Device and device protection system

US11196392B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11196392-B2
Application numberUS-202016834049-A
CountryUS
Kind codeB2
Filing dateMar 30, 2020
Priority dateMar 30, 2020
Publication dateDec 7, 2021
Grant dateDec 7, 2021

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A device having device function circuitry configured to receive a device signal and output a modified device signal is disclosed. The device includes a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry. The device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal.

First claim

Opening claim text (preview).

What is claimed is: 1. A device comprising: device function circuitry configured to receive a device signal and output a modified device signal; and a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry, wherein the device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal. 2. The device of claim 1 wherein the device function circuitry is configured to receive the control signal from device protection circuitry that is located external of the device. 3. The device of claim 2 wherein the device is configured to transmit the device temperature signal to the device protection circuitry. 4. The device of claim 2 wherein the device is configured to receive a device temperature sensor bias signal from the device protection circuitry. 5. The device of claim 4 wherein the device temperature sensor bias signal provides the device temperature sensor with a first sensor bias voltage that is within ±1% of a second sensor bias voltage provided to a reference temperature sensor comprising the device protection circuitry. 6. The device of claim 4 wherein the device temperature sensor bias signal provides the device temperature sensor with a first sensor bias current that is within ±1% of a second sensor bias current provided to a reference temperature sensor comprising the device protection circuitry. 7. The device of claim 1 wherein the device function circuitry is a radio frequency transistor comprising: a plurality of transistor layers; and a plurality of transistor fingers disposed over the plurality of transistor layers, wherein at least one of the plurality of transistor fingers is a sensor finger comprising the device temperature sensor. 8. The device of claim 7 wherein one transistor finger of the plurality of transistor fingers is separated from and longitudinally aligned with the sensor finger. 9. The device of claim 8 wherein the one transistor finger of the plurality of transistor fingers that is longitudinally aligned with the sensor finger is an emitter finger. 10. The device of claim 1 wherein the device function circuitry is a thyristor and the device signal is an alternating current power signal and the control signal is a thyristor trigger signal that is not received when the device temperature signal indicates that the thyristor is dissipating power outside the predetermined power dissipation range. 11. A device protection system comprising: device function circuitry configured to receive a device signal and output a modified device signal; and a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry, wherein the device function circuitry is further configured to maintain power dissipation of the device function circuitry to below a predetermined safe power dissipation level in response to a control signal that is generated based upon the device temperature signal; device protection circuitry comprising: a reference temperature sensor configured to generate a reference temperature signal that is different in magnitude from the device temperature signal as the power dissipation of device function circuitry exceeds the predetermined safe power dissipation level; a difference amplifier configured to amplify a difference between the device temperature signal and reference temperature signal to generate an error signal; and a device controller configured to generate the control signal received by the device function circuitry based upon the magnitude of the error signal. 12. The device protection system of claim 11 wherein the device controller is further configured to generate a device sensor bias signal that biases the device temperature sensor and a reference sensor bias signal that biases the reference temperature sensor. 13. The device protection system of claim 12 wherein the device sensor bias signal provides the device temperature sensor with a first sensor bias voltage that is within ±1% of a second sensor bias voltage provided to the reference temperature sensor. 14. The device protection system of claim 12 wherein the device temperature sensor bias signal provides the device temperature sensor with a first sensor bias current that is within ±1% of a second sensor bias current provided to a reference temperature sensor comprising the device protection circuitry. 15. The device protection system of claim 11 wherein the device function circuitry is a transistor comprising: a plurality of transistor layers; and a plurality of transistor fingers disposed over the plurality of transistor layers, wherein at least one of the plurality of transistor fingers is a sensor finger comprising the device temperature sensor. 16. The device protection system of claim 15 wherein one transistor finger of the plurality of transistor fingers is separated from and longitudinally aligned with the sensor finger. 17. The device protection system of claim 16 wherein the one transistor finger of the plurality of transistor fingers that is longitudinally aligned with the sensor finger is an emitter finger. 18. The device protection system of claim 11 wherein the device function circuitry is a thyristor, the device signal is an alternating current power signal, and the control signal is a thyristor trigger signal that is not received when the device temperature signal indicates that the thyristor is dissipating power outside the predetermined power dissipation range. 19. Device protection circuitry comprising: a reference temperature sensor configured to generate a reference temperature signal that is different in magnitude from a device temperature signal generated by a device temperature sensor as power dissipation of a device exceeds a predetermined safe power dissipation level; a difference amplifier configured to amplify a difference between the device temperature signal and the reference temperature signal to generate an error signal; and a device controller configured to generate a control signal in response to the error signal, wherein the control signal is received by device function circuitry that is configured to both modify a device signal and maintain the power dissipation of the device to below the predetermined safe power dissipation level in response to the control signal. 20. The device protection circuitry of claim 19 wherein the device controller is further configured to generate a device sensor bias signal that biases the device temperature sensor and a reference sensor bias signal that biases the reference temperature sensor.

Assignees

Inventors

Classifications

  • Paralleled transistors are used as sensors · CPC title

  • A voltage generating circuit being realised for biasing different circuit elements · CPC title

  • the amplifier being a radio frequency amplifier · CPC title

  • the amplifier being protected to temperature influence · CPC title

  • the temperature being sensed · CPC title

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Frequently asked questions

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What does patent US11196392B2 cover?
A device having device function circuitry configured to receive a device signal and output a modified device signal is disclosed. The device includes a device temperature sensor configured to generate a device temperature signal that is proportional to a temperature of the device function circuitry. The device function circuitry is further configured to maintain power dissipation of the device …
Who is the assignee on this patent?
Qorvo Us Inc
What technology area does this patent fall under?
Primary CPC classification H03F1/302. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 07 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).