Organic semiconductor device and process for its production
US-9543521-B2 · Jan 10, 2017 · US
US11165045B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11165045-B2 |
| Application number | US-201916261321-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 29, 2019 |
| Priority date | Jun 20, 2018 |
| Publication date | Nov 2, 2021 |
| Grant date | Nov 2, 2021 |
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An organic light-emitting device includes a substrate, an organic light-emitting diode on the substrate, an encapsulation layer sealing the organic light-emitting diode, and an ultraviolet-reflective layer, the encapsulation layer including at least one inorganic layer and at least one organic layer that are alternately stacked, at least one selected from the at least one organic layer included in the encapsulation layer including an ultraviolet-absorbing material, and the ultraviolet-reflective layer consisting of an inorganic material.
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What is claimed is: 1. An organic light-emitting device comprising: a substrate; an organic light-emitting diode on the substrate; an encapsulation layer sealing the organic light-emitting diode; and an ultraviolet-reflective layer, wherein the organic light-emitting diode is between the substrate and the encapsulation layer, the encapsulation layer is between the organic light-emitting diode and the ultraviolet-reflective layer, the encapsulation layer comprises n encapsulation units, in which an inorganic layer and an organic layer are stacked sequentially from the organic light-emitting diode, and wherein n is an integer of 1 or more, at least one selected from n organic layers comprised in the encapsulation layer comprises an ultraviolet-absorbing material, the ultraviolet-reflective layer comprises a plurality of stacking units, in which a first inorganic film having a first refractive index and a second inorganic film having a second refractive index different from the first refractive index are stacked, and the first inorganic film and the second inorganic film each independently consists of at least one selected from group consisting of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, aluminum oxide, aluminum nitride, zinc oxide, titanium oxide, titanium nitride, tantalum oxide, tantalum nitride, hafnium oxide, hafnium nitride, zirconium oxide, zirconium nitride, cerium oxide, cerium nitride, tungsten oxide, tin oxide, tin nitride, and copper oxide. 2. The organic light-emitting device of claim 1 , wherein the plurality of stacking units of the ultraviolet-reflective layer comprises m stacking units, and wherein m is an integer of 3 or more. 3. The organic light-emitting device of claim 1 , wherein a difference between the first refractive index and the second refractive index is 0.15 or more. 4. The organic light-emitting device of claim 1 , wherein the first refractive index is selected from a range of 1.6 to 2.0, and the second refractive index is selected from a range of 1.4 to 1.5. 5. The organic light-emitting device of claim 1 , wherein the ultraviolet-reflective layer has a reflectance of 90% or more with respect to light having a wavelength of 405 nm or less. 6. The organic light-emitting device of claim 1 , wherein the organic layer comprising the ultraviolet-absorbing material has an absorptance of 90% or more with respect to light having a wavelength of 405 nm or less. 7. The organic light-emitting device of claim 1 , wherein the ultraviolet-reflective layer and the organic layer comprising the ultraviolet-absorbing material each independently have a transmittance of 80% or more with respect to light in a visible light region. 8. The organic light-emitting device of claim 1 , wherein the ultraviolet-absorbing material comprises at least one selected from a benzophenone-based compound, a cyanoacrylate-based compound, a benzotriazine-based compound, a benzotriazole-based compound, a triazine-based compound, an oxanilide-based compound, a salicylate-based compound, an ultraviolet-absorbing dye, and a photoluminescent material that absorbs ultraviolet light. 9. The organic light-emitting device of claim 1 , wherein the at least one selected from n organic layers comprises a cured product of an organic layer formation composition comprising a monomer, a photopolymerization initiator, and an ultraviolet-absorbing material. 10. The organic light-emitting device of claim 9 , wherein the monomer comprises at least one selected from a compound represented by Formula 1 and a compound represented by Formula 2: wherein, in Formula 1, R 1 is selected from: hydrogen, deuterium, a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 2 -C 20 alkynyl group, a C 1 -C 20 alkoxy group, a C 6 -C 30 aryl group, and a C 1 -C 30 heteroaryl group; and a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 2 -C 20 alkynyl group, a C 1 -C 20 alkoxy group, a C 6 -C 30 aryl group, and a C 1 -C 30 heteroaryl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, an epoxy group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 2 -C 20 alkynyl group, a C 1 -C 20 alkoxy group, a C 6 -C 30 aryl group, a C 6 -C 30 aryloxy group, a C 6 -C 30 aryloxy group substituted with a C 6 -C 30 aryl group, a C 6 -C 30 arylthio group, and a C 1 -C 30 heteroaryl group, wherein, in Formula 2, L 1 is —O—, —S—, S(═O) 2 —, —C(═O)—, —C(═O)O—, —C(═O)NH—, —N(R 6 )—, —C(R 6 )(R 7 )—, —Si(R 6 )(R 7 )—, or an unbranched C 6 -C 20 alkylene group, m1 is an integer from 1 to 10, R 2 and R 3 are each independently selected from: hydrogen, deuterium, a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 2 -C 20 alkynyl group, and a C 1 -C 20 alkoxy group; and a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 2 -C 20 alkynyl group, and a C 1 -C 20 alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, an epoxy group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C 1 -C 20 alkyl group, a C 2 -C 20 alkenyl group, a C 2 -C 20 alkynyl group, a C 1 -C 20 alkoxy group, a C 6 -C 30 aryl group, a C 6 -C 30 aryloxy group, a C 6 -C 30 aryloxy group substituted with a C 6 -C 30 aryl group, a C 6 -C 30 arylthio group, and a C 1 -C 30 heteroaryl group. 11. The organic light-emitting device of claim 1 , further comprising a lower organic layer between the organic light-emitting diode and the encapsulation layer. 12. A method of manufacturing an organic light-emitting device, the method comprising: providing a substrate; forming an organic light-emitting diode on the substrate; forming an encapsulation layer on the organic light-emitting diode and the substrate; and forming an ultraviolet-reflective layer on the encapsulation layer, wherein the encapsulation layer comprises n encapsulation units, in which an inorganic layer and an organic layer are stacked sequentially from the organic light-emitting diode, and wherein n is an integer of 1 or more, at least one selected from n organic layers comprised in the encapsulation layer comprises an ultraviolet-absorbing material, the ultraviolet-reflective layer comprises a plurality of stacking units, in which a first inorganic film having a first refractive index and a second inorganic film having a second refractive index different from the first refractive index are stacked, and the first inorganic film and the second inorganic film each independently comprises at least one selected from group consisting of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, aluminum oxide, aluminum nitride, zinc oxide, titanium oxide, titanium nitride, tantalum oxide, tantalum nitride, hafnium oxide, hafnium nitride, zirconium oxide, zirconium nitride, cerium oxide, cerium nitride, tungsten oxide, tin oxide, tin nitride, and copper oxide. 13. The method of claim 12 , wherein the ultraviolet-reflective layer is formed by a method of chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), vacuum deposition, or sputtering. 14. The method
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