Apparatus and method for treating substrate

US11145524B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11145524-B2
Application numberUS-202016936041-A
CountryUS
Kind codeB2
Filing dateJul 22, 2020
Priority dateJul 22, 2019
Publication dateOct 12, 2021
Grant dateOct 12, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An apparatus for treating a substrate using a process gas includes a chamber having a treatment space defined therein, a substrate support unit for supporting the substrate in the treatment space, a gas supply pipe disposed in a ceiling surface of the chamber for supplying the process gas to the treatment space, and an exhaust unit for exhausting the process gas in the treatment space, wherein the exhaust unit includes an exhaust plate having an exhaust hole defined therein through which the process gas is exhausted, and an adjustment plate overlapping the exhaust plate, wherein the adjustment plate is constructed to control an opened amount of the exhaust hole when viewed from above.

First claim

Opening claim text (preview).

What is claimed is: 1. An apparatus for treating a substrate using a process gas, the apparatus comprising: a chamber having a treatment space defined therein; a substrate support unit for supporting the substrate in the treatment space; a gas supply pipe disposed in a ceiling surface of the chamber for supplying the process gas to the treatment space; and an exhaust unit for exhausting the process gas in the treatment space, wherein the exhaust unit includes: an exhaust plate having an exhaust hole defined therein through which the process gas is exhausted; and an adjustment plate overlapping the exhaust plate, wherein the adjustment plate is constructed to control an opened amount of the exhaust hole when viewed from above, wherein the exhaust plate and adjustment plate are disposed between the ceiling surface of the chamber and the substrate placed on the substrate support unit. 2. The apparatus of claim 1 , wherein when viewed from above, the exhaust hole does not overlap the substrate placed on the substrate support unit. 3. The apparatus of claim 2 , wherein the apparatus further comprises a counterpart plate facing away the substrate placed on the substrate support unit, wherein the supply pipe is connected to a center of the counterpart plate, and wherein the exhaust plate is constructed to surround the counterpart plate. 4. The apparatus of claim 3 , wherein the counterpart plate and the exhaust plate are integrally formed with each other. 5. The apparatus of claim 2 , wherein the adjustment plate is stacked on the exhaust plate, wherein the adjustment plate has an adjustment hole corresponding to the exhaust hole. 6. The apparatus of claim 5 , wherein the adjustment plate is located above the exhaust plate. 7. The apparatus of claim 6 , wherein the supply pipe is installed in a center of the ceiling surface, wherein the exhaust hole includes a plurality of exhaust holes, wherein the adjustment plate is constructed to vary an overlapping amount between the adjustment hole and the exhaust hole when viewed from above. 8. The apparatus of claim 7 , wherein the plurality of exhaust holes are spaced apart from each other, wherein the adjustment hole includes a plurality of adjustment holes spaced apart from each other, wherein the plurality of exhaust holes are arranged such that a series thereof forms a ring shape, wherein the plurality of adjustment holes are arranged such that a series thereof forms a ring shape. 9. The apparatus of claim 8 , wherein each of the exhaust hole and the adjustment hole extends in an arc shape. 10. The apparatus of claim 7 , wherein the adjustment plate rotates about a central axis thereof to vary the overlapping amount between the adjustment hole and the exhaust hole. 11. The apparatus of claim 2 , wherein the counterpart plate is between the ceiling surface of the chamber and the substrate placed on the substrate support unit, and wherein the exhaust plate is contacting and extending from an outer peripheral surface of the counterpart plate and contacting an inner surface of the chamber within the treatment space.

Assignees

Inventors

Classifications

  • Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

  • mainly by conduction · CPC title

  • characterised by a plurality of individual support members, e.g. support posts or protrusions · CPC title

  • vertical arrangement · CPC title

  • Apparatus for sealing, encapsulating, glassing, decapsulating or the like · CPC title

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What does patent US11145524B2 cover?
An apparatus for treating a substrate using a process gas includes a chamber having a treatment space defined therein, a substrate support unit for supporting the substrate in the treatment space, a gas supply pipe disposed in a ceiling surface of the chamber for supplying the process gas to the treatment space, and an exhaust unit for exhausting the process gas in the treatment space, wherein …
Who is the assignee on this patent?
Semes Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10P72/0402. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 12 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).