Process for the generation of thin inorganic films

Patent metadata

Field	Value
Publication number	US-11180852-B2
Application number	US-201716322999-A
Country	US
Kind code	B2
Filing date	Aug 23, 2017
Priority date	Aug 31, 2016
Publication date	Nov 23, 2021
Grant date	Nov 23, 2021

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process for the generation of inorganic films comprising depositing the compound of general formula (I) onto a solid substrate (I), wherein M is Mn, Ni or Co, X is a ligand which coordinates M, n is 0, 1, 2, 3, or 4, R 1 is an alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group, R 2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group, p and q are 1 or 2, wherein p+q=3, and m is 1, 2, or 3.

First claim

The invention claimed is:

1. A compound of formula (I)

wherein M is Mn, Ni or Co,
X is a ligand which coordinates M, wherein at least one X coordinates M via a nitrogen atom,
n is 0, 1, 2, 3, or 4,
R 1 is an unsubstituted alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group,
R 2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group,
p and q are 1 or 2, wherein p+q=3, and
m is 1, 2, or 3.

2. The compound according to claim 1 , wherein M is Co, m is 1, and n is 2.

3. The compound according to claim 1 , wherein R 1 and R 2 are each independently methyl, ethyl, iso-propyl or tert-butyl.

4. The compound according to claim 1 , wherein at least one X is bis-(trimethylsilyl)amine.

5. A process for the generation of inorganic films comprising depositing a compound of formula (I) onto a solid substrate

wherein M is Mn, Ni or Co,
X is a ligand which coordinates M,
n is 0, 1, 2, 3, or 4,
R 1 is an unsubstituted alkyl group, an alkenyl group, an aryl group, a halogen, or a silyl group,
R 2 is an alkyl group, an alkenyl group, an aryl group, or a silyl group,
p and q are 1 or 2, wherein p+q=3, and
m is 1, 2, or 3.

6. The process according to claim 5 , wherein R 1 is an unsubstituted alkyl group and R 2 is an alkyl group.

7. The process according to claim 5 , wherein R 1 and R 2 are each independently methyl, ethyl, iso-propyl or tert-butyl.

8. The process according to claim 5 , wherein m is 1.

9. The process according to claim 5 , wherein at least one X is an anionic ligand.

10. The process according to claim 5 , wherein M is Co.

11. The process according to claim 5 , wherein the compound of formula (I) is chemisorbed on the surface of the solid substrate.

12. The process according to claim 5 , wherein the deposited compound of formula (I) is decomposed by removal of all ligands.

13. The process according to claim 12 , wherein the deposited compound of formula (I) is exposed to a reducing agent.

14. The process according to claim 12 , wherein the sequence of depositing the compound of formula (I) onto a solid substrate and decomposing the deposited compound of formula (I) is performed at least twice.

Assignees

• Basf Se

Inventors

• Adermann Torben
• Abels Falko
• Limburg Carolin
• Wilmer Hagen
• Gerkens Jan
• Schneider Sven

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title

• C07F15/065

  without a metal-carbon linkage · CPC title