Raw material for vapor deposition including organoplatinum compound and vapor deposition method using the raw material for vapor deposition

Patent metadata

Field	Value
Publication number	US-11149045-B2
Application number	US-201816628195-A
Country	US
Kind code	B2
Filing date	Jul 12, 2018
Priority date	Jul 25, 2017
Publication date	Oct 19, 2021
Grant date	Oct 19, 2021

Abstract

A raw material for vapor deposition for producing a platinum thin film or a platinum compound thin film by a vapor deposition method. The raw material for vapor deposition includes an organoplatinum compound represented by the following formula, in which a cyclopentene-amine ligand and an alkyl ligand are coordinated to divalent platinum. The organoplatinum compound of the present invention has moderate thermal stability and can respond flexibly to severe film formation conditions, including a wider film formation area, higher throughput, and the like.(In the formula, R1, R2, and R3 are each any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group, and an isocyano group, each having 4 or less carbon atoms, and R4 and R5 are each an alkyl group having 1 or more and 3 or less carbon atoms.)

First claim

The invention claimed is:

1. A raw material for vapor deposition for producing a platinum thin film or a platinum compound thin film by a vapor deposition method, the raw material for vapor deposition comprising
an organoplatinum compound represented by a following formula, in which a cyclopentene-amine ligand and an alkyl ligand are coordinated to divalent platinum:

(wherein R 1 , R 2 , and R 3 are each any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group, and an isocyano group, each having 4 or less carbon atoms, and
R 4 and R 5 are each an alkyl group having 1 or more and 3 or less carbon atoms).

2. The raw material for vapor deposition according to claim 1 , wherein R 1 and R 2 are each any one of hydrogen, a methyl group, and an ethyl group.

3. The raw material for vapor deposition according to claim 1 , wherein R 3 is hydrogen.

4. The raw material for vapor deposition according to claim 1 , wherein R 4 and R 5 are both methyl groups.

5. A vapor deposition method for a platinum thin film or a platinum compound thin film, comprising:
vaporizing a raw material including an organoplatinum compound into a raw material gas; and heating the raw material gas while introducing the raw material gas onto a substrate surface,
wherein the raw material for vapor deposition defined in claim 1 is used as the raw material.

6. The raw material for vapor deposition according to claim 2 , wherein R 3 is hydrogen.

7. The raw material for vapor deposition according to claim 2 , wherein R 4 and R 5 are both methyl groups.

8. The raw material for vapor deposition according to claim 3 , wherein R 4 and R 5 are both methyl groups.

9. A vapor deposition method for a platinum thin film or a platinum compound thin film, comprising:
vaporizing a raw material including an organoplatinum compound into a raw material gas; and heating the raw material gas while introducing the raw material gas onto a substrate surface,
wherein the raw material for vapor deposition defined in claim 2 is used as the raw material.

10. A vapor deposition method for a platinum thin film or a platinum compound thin film, comprising:
vaporizing a raw material including an organoplatinum compound into a raw material gas; and heating the raw material gas while introducing the raw material gas onto a substrate surface,
wherein the raw material for vapor deposition defined in claim 3 is used as the raw material.

11. A vapor deposition method for a platinum thin film or a platinum compound thin film, comprising:
vaporizing a raw material including an organoplatinum compound into a raw material gas; and heating the raw material gas while introducing the raw material gas onto a substrate surface,
wherein the raw material for vapor deposition defined in claim 4 is used as the raw material.

Assignees

• Tanaka Precious Metal Ind

Inventors

• Harada Ryosuke
• OOTAKE Shigeyuki
• SHIGETOMI Toshiyuki
• Suzuki Kazuharu

Classifications

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title

• H10D64/62

  Electrodes ohmically coupled to a semiconductor · CPC title

• C07F15/0086 Primary

  Platinum compounds · CPC title