Thermoelectric conversion element and method of manufacturing the same
US-2018145238-A1 · May 24, 2018 · US
US11127891B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11127891-B2 |
| Application number | US-201816304085-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 12, 2018 |
| Priority date | Mar 9, 2017 |
| Publication date | Sep 21, 2021 |
| Grant date | Sep 21, 2021 |
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A novel compound semiconductor that can be used for a solar battery, a thermoelectric material, and the like, and use thereof. The novel compound semiconductor may be represented by the following Chemical Formula: NdxSyCo4Sb12-zQz, wherein Q is one or more selected from the O, Se, or Te, 0<x<0.2, 0<y≤1, and 0<z<12.
Opening claim text (preview).
The invention claimed is: 1. A compound semiconductor represented by the following Chemical Formula 1: Nd x S y Co 4 Sb 12-z Q z [Chemical Formula 1] wherein, in Chemical Formula 1, Q is one or more selected from the group consisting of O, Se, and Te, 0<x<0.2, 0<y≤1, and 0<z<12. 2. The compound semiconductor according to claim 1 , wherein, in Chemical Formula 1, x≤y. 3. The compound semiconductor according to claim 1 , wherein a mole ratio of x to 1 mole of y in Chemical Formula 1 is 0.1 to 1. 4. The compound semiconductor according to claim 1 , wherein the z in Chemical Formula 1 is 0<z≤4. 5. The compound semiconductor according to claim 1 , wherein a mole ratio of x to 1 mole of z in Chemical Formula 1 is 0.01 to 0.5. 6. The compound semiconductor according to claim 1 , wherein a mole ratio of x to 1 mole of z in Chemical Formula 1 is 0.01 to 0.3. 7. A method for preparing the compound semiconductor of claim 1 , comprising the steps of: forming a mixture comprising Nd, S, Co, Sb, and one or more elements selected from the group consisting of O, Se, and Te; and heat treating the mixture. 8. The method for preparing the compound semiconductor according to claim 7 , wherein the heat treating step is conducted at 400° C. to 800° C. 9. The method for preparing the compound semiconductor according to claim 7 , wherein the heat treating step comprises two or more heat treating steps. 10. The method for preparing the compound semiconductor according to claim 7 , further comprising a pressurized sintering step, after the heat treating step. 11. A thermoelectric conversion element comprising the compound semiconductor according to claim 1 . 12. A solar battery comprising the compound semiconductor according to claim 1 . 13. The compound semiconductor according to claim 1 , wherein Nd and S are filled at a ratio of 1:1 to 1:8.
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