Semiconductor device and method for manufacturing the same
US-2016197166-A1 · Jul 7, 2016 · US
Semiconductor device and light-emitting device
US11189642B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11189642-B2 |
| Application number | US-201113223475-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 1, 2011 |
| Priority date | Sep 10, 2010 |
| Publication date | Nov 30, 2021 |
| Grant date | Nov 30, 2021 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of the active second electrode with moisture remaining in the semiconductor device and/or moisture entering from the outside of the device increase the carrier concentration in the oxide semiconductor, which causes a reduction in the reliability of the semiconductor device. An adsorption layer of a hydrogen ion and/or a hydrogen molecule may be provided on the other surface side of the second electrode having one surface in contact with the organic layer. Further, an opening which a hydrogen ion and/or a hydrogen molecule passes through may be provided for the second electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a transistor; and a light-emitting element electrically connected to the transistor, the light-emitting element comprising an electroluminescent layer, wherein a through hole of an electrode of the light-emitting element overlaps with a channel formation region of the transistor. 2. The semiconductor device according to claim 1 , wherein the channel formation region comprises an oxide semiconductor. 3. The semiconductor device according to claim 1 , further comprising: a second transistor electrically connected to the transistor, wherein a second through hole of the electrode of the light-emitting element overlaps with a channel formation region of the second transistor.
Assignees
Inventors
Classifications
including getter material or desiccant · CPC title
- H10D86/423Primary
comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title
- H10D30/6755Primary
Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title
wherein the TFTs are in active matrices · CPC title
characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title
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- What does patent US11189642B2 cover?
- To provide a highly reliable semiconductor device including an oxide semiconductor. Further to provide a highly reliable light-emitting device including an oxide semiconductor. A second electrode sealed together with a semiconductor element including an oxide semiconductor hardly becomes inactive. A hydrogen ion and/or a hydrogen molecule produced by reaction of the active second electrode with…
- Who is the assignee on this patent?
- Hatano Kaoru, Semiconductor Energy Lab
- What technology area does this patent fall under?
- Primary CPC classification H10D86/423. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 30 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).