Semiconductor module and semiconductor device

Patent metadata

Field	Value
Publication number	US-11152287-B2
Application number	US-201616340156-A
Country	US
Kind code	B2
Filing date	Nov 8, 2016
Priority date	Nov 8, 2016
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

The present invention is intended to provide a semiconductor module and a semiconductor device that are compatible with various rated currents. A semiconductor module includes a lead frame, and a semiconductor element joined with the lead frame. The lead frame includes a first joining structure and a second joining structure. The first joining structure includes a void part as a part at which the lead frame does not exist, and the second joining structure includes a void part as a part at which the lead frame does not exist. Each of the first joining structure and the second joining structure has a shape such that one of the first joining structure and the second joining structure complements at least part of the void part of the other assuming that the first joining structure and the second joining structure are overlapped.

First claim

The invention claimed is:

1. A semiconductor module comprising:
a lead frame having a first lead frame surface and a second lead frame surface opposite to the first lead frame surface, the first lead frame surface and the second lead frame surface being separated by a lead frame thickness; and
a semiconductor element joined with the lead frame, wherein the lead frame includes
a first joining structure, and
a second joining structure,
the first joining structure is disposed on a first side of the lead frame,
the second joining structure is disposed on a second side of the lead frame facing to the first side,
the first joining structure includes a first side surface facing the first side of the lead frame and a first transverse surface extending transverse to the first side surface along a direction toward the first side of the lead frame and offset from the first lead frame surface, such that a first distance between the first transverse surface and the second lead frame surface is smaller than the lead frame thickness, and the first side surface and the first transverse surface define a void part as a part at which the lead frame does not exist,
the second joining structure includes a second side surface facing the second side of the lead frame and a second transverse surface extending transverse to the second side surface along a direction toward the second side of the lead frame and offset from the second lead frame surface, such that a second distance between the second transverse surface and the first lead frame surface is smaller than the lead frame thickness, and the second side surface and the second transverse surface define a void part as a part at which the lead frame does not exist, and
each of the first joining structure and the second joining structure has a shape, and the first distance and the second distance are in relation to each other, such that one of the first joining structure and the second joining structure complements all of the void part of the other.

2. The semiconductor module according to claim 1 , wherein
the first joining structure includes a through-hole, and
the second joining structure includes a hole.

3. The semiconductor module according to claim 1 , wherein
the first joining structure includes a concave part recessed in a direction perpendicular to a main surface of the lead frame, and
the second joining structure includes a convex part protruding in the direction perpendicular to the main surface of the lead frame.

4. The semiconductor module according to claim 1 , wherein the lead frame contains copper or aluminum.

5. The semiconductor module according to claim 1 , further comprising an insulating member, wherein the insulating member is disposed on a surface of the lead frame opposite to another surface of the lead frame joined with the semiconductor element.

6. The semiconductor module according to claim 5 , further comprising a cooler, wherein the cooler is joined with a surface of the insulating member opposite to another surface of the insulating member on which the lead frame is disposed.

7. The semiconductor module according to claim 1 , further comprising an electrode terminal, wherein the electrode terminal is electrically joined with the lead frame.

8. The semiconductor module according to claim 7 , wherein an external wiring connection hole is provided at a leading end of the electrode terminal.

9. The semiconductor module according to claim 7 , wherein
an incorporated heat pipe extends from the lead frame to the electrode terminal, and
an insulating member is disposed at the electrode terminal.

10. The semiconductor module according to claim 1 , wherein the lead frame incorporates a heat pipe.

11. The semiconductor module according to claim 1 , wherein the semiconductor element includes a wide-bandgap semiconductor.

12. A semiconductor device comprising a plurality of the semiconductor modules according to claim 1 , wherein
among the plurality of the semiconductor modules, the first side of one of the semiconductor modules adjacent to each other is disposed facing to the second side of the other of the semiconductor modules adjacent to each other, and
the first joining structure of one of the semiconductor modules adjacent to each other is electrically joined with the second joining structure of the other of the semiconductor modules adjacent to each other.

13. The semiconductor device according to claim 12 , wherein the first joining structure of one of the semiconductor modules adjacent to each other is electrically joined with the second joining structure of the other of the semiconductor modules adjacent to each other by soldering.

14. The semiconductor device according to claim 12 , wherein the first joining structure of one of the semiconductor modules adjacent to each other is electrically joined with the second joining structure of the other of the semiconductor modules adjacent to each other by screwing.

15. The semiconductor device according to claim 12 , wherein the first joining structure of one of the semiconductor modules adjacent to each other is electrically joined with the second joining structure of the other of the semiconductor modules adjacent to each other by fitting.

16. The semiconductor device according to claim 12 , wherein in each of the plurality of the semiconductor modules, at least a surface of the lead frame on which the semiconductor element is mounted and the semiconductor element are sealed by resin.

Assignees

• Mitsubishi Electric Corp

Inventors

• KOMO Hideo
• Iizuka Arata
• Omaru Takeshi

Classifications

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W70/481

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W90/00

  Package configurations · CPC title