Cleaning liquid, cleaning method, and method for producing semiconductor wafer

Patent metadata

Field	Value
Publication number	US-11149231-B2
Application number	US-202016835402-A
Country	US
Kind code	B2
Filing date	Mar 31, 2020
Priority date	Oct 10, 2017
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

A cleaning liquid containing at least one surfactant (A) selected from the group consisting of a polyoxyalkylene alkyl ether phosphoric acid, a polyoxyalkylene alkyl ether acetic acid and a polyoxyalkylene alkyl ether sulfonic acid and a chelating agent (C), which has a pH of 8 or more, and a cleaning liquid containing an oxidizing agent (B) and a chelating agent (C), which has a pH of 8 or more.

First claim

The invention claimed is:

1. A cleaning liquid, comprising:
a surfactant (A); and
a chelating agent (C),
wherein the cleaning liquid has a pH of 8 or more,
wherein the surfactant (A) comprises at least one selected from the group consisting of a polyoxyalkylene alkyl ether phosphoric acid, a polyoxyalkylene alkyl ether acetic acid, and a polyoxyalkylene alkyl ether sulfonic acid, and
wherein the cleaning liquid comprises no further water-soluble polymer beyond the surfactant (A) and, optionally, polyacrylic acid, polyethylene glycol, polypropylene glycol, a derivative thereof, or a mixture of two or more of any of these.

2. The cleaning liquid of claim 1 , wherein the surfactant (A) comprises the polyoxyalkylene alkyl ether phosphoric acid.

3. A cleaning liquid, comprising:
an oxidizing agent (B); and
a chelating agent (C),
wherein the cleaning liquid has a pH of 8 or more, and
wherein the oxidizing agent (B) is present in a range of from 0.00001 to 0.8 mass %.

4. The cleaning liquid of claim 1 , wherein the chelating agent (C) comprises an amino acid and/or polycarboxylic acid.

5. The cleaning liquid of claim 4 , wherein the amino acid is at least one selected from the group consisting of serine and aspartic acid.

6. The cleaning liquid of claim 4 , wherein the polycarboxylic acid comprises tartaric acid.

7. The cleaning liquid of claim 1 , further comprising:
a pH adjusting agent (D).

8. The cleaning liquid of claim 7 , wherein a mass ratio of the chelating agent (C) to the pH adjusting agent (D) is in a range of from 1:1.5 to 1:8.

9. The cleaning liquid of claim 1 , which is suitable for cleaning after chemical mechanical polishing or post-etch cleaning.

10. The cleaning liquid of claim 1 , which is suitable for cleaning a surface where cobalt or a compound containing cobalt is exposed.

11. A cleaning method, comprising:
contacting a semiconductor wafer with the cleaning liquid of claim 1 , thereby cleaning the semiconductor wafer.

12. A method for producing a semiconductor wafer, the method comprising:
cleaning a semiconductor wafer using the cleaning liquid of claim 1 .

13. The cleaning liquid of claim 3 , wherein the chelating agent (C) comprises at least one selected from the group consisting of amino acids and polycarboxylic acids.

14. The cleaning liquid of claim 3 , further comprising:
a pH adjusting agent (D).

15. The cleaning liquid of claim 3 , which is suitable for cleaning after chemical mechanical polishing or post-etch cleaning.

16. The cleaning liquid of claim 3 , which is suitable for cleaning a surface where cobalt or a compound containing cobalt is exposed.

17. A cleaning method, comprising:
contacting a semiconductor wafer with the cleaning liquid of claim 3 , thereby cleaning the semiconductor wafer.

18. A method for producing a semiconductor wafer, the method comprising:
cleaning a semiconductor wafer using the cleaning liquid of claim 3 .

19. A cleaning method, comprising:
contacting a liquid cleaner with a surface comprising exposed cobalt and/or an exposed compound comprising cobalt,
wherein the cleaning liquid comprises a surfactant (A) and a chelating agent (C) and has a pH of 8 or more,
wherein the surfactant (A) comprises a polyoxyalkylene alkyl ether phosphoric acid, a polyoxyalkylene alkyl ether acetic acid, a polyoxyalkylene alkyl ether sulfonic acid, or a mixture or two or more of any of these.

20. The method of claim 19 , wherein the cleaning liquid comprises no further water-soluble polymer beyond the surfactant (A) and, optionally, polyacrylic acid, polyethylene glycol, polypropylene glycol, a derivative thereof, or a mixture of two or more of any of these.

Assignees

• Mitsubishi Chem Corp

Inventors

• Harada Ken
• Takeshita Yutaro
• Shibata Toshiaki
• Takeshita Kan

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C11D3/2082

  Polycarboxylic acids-salts thereof · CPC title

• C11D3/0084

  Antioxidants; Free-radical scavengers · CPC title

• C11D3/2086

  Hydroxy carboxylic acids-salts thereof · CPC title

• C11D3/33

  Amino carboxylic acids · CPC title