Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films

Patent metadata

Field	Value
Publication number	US-11142658-B2
Application number	US-201916537186-A
Country	US
Kind code	B2
Filing date	Aug 9, 2019
Priority date	Feb 13, 2015
Publication date	Oct 12, 2021
Grant date	Oct 12, 2021

Abstract

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:R1Si(NR2R3)(NR4R5)OR6  Iwhere R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.

First claim

The invention claimed is:

1. A bisaminoalkoxysilane compound having a Formula I:
R 1 Si(NR 2 R 3 )(NR 4 R 5 )OR 6   I

wherein R 1 is a methyl group; R 2 and R 4 are each hydrogen atoms; R 3 and R 5 are each selected from the group consisting of tert-butyl and tert-pentyl; and R 6 is selected from a C 1 to C 3 linear alkyl group and a C 3 to C 5 branched alkyl group.

2. The bisaminoalkoxysilane compound of claim 1 wherein the compound is at least one selected from the group consisting of bis(tert-butylamino)methoxymethylsilane, bis(tert-butylamino)ethoxymethylsilane, and bis(tert-butylamino)isopropoxymethylsilane.

3. A method for forming a silicon-containing film on at least one surface of a substrate comprising:
providing the substrate in a reactor; and
forming the silicon-containing film on the at least one surface by a deposition process selected from the group consisting of atomic layer deposition (ALD), plasma enhanced ALD (PEALD), and plasma enhanced cyclic CVD (PECCVD) using at least one precursor comprising a bisaminoalkoxysilane having Formula I:
R 1 Si(NR 2 R 3 )(NR 4 R 5 )OR 6   I

where R 1 is a methyl group; R 2 and R 4 are each hydrogen atoms; R 3 and R 5 are each selected from the group consisting of tert-butyl and tert-pentyl; and R 6 is selected from a C 1 to C 3 linear alkyl group and a C 3 to C 5 branched alkyl group.

4. A silicon-containing film formed using the compound of claim 1 .

5. The silicon-containing film formed according to the method of claim 3 .

Assignees

• Versum Mat Us Llc

Inventors

• Spence Daniel P
• Lei Xinjian
• Pearlstein Ronald Martin
• Xiao Manchao
• Li Jianheng

Classifications

• C07F7/1804

  Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896) · CPC title

• C09D4/00

  Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond {; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16} · CPC title

• C09D183/08

  containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen · CPC title

• C23C16/345

  Silicon nitride · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title