Wafer Map Pattern Detection Based On Supervised Machine Learning
US-2018330493-A1 · Nov 15, 2018 · US
US11127807B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11127807-B2 |
| Application number | US-201916521394-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2019 |
| Priority date | Aug 20, 2018 |
| Publication date | Sep 21, 2021 |
| Grant date | Sep 21, 2021 |
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An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of a display device, the method comprising: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that results from the plasma treatment, wherein etching the conductive layer produces silver particles, wherein the product is a silver halide, and wherein performing the plasma treatment produces the silver halide from the silver particles. 2. The method of claim 1 wherein the silver halide is a silver fluoride. 3. The method of claim 1 , wherein the plasma treatment is performed using a gas including fluorine. 4. The method of claim 3 , wherein the gas includes at least one of CF 4 , C 3 F 6 , C 4 F 8 , SF 6 , NF 3 , CHF 3 , C 5 F 8 , CHF 3 , CH 2 F 2 , C 2 HF 5 , and CH 3 F. 5. The method of claim 1 , wherein the plasma treatment is performed using a gas including CF 4 . 6. The method of claim 5 , wherein the plasma treatment is performed using a gas including N 2 . 7. The method of claim 6 , wherein the plasma treatment is performed using a gas including O 2 . 8. The method of claim 1 , wherein the plasma treatment includes at least one of plasma etching, reactive ion etching, and inductively coupled plasma treatment. 9. The method of claim 1 , wherein the plasma treatment is performed by inductively coupled plasma. 10. The method of claim 1 , wherein the plasma treatment is performed before removing the photosensitive member. 11. The method of claim 10 , further comprising removing the photosensitive member using a stripper in a process step after the plasma treatment, wherein the product is removed in the process step. 12. The method of claim 1 , wherein the product is removed using a cleaning liquid. 13. The method of claim 1 , further comprising forming an electrically conductive pad on the substrate when the transistor is formed, wherein after the removing of the product, a surface of the pad includes a metal fluoride.
Anodes · CPC title
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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