Laser processing method and laser processing system

Patent metadata

Field	Value
Publication number	US-11194255-B2
Application number	US-202016812784-A
Country	US
Kind code	B2
Filing date	Mar 9, 2020
Priority date	Oct 4, 2017
Publication date	Dec 7, 2021
Grant date	Dec 7, 2021

Abstract

A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the transfer position.

First claim

What is claimed is:

1. A laser processing method that performs laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system including a laser apparatus configured to output a pulse laser beam that is the ultraviolet light and a condensation optical system configured to condense the pulse laser beam, the laser processing method comprising:
A. a positioning step of performing relative positioning of a beam waist position of the pulse laser beam and the transparent material in an optical axis direction of the pulse laser beam so that the beam waist position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and
B. an irradiation step of irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the beam waist position, wherein
the transparent material is synthetic quartz glass, and the pulse laser beam has a wavelength of 157 nm to 248 nm,
the pulse laser beam is an ArF laser beam, and
the depth ΔZsf is within a range from 0.5 mm to 4 mm inclusive.

2. The laser processing method according to claim 1 , wherein the pulse laser beam has a fluence of 3 J/cm 2 to 15 J/cm 2 inclusive at the beam waist position.

3. The laser processing method according to claim 1 , wherein a number of irradiation pulses of the pulse laser beam is 3,000 or larger.

4. The laser processing method according to claim 3 , wherein the number of irradiation pulses is 35,000 or smaller.

5. The laser processing method according to claim 1 , wherein the pulse laser beam has Gaussian distribution.

6. The laser processing method according to claim 1 , wherein the laser apparatus includes:
a master oscillator; and
an amplifier configured to amplify the pulse laser beam output from the master oscillator.

7. The laser processing method according to claim 6 , wherein the master oscillator includes a solid-state laser device.

8. The laser processing method according to claim 7 , wherein the solid-state laser device includes a wavelength conversion system including a plurality of crystals.

9. The laser processing method according to claim 7 , wherein the solid-state laser device includes a wavelength variable laser device that can change wavelength.

10. A laser processing method that performs laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system including a laser apparatus configured to output a pulse laser beam that is the ultraviolet light and a condensation optical system configured to condense the pulse laser beam, the laser processing method comprising:
A. a positioning step of performing relative positioning of a beam waist position of the pulse laser beam and the transparent material in an optical axis direction of the pulse laser beam so that the beam waist position is set at a position inside the transparent material at a predetermined depth ΔZsf from a surface of the transparent material in the optical axis direction; and
B. an irradiation step of irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 μm to 150 μm inclusive at the beam waist position, wherein
the transparent material is synthetic quartz glass, and the pulse laser beam has a wavelength of 248.1 nm to 248.7 nm,
the pulse laser beam is a KrF laser beam, and
the depth ΔZsf is within a range from 0.5 mm to 4 mm inclusive.

11. The laser processing method according to claim 10 , wherein the pulse laser beam has Gaussian distribution.

12. The laser processing method according to claim 10 , wherein the laser apparatus includes:
a master oscillator; and
an amplifier configured to amplify the pulse laser beam output from the master oscillator.

13. The laser processing method according to claim 12 , wherein the master oscillator includes a solid-state laser device.

14. The laser processing method according to claim 13 , wherein the solid-state laser device includes a wavelength conversion system including a plurality of crystals.

15. The laser processing method according to claim 13 , wherein the solid-state laser device includes a wavelength variable laser device that can change wavelength.

Assignees

• Gigaphoton Inc

Inventors

• Kakizaki Koji
• Kobayashi Masakazu
• Suwa Akira
• Wakabayashi Osamu

Classifications

• H01S5/0612

  controlled by temperature · CPC title

• H01S3/2375

  Hybrid lasers (H01S3/07 takes precedence) · CPC title

• B23K26/02

  Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam · CPC title

• G03F7/70725

  control · CPC title

• G03F7/70333

  Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX] · CPC title