Resistive random access memory device

Patent metadata

Field	Value
Publication number	US-11145812-B2
Application number	US-201715784689-A
Country	US
Kind code	B2
Filing date	Oct 16, 2017
Priority date	Jun 12, 2014
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

A resistive random access memory device includes a first electrode; a solid electrolyte made of metal oxide extending onto the first electrode; a second electrode able to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes; an interface layer including a transition metal from groups 3, 4, 5 or 6 of the periodic table and a chalcogen element; the interface layer extending onto the solid electrolyte made of metal oxide, the second electrode extending onto the interface layer.

First claim

The invention claimed is:

1. A method of manufacturing a resistive random access memory device, the method comprising:
forming a first electrode;
forming, on the first electrode, a solid electrolyte made of metal oxide extending at least partially onto the first electrode;
forming, on the solid electrolyte made of metal oxide, an interface layer;
forming, on the interface layer, a soluble second electrode, the soluble second electrode being configured to supply mobile ions circulating in the solid electrolyte made of metal oxide to the first electrode to form a conductive filament between the first electrode and the soluble second electrode when a voltage is applied between the first electrode and the soluble second electrode,
wherein said forming, on the solid electrolyte made of metal oxide, of the interface layer comprises the following sub-steps:
(i) a first sub-step of depositing, on the solid electrolyte made of metal oxide, a layer comprising a chalcogen element and a soluble conductive element;
(ii) after the first sub-step, a second sub-step of depositing, on the layer comprising the chalcogen element and the soluble conductive element, a layer comprising a transition metal from groups 3, 4, 5 or 6 of the periodic table; and
(iii) after the second sub-step, a third sub-step of thermal annealing for at least partially diffusing the transition metal into the layer comprising the chalcogen element and the soluble conductive element, and for obtaining the interface layer; and

wherein said forming, on the interface layer, of the soluble second electrode comprises depositing, on the interface layer, an ion source layer comprising the soluble conductive element, said depositing, on the interface layer, of the ion source layer being carried out after said third sub-step of thermal annealing.

2. The method according to claim 1 , wherein forming the soluble second electrode comprises:
depositing, on the ion source layer comprising the soluble conductive element, a diffusion barrier made from a conductive material;
depositing, on the diffusion barrier, an electrical contact layer made from a conductive material;
the ion source layer, the diffusion barrier and the electrical contact layer forming the soluble second electrode, the diffusion barrier being configured to limit at least partially the diffusion of the conductive material of the electrical contact layer to the ion source layer over a given temperature range.

3. The method according to claim 1 , wherein the transition metal is from groups 3, 4, 5 or 6 of the periodic table is titanium (Ti).

4. The method according to claim 1 , wherein the chalcogen element is tellurium (Te).

5. The method according to claim 1 , wherein the layer comprising the transition metal from groups 3, 4, 5 or 6 of the periodic table is deposited in contact with the layer comprising the chalcogen element and the soluble conductive element.

6. The method according to claim 1 , wherein the layer comprising the chalcogen element and the soluble conductive element is a single layer.

7. The method according to claim 1 , wherein the layer comprising the chalcogen element and the soluble conductive element and the layer comprising the transition metal from groups 3, 4, 5 or 6 of the periodic table are the only two layers deposited for forming the interface layer before performing the thermal annealing.

8. The method according to claim 1 , wherein the layer comprising the chalcogen element and the soluble conductive element is the only layer deposited between the solid electrolyte made of metal oxide and the layer comprising the transition metal from groups 3, 4, 5 or 6 of the periodic table.

Assignees

• Commissariat Energie Atomique

Inventors

• Molas Gabriel
• Blaise Philippe
• Dahmani Faiz
• Vianello Elisa

Classifications

• G11C13/0011 Primary

  comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs] · CPC title

• G11C2213/56

  Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way · CPC title

• H01L45/08

  Electricity · mapped topic

• H01L45/12

  Electricity · mapped topic

• H01L45/146

  Electricity · mapped topic