Strain tuning individual quantum dot emission frequencies with local phase transitions

Patent metadata

Field	Value
Publication number	US-11150495-B2
Application number	US-201916421778-A
Country	US
Kind code	B2
Filing date	May 24, 2019
Priority date	May 31, 2018
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

A technique is described to deterministically tune the emission frequency of individual semiconductor photon sources, for example quantum dots. A focused laser is directed at a film of material that changes form when heated (for example, a phase change material that undergoes change between crystal and amorphous forms) overlaid on a photonic membrane that includes the photon sources. The laser causes a localized change in form in the film, resulting in a change in emission frequency of a photon source.

First claim

What is claimed is:

1. A method of tuning quantum emitters, comprising:
providing a photonic membrane diode comprising a plurality of solid-state quantum emitters;
depositing a film comprising HfO 2 on the photonic membrane diode, wherein the film undergoes a change in form upon heating; and
focusing a spot of laser light on the film with power sufficient to induce the change in form in the film,
wherein the change in form causes a strain in the photonic membrane diode and thereby a change in emission frequency of at least one of the plurality solid-state quantum emitters that persists without need for continuing application of the laser light, and
wherein the change in form comprises crystallization of the HfO 2 .

2. The method of claim 1 , wherein the solid-state quantum emitters are selected from the group consisting of quantum dots, diamond, silicon carbide, and transition metal dichalcogenides.

3. The method of claim 2 , wherein the solid-state quantum emitters are quantum dots.

4. The method of claim 1 , wherein the change in form causes a change in emission frequency of only a single solid-state quantum emitter.

5. The method of claim 1 , further comprising a step of measuring the change in emission frequency and repeating the measuring and focusing steps as needed in order to tune the plurality of solid-state quantum emitters to have essentially a single emission frequency.

6. A method of tuning quantum emitters, comprising:
providing a photonic membrane diode comprising a plurality of solid-state quantum emitters and a film comprising HfO 2 overlaid on the photonic membrane diode, wherein the film undergoes a change in form upon heating;
focusing a spot of laser light on the film with power sufficient to induce the change in form in the film,
wherein the change in form causes a strain in the photonic membrane diode and thereby a change in emission frequency of at least one of the plurality solid-state quantum emitters that persists without need for continuing application of the laser light, and
wherein the change in form comprises crystallization of the HfO 2 .

7. The method of claim 6 , wherein the solid-state quantum emitters are selected from the group consisting of quantum dots, diamond, silicon carbide, and transition metal dichalcogenides.

8. The method of claim 7 , wherein the solid-state quantum emitters are quantum dots.

9. The method of claim 6 , wherein the change in form causes a change in emission frequency of only a single solid-state quantum emitter, and further comprising a step of measuring the change in emission frequency and repeating the measuring and focusing steps as needed in order to tune the plurality of solid-state quantum emitters to have essentially a single emission frequency.

Assignees

• Us Gov Sec Navy

Inventors

• Grim Joel Q
• Bracker Allan S
• Carter Samuel
• Gammon Daniel

Classifications

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/822

  Materials of the light-emitting regions · CPC title

• H10H20/817

  characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous · CPC title

• H10H20/01

  Manufacture or treatment · CPC title

• H10H20/812 Primary

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title