Catalyst material and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-11142836-B2
Application number	US-201816204905-A
Country	US
Kind code	B2
Filing date	Nov 29, 2018
Priority date	Nov 29, 2018
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

A method for manufacturing catalyst material is provided, which includes putting an M′ target and an M″ target into a nitrogen-containing atmosphere, in which M′ is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M″ is Nb, Ta, or a combination thereof. Powers are provided to the M′ target and the M″ target, respectively. Providing ions to bombard the M′ target and the M″ target to sputtering deposit M′ a M″ b N 2 on a substrate, wherein 0.7≤a≤1.7, 0.3≤b≤1.3, and a+b=2, wherein M′ a M″ b N 2 is a cubic crystal system.

First claim

What is claimed is:

1. A catalyst material, having a chemical structure of:
M′ a M″ b N 2 ,
wherein M′ is Ni, Co, Fe, Mn, Cu, or Zn;
M″ is Nb, Ta, or a combination thereof;
0.7≤a≤1.7, 0.3≤b≤1.3, and a+b=2,
wherein the catalyst material is a cubic crystal system.

2. The catalyst material as claimed in claim 1 , wherein M′ is Ni, M″ is Nb, 0.7≤a≤1.51, and 0.49≤b≤1.30.

3. A method for manufacturing the catalyst material as claimed in claim 1 , comprising:
putting an M′ target and an M″ target into a nitrogen-containing atmosphere, wherein M′ is Ni, Co, Fe, Mn, Cu, or Zn, and M″ is Nb, Ta, or a combination thereof;
providing power to the M′ target and the M″ target, respectively; and
providing ions to bombard the M′ target and the M″ target, to sputtering deposition of M′ a M″ b N 2 on a substrate, wherein 0.7≤a≤1.7, 0.3≤b≤1.3, and a+b=2,
wherein M′ a M″ b N 2 is a cubic crystal system.

4. The method as claimed in claim 3 , wherein the power provided to the M′ target is 10 W to 200 W, and the power provided to the M″ target is 10 W to 200 W.

5. The method as claimed in claim 3 , wherein the nitrogen-containing atmosphere has a pressure of 1 mTorr to 30 mTorr.

6. The method as claimed in claim 3 , wherein the nitrogen-containing atmosphere comprises carrier gas, and the nitrogen and the carrier gas have a partial pressure ratio of 0.1 to 10.

7. The method as claimed in claim 3 , wherein the substrate comprises a porous conductive layer.

Assignees

• Ind Tech Res Inst

Inventors

• Lin Kuo-Hsin
• Tsai Li-Duan
• Chao Wen-Hsuan
• Lin Yu-Ming
• Yang Pin-Hsin
• Huang Hsiao-Chun
• Huang Chiu-Ping
• Lin Jiunn-Nan

Classifications

• C23C14/352

  using more than one target (C23C14/56 takes precedence) · CPC title

• C25B11/075 Primary

  consisting of a single catalytic element or catalytic compound · CPC title

• C01B21/0622 Primary

  with iron, cobalt or nickel · CPC title

• C01B21/0602

  with two or more other elements chosen from metals, silicon or boron · CPC title

• C23C14/0635

  Carbides · CPC title