Light-emitting device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-11158762-B2
Application number	US-202016897046-A
Country	US
Kind code	B2
Filing date	Jun 9, 2020
Priority date	Apr 20, 2015
Publication date	Oct 26, 2021
Grant date	Oct 26, 2021

Abstract

A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack on the first portion, including a first upper surface and a first side wall; and a second semiconductor stack on the first upper surface, including a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface; wherein the first semiconductor stack includes a dislocation stop layer; and wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.

First claim

What is claimed is:

1. A light-emitting device, comprising:
a substrate having a top surface, wherein the top surface comprises a first portion and a second portion;
a first semiconductor stack on the first portion, comprising a first upper surface and a first side wall; and
a second semiconductor stack on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface;
wherein the first semiconductor stack comprises a dislocation stop layer and a thickness of the dislocation stop layer is between 10 Å and 100 Å,
wherein the dislocation stop layer comprises AlGaN, and
wherein the first side wall and the second portion of the top surface form an acute angle α between thereof.

2. The light-emitting device according to claim 1 , wherein the second semiconductor stack comprises a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer.

3. The light-emitting device according to claim 2 , wherein an Al concentration of the dislocation stop layer is higher than 10 times of an Al concentration of the first semiconductor layer or that of the first semiconductor stack.

4. The light-emitting device according to claim 1 , wherein the dislocation stop layer comprises Al x1 Ga 1-x1 N, and 0.05<x1<0.1.

5. The light-emitting device according to claim 1 , wherein the first side wall comprises a side wall of the dislocation stop layer.

6. The light-emitting device according to claim 1 , further comprising a buffer layer between the first semiconductor stack and the top surface, and wherein the buffer layer comprises GaN or AlN.

7. The light-emitting device according to claim 6 , wherein the first semiconductor stack comprises an undoped layer between the buffer layer and the dislocation stop layer.

8. The light-emitting device according to claim 1 , wherein 30°≤α≤80°.

9. The light-emitting device according to claim 1 , wherein the second side wall and the first upper surface form an obtuse angle β between thereof, and wherein 100°≤β≤170°.

10. The light-emitting device according to claim 1 , wherein the substrate comprises a plurality of first concavo-convex structures on the first portion and a plurality of second concavo-convex structures on the second portion;
wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

11. The light-emitting device according to claim 1 , wherein the first side wall comprises an upper first side wall and a lower first side wall connecting the upper first side wall and the top surface, and wherein an angle between the upper first side wall and the second portion of the top surface is larger than the acute angle α.

12. A light-emitting device, comprising:
a substrate having a top surface, wherein the top surface comprises a first portion and a second portion;
a first semiconductor stack formed on the first portion, comprising a first upper surface and a first side wall;
a second semiconductor stack formed on the first upper surface, comprising a second upper surface and a second side wall, and wherein the second side wall connects the first upper surface,
wherein the first side wall and the second portion of the top surface form an acute angle α between thereof,
wherein the first side wall comprises a plurality of pillars, and
wherein a ratio of an area of the second portion to an area of the top surface is between 0.02 and 0.35.

13. The light-emitting device according to claim 12 , wherein the second portion surrounds the first portion in a top view.

14. The light-emitting device according to claim 12 , further comprising a first electrode on the first upper surface.

15. The light-emitting device according to claim 12 , wherein the top surface further comprises an edge, and the second portion surrounds the first portion and is between the edge and the first portion, and the narrowest distance between the first portion and the edge is between 1 μm and 25 μm.

16. The light-emitting device according to claim 15 , further comprising a first electrode on the first upper surface, wherein the first electrode comprises a first bonding pad and a first finger which extends along the edge.

17. The light-emitting device according to claim 12 , wherein a width of one of the pillars is between 1 μm and 10 μm.

18. The light-emitting device according to claim 12 , further comprising a plurality of voids between the top surface and the first semiconductor stack.

19. The light-emitting device according to claim 12 , wherein the substrate comprises a side surface connects a bottom surface of the substrate and an inclined surface formed between the top surface and the side surface, and wherein the inclined surface is rougher than the side surface.

20. The light-emitting device according to claim 19 , wherein a shortest distance, between the top surface and a border between the inclined surface and the side surface, is between 0.1 μm and 20 μm.

Assignees

• Epistar Corp

Inventors

• Chao Yen-Tai
• Hsu Sen-Jung
• Chang Tao-Chi
• Wen Wei-Chih
• Chen Ou
• Wang yu-shou
• Tu Chun-Hsiang
• Huang Jing-Feng

Classifications

• H10H20/882

  Scattering means (H10H20/82 takes precedence) · CPC title

• H10H20/817

  characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous · CPC title

• H10H20/814

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title