Micro light-emitting device module

Patent metadata

Field	Value
Publication number	US-11183622-B2
Application number	US-201916716509-A
Country	US
Kind code	B2
Filing date	Dec 17, 2019
Priority date	Oct 24, 2019
Publication date	Nov 23, 2021
Grant date	Nov 23, 2021

Abstract

A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.

First claim

What is claimed is:

1. A micro light-emitting device module, comprising:
a circuit substrate;
a planarization layer disposed on an upper surface of the circuit substrate and comprising a first surface and a second surface opposite to each other, wherein the second surface is in contact with the upper surface of the circuit substrate; and
a micro light-emitting device disposed on the first surface of the planarization layer, wherein a maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device,
a conductive structure electrically connected to the circuit substrate and the micro light-emitting device, wherein the conductive structure comprises a first pad disposed on the upper surface of the circuit substrate and located in a via of the planarization layer, the first pad is connected to a second pad of the first surface of the planarization layer in the via.

2. The micro light-emitting device module according to claim 1 , wherein the maximum height difference of the second surface of the planarization layer is greater than a maximum height difference of the first surface of the planarization layer.

3. The micro light-emitting device module according to claim 2 , wherein a ratio of the maximum height difference of the first surface of the planarization layer to the maximum height difference of the second surface of the planarization layer is less than or equal to 0.1.

4. The micro light-emitting device module according to claim 1 , wherein a maximum height difference of the first surface of the planarization layer is less than the thickness of the micro light-emitting device.

5. The micro light-emitting device module according to claim 1 , wherein a ratio of the thickness of the micro light-emitting device to the maximum height difference of the second surface of the planarization layer is less than 0.5.

6. The micro light-emitting device module according to claim 1 , wherein the maximum height difference of the second surface of the planarization layer is greater than a width of the micro light-emitting device.

7. The micro light-emitting device module according to claim 1 , wherein the first pad and the second pad are not integrally formed.

8. The micro light-emitting device module according to claim 1 , wherein a material of the first pad is different from a material of the second pad.

9. The micro light-emitting device module according to claim 1 , wherein a resistance of the first pad is greater than a resistance of the second pad.

10. The micro light-emitting device module according to claim 1 , wherein a ratio of an area of a projection of the second pad onto the circuit substrate to an area of a projection of the first pad onto the circuit substrate is greater than 1 and less than or equal to 10.

11. The micro light-emitting device module according to claim 1 , wherein the micro light-emitting device comprises a third pad electrically connected to the second pad, an area of a projection of the second pad onto the circuit substrate being greater than an area of a projection of the third pad onto the circuit substrate, and the area of the projection of the third pad onto the circuit substrate being greater than an area of a projection of the first pad onto the circuit substrate.

12. The micro light-emitting device module according to claim 1 , wherein the planarization layer extends to a portion of a top surface of the first pad.

13. The micro light-emitting device module according to claim 1 , wherein an area of a projection of the second pad onto the circuit substrate is greater than an area of a projection of the first pad onto the circuit substrate, and the area of the projection of the first pad onto the circuit substrate is greater than an area of a projection of the via onto the circuit substrate.

14. The micro light-emitting device module according to claim 1 , wherein the second pad covers the first pad.

15. The micro light-emitting device module according to claim 1 , wherein the micro light-emitting device comprises a third pad electrically connected to the second pad, and the second pad comprises a groove facing the third pad.

16. The micro light-emitting device module according to claim 1 , wherein a projection of the micro light-emitting device onto the circuit substrate does not overlap a projection of the via onto the circuit substrate.

17. The micro light-emitting device module according to claim 1 , wherein a projection of the micro light-emitting device onto the circuit substrate does not overlap a projection of the first pad onto the circuit substrate.

18. The micro light-emitting device module according to claim 1 , wherein the second pad is recessed in or flush with the first surface of the planarization layer.

19. The micro light-emitting device module according to claim 1 , wherein the planarization layer comprises at least two vias, a length of one of the at least two vias that is close to an edge of the planarization layer being less than a length of one of the at least two vias that is far away from the edge of the planarization layer.

20. The micro light-emitting device module according to claim 1 , wherein a Young's modulus of the planarization layer is greater than a Young's modulus of the circuit substrate.

Assignees

• Playnitride Display Co Ltd

Inventors

• Li Yun-Li
• Lin Tzu-Yang
• Lai Yu-Hung
• Chen Pei-Hsin
• Shih Yi-Chun

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/8506

  Containers · CPC title

• H10H20/857 Primary

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H05K1/0298

  Multilayer circuits · CPC title

• H05K1/113 Primary

  Via provided in pad; Pad over filled via · CPC title