Oxide material and semiconductor device
US-2024395942-A1 · Nov 28, 2024 · US
US11158502B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11158502-B2 |
| Application number | US-201514864235-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 24, 2015 |
| Priority date | Sep 25, 2014 |
| Publication date | Oct 26, 2021 |
| Grant date | Oct 26, 2021 |
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Methods of forming porous nano-scale or micro-scale structured materials and structured materials formed thereby. Such methods entail providing a donor material and reacting the donor material to form a compound that deposits on a surface of a substrate to produce nano-scale or micro-scale geometric features of the structured material. In particular embodiments, the donor material is in a solution and the reacting step is performed by contacting the surface of the substrate with the solution and directing heat through the solution onto the surface to locally heat a portion of the solution in contact therewith.
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The invention claimed is: 1. A method of forming a nano-scale or micro-scale discontinuous structured material, the method comprising: providing a substrate having a working surface, at least a portion of the working surface comprising curved surface portions formed by surface cavities and corresponding to nano-scale or micro-scale geometric features of the discontinuous structured material to be formed; combining a donor material and a second material to form a solution, the donor material being a source of metal ions and/or metal complexes, the donor material and the second material initiating a chemical reaction therebetween if the solution is at a reaction temperature and the donor material and the second material being in equilibrium in the solution at a second temperature below the reaction temperature; contacting the working surface of the substrate and the surface cavities therein with the solution while the donor material and the second material are in equilibrium in the solution; using a pulsed laser to generate a pulsed laser beam that is passed along the working surface of the substrate so that reaction zones at the working surface are sequentially locally heated by sequential laser pulses of the pulsed laser beam and then sequentially cooled between each immediately sequential pair of the sequential laser pulses, each of the reaction zones being heated by the sequential laser pulses to at least the reaction temperature to react the donor material and the second material to form nanocrystals of a compound, and each of the reaction zones being cooled between each of the immediately sequential pair of the sequential laser pulses to a temperature below the reaction temperature so that the chemical reaction between the donor material and the second material ceases between each of the immediately sequential pair of the sequential laser pulses and during which the nanocrystals of the compound initially deposit in the surface cavities and thereafter cumulatively self-assemble to form the geometric features of the discontinuous structured material and each of the geometric features extends orthogonally from a corresponding one of the surface cavities and has at least one curved surface corresponding to the curved surface portions of the surface cavities in the working surface of the substrate. 2. The method of claim 1 , wherein the second material is a chalcogenide source. 3. The method of claim 2 , wherein the discontinuous structured material is a porous open-cell structured material and the geometric features thereof comprise open-cell, porous geometric features. 4. The method of claim 2 , wherein the geometric features comprise at least one of nanotubes and nanowires. 5. The method of claim 1 , wherein the pulsed laser beam has an energy density of less than 1×10 7 J/m 2 . 6. The method of claim 1 , further comprising: depositing a support layer on a surface of the discontinuous structured material oppositely-disposed from the substrate after producing the discontinuous structured material; and then dissolving the substrate. 7. The method of claim 1 , wherein the discontinuous structured material is a component of a solar cell, microelectromechanical system, nanoelectronic device, semiconductor device, superconductor device, or mechanical device. 8. The method of claim 1 , further comprising additional curved surface portions on the working surface that are formed by geometric surface features. 9. The method of claim 1 , wherein the discontinuous structured material is a porous open-cell structured material and the geometric features thereof comprise porous open-cell geometric features. 10. The method of claim 1 , wherein the geometric features comprise at least one of nanotubes and nanowires. 11. The method of claim 1 , further comprising: providing a second surface oppositely-disposed from the working surface, the second surface not being contacted by the solution and instead being a heat sink to conduct heat away from the working surface of the substrate; and during the use of the pulsed laser, the second surface conducting heat away from the working surface between the laser pulses.
Nanotubes · CPC title
Microstructure · CPC title
Sulfides · CPC title
using solutions · CPC title
using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title
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