Precision fabrication of nanosieves

Patent metadata

Field	Value
Publication number	US-11186480-B2
Application number	US-201916276342-A
Country	US
Kind code	B2
Filing date	Feb 14, 2019
Priority date	Feb 14, 2019
Publication date	Nov 30, 2021
Grant date	Nov 30, 2021

Abstract

An exemplary method includes forming a sacrificial layer along sidewalls of an array of trenches that are indented into a substrate, depositing a fill layer over the sacrificial layer, and then creating an array of gaps between the fill layer and the substrate by removing the sacrificial layer along the sidewalls of the trenches, while maintaining a structural connection between the substrate and the fill layer at the floors of the trenches. The method further includes covering the substrate, the fill layer, and the gaps with a cap layer that seal fluid-tight against the substrate and the fill layer. The method further includes indenting a first reservoir and a second reservoir through the cap layer, and into the substrate and the fill layer, across the lengths of the array of gaps, so that the array of gaps connects the first reservoir in fluid communication with the second reservoir.

First claim

What is claimed is:

1. A method comprising:
forming a sacrificial layer along side walls of an array of first trenches that are indented into a surface of a substrate;
depositing a fill layer over the sacrificial layer;
creating an array of gaps between the fill layer and the substrate by removing the sacrificial layer along the side walls of the first trenches, while maintaining a structural connection between the substrate and the fill layer at the floors of the first trenches, wherein the array of gaps extend along the lengths of the array of first trenches;
covering the substrate, the fill layer, and the array of gaps with a cap layer that forms a fluid-tight seal against the substrate and the fill layer; and
indenting a first reservoir and a second reservoir through the cap layer, and into the substrate and the fill layer, across the lengths of the array of gaps, wherein the array of gaps connect the first reservoir in fluid communication with the second reservoir.

2. The method of claim 1 , further comprising:
pressurizing the first reservoir with a fluid having suspended particles; and
draining the fluid from the second reservoir, wherein the array of gaps permit passage of the fluid from the first reservoir into the second reservoir but prevent passage of the suspended particles from the first reservoir into the second reservoir.

3. The method of claim 1 further comprising forming the first trenches in the substrate by reactive-ion etching.

4. The method of claim 1 further comprising maintaining a structural connection between the substrate and the fill layer by removing the sacrificial fill layer from floors of the first trenches before depositing the fill layer, so that the fill layer adheres directly to the substrate.

5. The method of claim 1 wherein the substrate is bulk silicon and the fill layer is polysilicon.

6. The method of claim 1 further comprising forming the sacrificial layer with a thickness variation of less than 5 nm.

7. The method of claim 6 further comprising forming the sacrificial layer with a thickness variation of less than 2 nm.

8. The method of claim 7 further comprising forming the sacrificial layer with a thickness variation of less than 5 atoms.

9. The method of claim 1 further comprising forming the sacrificial layer by dry oxidation of the substrate.

10. The method of claim 1 further comprising forming the first trenches by anisotropic etching of the substrate through windows opened in a hard mask overlying the substrate, further comprising opening the windows by lithography.

11. The method of claim 10 further comprising reducing line edge roughness of the lithography process by forming the sacrificial layer with a thickness variation that is less than the line edge roughness.

12. The method of claim 1 further comprising removing the sacrificial layer by a wet etch process that is selective to the sacrificial layer.

13. The method of claim 1 further comprising, after depositing the fill layer, exposing the sacrificial layer by planarizing the fill layer.

14. The method of claim 1 further comprising, after removing the sacrificial layer, depositing a cap layer to close an end of the gap.

Assignees

• IBM

Inventors

• Smith Joshua T
• Gifford Stacey
• Kim Sung-Cheol
• Wunsch Benjamin

Classifications

• B01D71/0213 Primary

  Silicon · CPC title

• B01L2400/0487

  fluid pressure, pneumatics · CPC title

• B81C2201/0132

  Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title

• B01D67/0062

  by micromachining techniques, e.g. using masking and etching steps, photolithography · CPC title

• B01L3/502753

  characterised by bulk separation arrangements on lab-on-a-chip devices, e.g. for filtration or centrifugation · CPC title