Thermal gas sensor, method for measuring the thermal diffusivity of a gas or gas mixture and method for measuring the thermal conductivity of a gas or gas mixture

US11169103B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11169103-B2
Application numberUS-201916654234-A
CountryUS
Kind codeB2
Filing dateOct 16, 2019
Priority dateOct 19, 2018
Publication dateNov 9, 2021
Grant dateNov 9, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A thermal gas sensor for measuring the thermal diffusivity and/or the thermal conductivity of a gas or gas mixture includes a substrate. In the surface of the substrate a trench is formed, as well as at least two conductor structures arranged at a distance from one another on the surface of the substrate. The conductor structures respectively each contain at least two contact sections and a web section connected to the contact sections, the web sections of the conductor structures crossing over the trench at a distance from one another. At least one slot is formed between at least two contact sections of different conductor structures in at least one region of the surface of the substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A measuring device for measuring thermal diffusivity and/or thermal conductivity of a gas or a gas mixture, the measuring device comprising: a thermal gas sensor, containing: a substrate having a surface with a trench formed therein; and at least three conductor structures disposed at a distance from one another on said surface of said substrate, said conductor structures respectively having at least two contact sections and a web section connected to said contact sections, said web section of each of said conductor structures crossing over said trench at a distance from one another; wherein said substrate has at least one slot formed therein between said contact sections of different ones of said conductor structures in at least one region of said surface of said substrate; wherein the measuring device is adapted to apply a time-limited current pulse to a heated conductor structure of said at least three conductor structures of said thermal gas sensor, the measuring device configured to: conduct a time-dependent measurement of an electrical resistance of at least one further conductor structure of said at least three conductor structures and to determine the thermal diffusivity of the gas or the gas mixture from the time-dependent measurement of the electrical resistance of said at least one further conductor structure and a distance of web sections of said conductor structures from one another; and/or measure temperature values by means of at least two further conductor structures of said at least three conductor structures of said thermal gas sensor and to determine the thermal conductivity of the gas or gas mixture from the temperature values of said at least two further conductor structures as well as the distance of the web sections of said at least two further conductor structures from the web section of said heated conductor structure. 2. The measuring device according to claim 1 , wherein said trench extends along a longitudinal direction of said substrate, each said web section of said conductor structures crossing over said trench parallel or essentially parallel to a transverse direction of said substrate. 3. The measuring device according to claim 1 , wherein said slot contains at least one straight section, said slot fully or partially cutting into said region of said surface of said substrate between said at least two contact sections. 4. The measuring device according to claim 1 , wherein said trench and/or said at least one slot is made by etching said substrate in regions. 5. The measuring device according to claim 1 , wherein: said conductor structures are formed at least partially of nickel; and/or said substrate is formed at least partially of silicon and/or silicon nitride. 6. The measuring device according to claim 1 , wherein said slot contains a plurality of straight sections following on from one another, said slot fully or partially cutting into said region of said surface of said substrate between said at least two contact sections. 7. The measuring device according to claim 1 , wherein: said trench has a bottom and at least two walls, said walls extending between said surface of said substrate and said bottom of said trench; and said at least one slot extending from an upper side of said substrate to said bottom of said trench, and/or said at least one slot extending through one of said walls of said trench. 8. The measuring device according to claim 7 , wherein said bottom of said trench is disposed parallel said surface of said substrate. 9. The measuring device according to claim 1 , wherein: said slot has a width of between 1 μm and 50 μm; and/or said trench has a width of between 0.5 mm and 5 mm and/or a depth of between 100 μm and 500 μm. 10. The measuring device according to claim 9 , wherein said width of said slot is between 10 μm and 20 μm. 11. The measuring device according to claim 1 , wherein via said at least two contact sections, said conductor structures can be energized in order to energize said web section of said conductor structures and/or can be contacted in order to measure a resistance of said web section, at least one of said conductor structures having two further contact sections in order to measure a potential drop across said web section. 12. The measuring device according to claim 11 , wherein a conductor structure of said conductor structures forms a resistance thermometer and has four said contact sections and is respectively disposed on said surface of said substrate, on two opposite sides of one of said conductor structures which forms a heating element and has two said contact sections, said slot being formed between said contact sections of said heating element and respectively at least one said contact section of said resistance thermometer.

Assignees

Inventors

Classifications

  • G01N25/20Primary

    by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity (calorimeters per se G01K) · CPC title

  • General constructional details of gas analysers, e.g. portable test equipment (devices for withdrawing samples in the gaseous state G01N1/22) · CPC title

  • G01N25/18Primary

    by investigating thermal conductivity (by calorimetry G01N25/20; by measuring change of resistance of an electrically-heated body G01N27/18) · CPC title

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What does patent US11169103B2 cover?
A thermal gas sensor for measuring the thermal diffusivity and/or the thermal conductivity of a gas or gas mixture includes a substrate. In the surface of the substrate a trench is formed, as well as at least two conductor structures arranged at a distance from one another on the surface of the substrate. The conductor structures respectively each contain at least two contact sections and a web…
Who is the assignee on this patent?
Diehl Metering Gmbh
What technology area does this patent fall under?
Primary CPC classification G01N25/20. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 09 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).