Sputtering equipment and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-11193218-B2
Application number	US-202016811090-A
Country	US
Kind code	B2
Filing date	Mar 6, 2020
Priority date	Mar 29, 2019
Publication date	Dec 7, 2021
Grant date	Dec 7, 2021

Abstract

A sputtering equipment configured to grow a gallium oxide film on a substrate is proposed, and the sputtering equipment may include: a chamber; a stage located in the chamber and configured to secure the substrate thereon; a gallium target located in the chamber and including gallium elements; a first power supply configured to apply voltage to the gallium target; and an oxygen element supplier configured to supply oxygen elements into the chamber.

First claim

What is claimed is:

1. A sputtering equipment configured to grow a gallium oxide film on a substrate, the sputtering equipment comprising:
a chamber;
a stage located in the chamber and configured to secure the substrate thereon;
a gallium target located in the chamber and including gallium elements;
a first power supply configured to apply voltage to the gallium target; and
an oxygen element supplier configured to supply oxygen elements into the chamber.

2. The sputtering equipment or claim 1 , wherein the oxygen element supplier is configured to supply oxygen radicals into the chamber.

3. The sputtering equipment of claim 1 , wherein the oxygen element supplier is configured to supply oxygen-containing gas into the chamber.

4. The sputtering equipment of claim 1 , further comprising a nitrogen element supplier configured to supply nitrogen elements into the chamber.

5. The sputtering equipment of claim 4 , wherein the nitrogen element supplier is configured to supply nitrogen radicals into the chamber.

6. The sputtering equipment of claim 4 , wherein the nitrogen element supplier is configured to supply nitrogen gas into the chamber.

7. The sputtering equipment of claim 1 , wherein the gallium target includes elements functioning as an acceptor in gallium oxide.

8. The sputtering equipment of claim 1 , further comprising:
an acceptor target located in the chamber and including elements functioning as an acceptor in gallium oxide; and
a second power supply configured to apply a voltage to the acceptor target.

9. The sputtering equipment of claim 1 , further comprising a supply amount controller configured to change an amount of the oxygen elements supplied into the chamber by the oxygen element supplier during film formation.

10. A method of manufacturing a semiconductor device by growing a gallium oxide film on a substrate by a sputtering equipment that comprises:
a chamber;
a stage located in the chamber and configured to secure the substrate thereon;
a gallium target located in the chamber and including gallium elements;
a first power supply configured to apply voltage to the gallium target; and
an oxygen element supplier configured to supply oxygen elements into the chamber,
the manufacturing method comprising:
growing the gallium oxide film on a surface of the substrate secured on the stage by depositing gallium elements generated from the gallium target on the surface of the substrate while supplying the oxygen elements into the chamber by the oxygen element supplier and applying voltage to the gallium target by the first power supply.

11. The method of claim 10 , wherein, during the growing of the gallium oxide film, an amount of the oxygen elements supplied by the oxygen element supplier into the chamber is changed.

Assignees

• Denso Corp

Inventors

• Ichikawa Shuhei

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title