Voltage equalization method for use in radiofrequency switch having multiple transistors connected in series and radiofrequency switch

Patent metadata

Field	Value
Publication number	US-11146259-B2
Application number	US-201716474714-A
Country	US
Kind code	B2
Filing date	Dec 31, 2017
Priority date	Dec 31, 2016
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

A voltage equalization method for use in a radiofrequency switch having multiple transistors connected in series and the radiofrequency switch. In the voltage equalization method, capacitors are additionally provided as parasitic capacitances between source electrodes and drain electrodes of transistors (M 1 -MN) connected in series to compose a radiofrequency switch, and voltage drop uniformity is implemented for the transistors (M 1 -MN) by adjusting the parasitic capacitances of the transistors (M 1 -MN). By means of different combinations of the positions, sizes, and spacing of metal bars on a first metal layer ( 1 ) and on a second metal layer ( 2 ), the parasitic capacitances between the source electrodes and the drain electrodes of the transistors (M 1 -MN) can be finely adjusted, thus increasing the voltage drop uniformity of the transistors (M 1 -MN). The method uses less transistors to accomplish the design of the radiofrequency switch.

First claim

What is claimed is:

1. A voltage equalization method for a multi-transistor series radiofrequency switch, wherein a parasitic capacitor is implemented by a metal strip arranged on each transistor and a respective metal layer of each transistor between a source and a drain of each of transistors connected in series to form the radiofrequency switch, the parasitic capacitor comprises an intra-layer parasitic capacitor between metal strips on same metal layer and an interlayer parasitic capacitor between metal strips on adjacent metal layers, wherein:
by adjusting the intra-layer parasitic capacitor and the interlayer parasitic capacitor of each transistor, a voltage drop uniformity of each transistor is achieved, wherein the intra-layer parasitic capacitor is used for major compensation and the interlayer parasitic capacitor is used for minor adjustment.

2. The voltage equalization method according to claim 1 , wherein
a size of the metal strips is increased/decreased in a grid width direction to enlarge/reduce an area of the parasitic capacitor between the metal strips, so that the intra-layer parasitic capacitor is enlarged/reduced.

3. The voltage equalization method according to claim 1 , wherein
a gap between the metal strips is enlarged/reduced in a grid length direction to enlarge/reduce a gap between capacitor plates, so that the intra-layer parasitic capacitor is reduced/enlarged.

4. The voltage equalization method according to claim 1 , wherein
there are M second metal strips, which are connected respectively to M first metal strips in a first metal layer, so that the M second metal strips and N+1−M metal strips in the first metal layer compose interlayer parasitic capacitors, wherein M is a positive integer and not greater than N.

5. A radiofrequency switch, composed by sources and drains of N transistors which are connected in sequence to form a series structure comprising N+1 nodes, wherein N is a positive integer;
each node is connected to a first metal strip on a first metal layer through a metal and silicon contact hole, a second metal layer is provided with one or more second metal strips, and the second metal strip is connected to part of the first metal strip; the first metal strips, the second metal strips and the N+1 nodes compose N parasitic capacitors; and
by adjusting a size and gap of the first metal strips, a size and gap of the second metal strips and a positional relation between the first metal strips and the second metal strips, the sizes of the N parasitic capacitors are adjusted respectively, wherein the parasitic capacitor comprises an intra-layer parasitic capacitor between metal strips on same metal layer and an interlayer parasitic capacitor between metal strips on adjacent metal layers, the intra-layer parasitic capacitor is used for major compensation and the interlayer parasitic capacitor is used for minor adjustment.

6. A communication terminal, wherein the communication terminal comprises the radiofrequency switch according to claim 5 .

7. The radiofrequency switch according to claim 5 , wherein
the size of the metal strips is increased/decreased in a grid width direction to enlarge/reduce an area of the parasitic capacitor between the metal strips, so that the intra-layer parasitic capacitor is enlarged/reduced.

8. The radiofrequency switch according to claim 5 , wherein
the gap between the metal strips is enlarged/reduced in a grid length direction to enlarge/reduce a gap between capacitor plates, so that the intra-layer parasitic capacitor is reduced/enlarged.

9. The radiofrequency switch according to claim 5 , wherein
there are M second metal strips, which are connected respectively to M first metal strips in the first metal layer, so that the M second metal strips and N+1−M metal strips in the first metal layer compose interlayer parasitic capacitors, wherein M is a positive integer and not greater than N.

Assignees

• Vanchip Tianjin Tech Co Ltd

Inventors

• Bai Yunfang
• Lin Sheng

Classifications

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H10D1/692

  Electrodes · CPC title

• H03K17/102 Primary

  in field-effect transistor switches · CPC title

• H03K17/6871

  the output circuit comprising more than one controlled field-effect transistor · CPC title

• H03K17/56

  by the use, as active elements, of semiconductor devices (using diodes H03K17/74) · CPC title