Display apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-11158693-B2
Application number	US-201916575845-A
Country	US
Kind code	B2
Filing date	Sep 19, 2019
Priority date	Oct 4, 2018
Publication date	Oct 26, 2021
Grant date	Oct 26, 2021

Abstract

A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.

First claim

What is claimed is:

1. A display apparatus, comprising:
a base substrate;
an active pattern disposed on the base substrate;
a gate insulation layer disposed on the active pattern;
a gate electrode disposed on the gate insulation layer and overlapping the active pattern;
a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent to about 30 atomic percent;
a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern;
a second insulation layer disposed on the first insulation layer; and
a storage electrode disposed between the first insulation layer and the second insulation layer and overlapping the gate electrode.

2. The display apparatus of claim 1 , wherein the gate electrode comprises:
a conductive layer comprising aluminum (Al) or aluminum alloy;
a first capping layer disposed on the conductive layer and comprising titanium nitride (TiNx); and
a second capping layer disposed on the first capping layer and comprising titanium (Ti).

3. The display apparatus of claim 2 , wherein an atomic ratio of nitrogen and titanium, which is a number of nitrogen atoms divided by a number of titanium atoms, contained in the first capping layer of the gate electrode is about 0.9 to about 1.2.

4. The display apparatus of claim 2 , wherein the active pattern comprises poly silicon.

5. The display apparatus of claim 1 , wherein the first insulation layer comprises silicon (Si), nitrogen (N), and hydrogen (H).

6. The display apparatus of claim 5 , wherein Si—H bond in the first insulation layer is about 0.1 at. % to about 10 at. %.

7. The display apparatus of claim 1 ,
wherein the source electrode and the drain electrode are disposed on the second insulation layer,
the storage electrode comprises:
a conductive layer comprising aluminum (Al) or aluminum alloy;
a first capping layer disposed on the conductive layer and comprising titanium nitride (TiNx); and
a second capping layer disposed on the first capping layer and comprising titanium (Ti).

8. The display apparatus of claim 7 , wherein an atomic ratio of nitrogen and titanium, which is a number of nitrogen atoms divided by a number of titanium atoms, contained in the first capping layer of the gate electrode is about 0.9 to about 1.2.

9. The display apparatus of claim 1 , further comprising:
a via insulation layer disposed on the source and drain electrodes; and
a light emitting structure disposed on the via insulation layer.

10. The display apparatus of claim 9 , wherein the light emitting structure comprises:
a first electrode disposed on the via insulation layer, and electrically connected to the drain electrode;
a light emitting layer disposed on the first electrode; and
a second electrode disposed on the light emitting layer, and
wherein a thin film transistor comprising the active pattern, the gate electrode, the source electrode, and the drain electrode is a driving transistor for supplying a driving current to the light emitting structure.

11. The display apparatus of claim 10 , wherein the first insulation layer comprises silicon (Si), nitrogen (N), and hydrogen (H), and
Si—H bond in the first insulation layer is about 0.1 atomic percent to about 10 atomic percent.

12. The display apparatus of claim 1 , wherein the first insulation layer comprises silicon (Si), nitrogen (N), and hydrogen (H), and
the first insulation layer has a reflective index of about 1.884 to about 2.312.

13. A display apparatus, comprising:
a base substrate;
an active pattern disposed on the base substrate;
a gate insulation layer disposed on the active pattern;
a gate electrode disposed on the gate insulation layer and overlapping the active pattern, the gate electrode comprising:
a conductive layer comprising aluminum (Al) or aluminum alloy;
a first capping layer disposed on the conductive layer and comprising titanium nitride (TiNx); and
a second capping layer disposed on the first capping layer and comprising titanium (Ti);

a first insulation layer disposed on the gate electrode; and
a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.

Assignees

• Samsung Display Co Ltd

Inventors

• Chung Yung Bin
• Woo Yeoungkeol
• Kim Kwanghyun
• Sohn Sangwoo
• Song Dokeun
• Lee Sangwook
• Ha Heon Sik

Classifications

• H10D86/431

  having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/021

  of multiple TFTs · CPC title

• H10D86/481 Primary

  integrated with passive devices, e.g. auxiliary capacitors · CPC title