alloy semiconductor structure, the at least one seed containing an alloying material;
at least one structural form on the substrate which, when crystallized, forms the at least one single-crystal alloy semiconductor structure, the at least one structural form being formed of a host material and comprising a main body which comprises an elongate element which extends from the at least one seed and a plurality of branch or radiating elements which extend outwardly from the main body and are connected in spaced relation to the main body;
wherein the plurality of elements of the at least one structural form provide reservoirs of the alloying material in liquid state when heated to a temperature above the melting point of the material of the at least one structural form, such that successive ones of the plurality of elements as spaced along the main body act to maintain during fabrication, in liquid state, an available supply of the alloying material to a growth front of a single crystal in the main body of the respective at least one structural form; and
wherein when the at least one structural form is cooled such that the host material of the at least one structural form nucleates at the at least one seed and crystallizes as the single crystal to provide at least one single-crystal alloy semiconductor structure, the growth front propagates in a direction along a length of the elongate element of the main body of the respective at least one structural form away from the respective at least one seed.

7. The semiconductor pre-form of claim 6 , wherein the substrate comprises a substrate body and an insulating layer which is formed over the substrate body and includes at least one aperture, with the substrate body at the at least one aperture providing the at least one seed.

8. The semiconductor pre-form of claim 6 , wherein the substrate comprises a substrate body and an insulating layer which is formed over the substrate body, and the at least one seed is formed on the substrate body.

9. The semiconductor pre-form of claim 6 , wherein the substrate comprises a substrate body which is formed of an insulating material, and the at least one seed is formed on the substrate body.

10. A semiconductor assembly incorporating at least one single-crystal semiconductor structure fabricated using the semi-conductor pre-form of claim 6 .

11. A semiconductor assembly, comprising:
a substrate; and
at least one single-crystal semiconductor structure on the substrate, the at least one semiconductor structure being formed of an alloy of a host material and an alloying material and comprising a main body which comprises an elongate element which extends from at least one seed on the substrate and extends from and a plurality of branch or radiating elements which extend outwardly from the main body and are connected in spaced relation to and along the main body;
wherein the at least one single-crystal semiconductor structure is fabricated by cooling at least one structural form such that the host material nucleates at the at least one seed and crystallizes as a single crystal to provide the at least one single-crystal alloy semiconductor structure, and wherein when the at least one structural form is cooled a growth front propagates in a direction along a length of the elongate element of the respective main body away from the respective at least one seed.

12. The semiconductor assembly of claim 11 , wherein the substrate comprises a substrate body and an insulating layer which is formed over the substrate body and includes at least one aperture, with the at least one semiconductor structure extending from the at least one aperture.

13. The semiconductor assembly of claim 11 , wherein the substrate comprises a substrate body and an insulating layer which is formed over the substrate body, and further comprising:
at least one deposit which is formed on the substrate body from which extends the at least one semiconductor structure.

14. The semiconductor assembly of claim 11 , wherein the substrate comprises a substrate body which is formed of an insulating material, and further comprising:
at least one deposit which is formed on the substrate body from which extends the at least one semiconductor structure.

Assignees

• Univ Southampton

Inventors

• Gardes Frederic Yannick
• Reed Graham Trevor
• Littlejohns Callum George

Classifications

• H10P14/3808

  using laser beams · CPC title

• H10P14/263

  using melted materials · CPC title

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3451

  Structure · CPC title

• H10P14/3421

  Arsenides · CPC title