Method and apparatus for depositing a metal containing layer on a substrate

Patent metadata

Field	Value
Publication number	US-11170998-B2
Application number	US-202016811901-A
Country	US
Kind code	B2
Filing date	Mar 6, 2020
Priority date	Apr 19, 2019
Publication date	Nov 9, 2021
Grant date	Nov 9, 2021

Abstract

The present disclosure provides methods for forming a metal containing material onto a substrate with good film uniformity and stress profile across the substrate. In one embodiment, a method of sputter depositing a metal containing layer on a substrate includes supplying a gas mixture into a processing chamber, forming a first portion of a metal containing layer on a substrate, transferring the substrate from the processing chamber, rotating the substrate, transferring the substrate back to the processing chamber, and forming a second portion of the metal containing layer on the first portion of the metal containing layer.

First claim

What is claimed is:

1. A method of sputter depositing a metal containing layer on a substrate, comprising:
supplying a gas mixture into a processing chamber;
forming a first portion of a metal containing layer on a substrate;
transferring the substrate from the processing chamber;
rotating the substrate outside of the processing chamber;
transferring the substrate back to the processing chamber; and
forming a second portion of the metal containing layer on the first portion of the metal containing layer.

2. The method of claim 1 , further comprising:
performing a surface treatment process on the substrate.

3. The method of claim 2 , wherein the substrate is rotated between about between about 30° and about 270°.

4. The method of claim 2 , wherein the substrate is rotated about 90° or about 180°.

5. The method of claim 2 , further comprising:
rotating the substrate on a support pedestal located outside of the processing chamber.

6. The method of claim 2 , wherein the substrate is rotated by a robot retrieving the substrate from the processing chamber.

7. The method of claim 1 , further comprising:
transferring the substrate to an orientation chamber; and
rotating the substrate in the orientation chamber.

8. The method of claim 7 , wherein the orientation chamber and the processing chamber are incorporated in a cluster processing system.

9. The method of claim 7 further comprising:
performing a surface treatment process on the substrate in the orientation chamber.

10. The method of claim 9 , wherein the surface treatment process alters a film property of the metal containing layer.

11. The method of claim 7 , further comprising:
transferring the substrate back to the processing chamber to confine continue forming the second portion of the metal containing layer; and
transferring the substrate to the orientation chamber for additional substrate rotation.

12. The method of claim 1 , further comprising:
fabricating a target disposed within the processing chamber from at least one of Al, Ti, Ta, W, Cr, Ni, Cu, Co, Nb, Zr, Sc, alloys thereof, or combinations thereof.

13. The method of claim 1 , further comprising:
fabricating a target disposed within the processing chamber from Al.

14. The method of claim 1 , wherein the metal containing layer is AIO, AIN, ScAIN, AION, lead zirconate titanate, lithium niobate or potassium sodium niobate.

15. The method of claim 1 , wherein the metal containing layer has a stress deviation less than 200 MPa.

16. A computer-readable storage medium storing a program, which, when executed by a processor performs an operation for operating a processing chamber, the operation comprising:
performing a deposition process in a processing chamber to form a first portion of a metal containing layer on a substrate;
removing the substrate from the processing chamber;
rotating the substrate; and
transferring the substrate back in the processing chamber to deposit a second portion of the metal containing layer.

17. The computer-readable storage medium of claim 16 , further comprising:
performing a surface treatment process while rotating the substrate.

18. The computer-readable storage medium of claim 16 , further comprising:
rotating the substrate is between about between about 30° and about 270°.

19. The computer-readable storage medium of claim 16 , further comprising:
rotating the substrate on a support pedestal located outside of the processing chamber, wherein the substrate is rotated about 90° or about 180°.

20. The computer-readable storage medium of claim 16 , further comprising:
transferring the substrate to an orientation chamber; and
rotating the substrate in the orientation chamber.

Assignees

• Applied Materials Inc

Inventors

• Sun Lizhong
• Yang Xiaodong
• Covington Mark
• VINIT Vivek
• Agrawal Vishal

Classifications

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title

• H10P14/2925

  Surface structures · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10P14/6349 Primary

  Deposition of epitaxial materials · CPC title

• H10P72/3402

  Mechanical parts of transfer devices · CPC title