Gallium nitride sintered body or gallium nitride molded article, and method for producing same

US11168393B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11168393-B2
Application numberUS-201816206346-A
CountryUS
Kind codeB2
Filing dateNov 30, 2018
Priority dateDec 20, 2010
Publication dateNov 9, 2021
Grant dateNov 9, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

First claim

Opening claim text (preview).

The invention claimed is: 1. A metal gallium-impregnated gallium nitride molded article, wherein the molded article comprises a gallium nitride phase having voids contained therein and a metal gallium phase which exist as separate phases, and the molded article has a molar ratio of Ga/(Ga+N) of 55% to 80%, wherein said gallium nitride phase has a density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and a composition having an intensity ratio of a gallium oxide peak of the (002) plane to a gallium nitride peak of the (002) plane of less than 3%, as determined by X-ray diffraction analysis. 2. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein not less than 30% of a total volume of said voids contained therein is filled with said metal gallium. 3. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein the molded article has density of 3.20 g/cm 3 to less than 6.05 g/cm 3 . 4. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein the molded article has resistance of not higher than 1 Ω·cm. 5. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein the molded article contains oxygen in an amount of not more than 11 atm %. 6. The metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein said voids contained therein comprise open pores and closed pores, and the volume ratio of said open pores with respect to a total volume of said voids is not less than 70%. 7. A method of producing the metal gallium-impregnated gallium nitride molded article according to claim 1 , wherein the method comprises impregnating a liquid metal gallium into a gallium nitride molded article having density of 2.0 g/cm 3 to less than 5.0 g/cm 3 . 8. The method according to claim 7 , wherein said impregnating the liquid metal gallium into a gallium nitride molded article includes subjecting said gallium nitride molded article and said metal gallium to a vacuum treatment in the same container and then isotropically applying a pressure to said container. 9. The method according to claim 7 , wherein said gallium nitride molded article is obtained by a process comprising: obtaining a molded article by sintering a gallium nitride powder having a specific surface area (BET) of 0.4 m 2 /g to 15 m 2 /g, untamped bulk density of not less than 0.4 g/cm 3 , and a repose angle of not larger than 40°; and heat-treating the obtained molded article in an ammonia-containing atmosphere. 10. The method according to claim 9 , wherein said gallium nitride powder is obtained by subjecting a gallium oxide powder to a nitridation treatment in an ammonia atmosphere at a temperature of 1000° C. to 1100° C. 11. A gallium nitride sputtering target, comprising the metal gallium-impregnated gallium nitride molded article according to claim 1 .

Assignees

Inventors

Classifications

  • Other features · CPC title

  • consisting of metals or metal salts · CPC title

  • Annealing after sintering · CPC title

  • Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

  • Milling · CPC title

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What does patent US11168393B2 cover?
The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to…
Who is the assignee on this patent?
Tosoh Corp
What technology area does this patent fall under?
Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 09 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).