Capacitor comprising a bismuth metal oxide-based lead titanate thin film

Patent metadata

Field	Value
Publication number	US-11158642-B2
Application number	US-201815893323-A
Country	US
Kind code	B2
Filing date	Feb 9, 2018
Priority date	Feb 9, 2017
Publication date	Oct 26, 2021
Grant date	Oct 26, 2021

Abstract

In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.

First claim

What is claimed is:

1. A system comprising:
a capacitor comprising a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Magnesium Titanate-Lead Zirconate Titanate thin film; and
a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer;
wherein the Bismuth Magnesium Titanate-Lead Zirconate Titanate thin film comprises x[Bi(Mg 0.5 Ti 0.5 )O 3 ]-(1-x)[Pb(Zr y Ti 1-y )O 3 ] with x and y concentrations of 0.3≤x≤0.4 and 0≤y≤0.4.

2. The system of claim 1 wherein the capacitor is in electrical contact with the transistor through a conductor structure.

3. The system of claim 1 , wherein the Bismuth Magnesium Titanate-Lead Zirconate Titanate thin film includes Scandium (Sc).

4. The system of claim 1 , wherein the Bismuth Magnesium Titanate-Lead Zirconate Titanate thin film includes Indium (In).

5. The system of claim 1 , wherein the Bismuth Magnesium Titanate-Lead Zirconate Titanate thin film includes Ytterbium (Yb).

6. The system of claim 1 , wherein the first and the second plates are selected from the group consisting of Ru, Pt, Ir, Rh, Pd, Au, RuO x , IrO x , PdO x , LNO, LSCO, and SrRuO 3 .

7. The system of claim 1 , wherein the capacitor further comprises a seed layer positioned between the ferroelectric material and the first layer.

8. The system of claim 7 , wherein the seed layer includes Lead-Titanate (PbTiO 3 ).

9. The system of claim 1 , wherein the Bismuth Magnesium Titanate-Lead Zirconate Titanate thin film comprises 35% Bi(Mg 0.5 Ti 0.5 )O 3 and 65% PbTiO 3 [35BMT-65PT].

10. The system of claim 1 , wherein the Bismuth Magnesium Titanate-Lead Zirconate Titanate thin film has a zirconium concentration of 0.

11. A system comprising:
a capacitor comprising a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film; and
a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer; wherein the Bismuth Metal Oxide-Based Lead Titanate thin film comprises 35% Bi(Mg 0.5 Ti 0.5 )O 3 and 65% PbTiO 3 [35BMT-65PT].

12. A capacitor comprising a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates, wherein the ferroelectric material comprises x[Bi(Mg 0.5 Ti 0.5 )O 3 ]-(1-x)[Pb(Zr y Ti 1-y )O 3 ] with x and y concentrations of 0.3≤x≤0.4 and 0≤y≤0.4.

13. The capacitor of claim 12 , wherein the ferroelectric material includes Indium (In).

14. The capacitor of claim 12 , wherein the ferroelectric material includes Ytterbium (Yb).

15. The capacitor of claim 12 , wherein x=35 and y=0.

16. A capacitor comprising a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates, wherein the ferroelectric material comprises xBi(Mg 0.5 Ti 0.5 )O 3 -(1-x)PbTiO 3 , wherein x=0.35.

Assignees

• Texas Instruments Inc

Inventors

• Morandi Carl Sebastian
• Trolier-Mckinstry Susan
• Udayakumar Kezhakkedath Ramunni
• Rodriguez John Anthony
• Srinivasan Bhaskar

Classifications

• H10D1/688

  comprising barrier layers to prevent diffusion of hydrogen or oxygen · CPC title

• H10D1/684 Primary

  the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers · CPC title

• H10D1/682

  having dielectrics comprising perovskite structures · CPC title

• H01L28/55

  Electricity · mapped topic

• H01L28/56

  Electricity · mapped topic