Etching of under bump mettallization layer and resulting device
US-9214436-B2 · Dec 15, 2015 · US
US11123989B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11123989-B2 |
| Application number | US-201816177907-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 1, 2018 |
| Priority date | Nov 27, 2017 |
| Publication date | Sep 21, 2021 |
| Grant date | Sep 21, 2021 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
When the metal constituting a metal layer becoming a diffusion prevention layer is defined as a first metal and the metal constituting a connection terminal is defined as a second metal, in a potential-pH diagram for the first metal-H2O system, the first metal is present in a passivation area or an insensitive area at a potential of the difference between the standard electrode potentials of the first metal and the second metal in a pH range of 1 to 14.
Opening claim text (preview).
What is claimed is: 1. A method for producing a liquid discharge head comprising a substrate provided with an energy generating element that generates energy to be used for discharging a liquid, an electrical wiring layer electrically connected to the energy generating element, a connection terminal disposed on the electrical wiring layer and performing electrical connection to the outside, and a diffusion prevention layer between the connection terminal and the electrical wiring layer; a channel forming member disposed on the substrate and including a resin forming a liquid flow path; and an intermediate layer disposed between the channel forming member and the substrate, the method comprising: disposing a metal layer to form the diffusion prevention layer on the substrate; disposing the connection terminal on the metal layer; etching the metal layer with an acid solution using the connection terminal as a mask to form the diffusion prevention layer; forming a layer that becomes the intermediate layer on the substrate provided with the connection terminal and the diffusion prevention layer, providing a pattern of a photoresist on the layer becoming the intermediate layer, etching the layer becoming the intermediate layer using the pattern as a mask to form an intermediate layer, and peeling the pattern with an alkaline solution; and forming the channel forming member on the intermediate layer, wherein when a metal constituting the metal layer becoming the diffusion prevention layer is defined as a first metal and a metal constituting the connection terminal is defined as a second metal, in a potential-pH diagram for a first metal-H 2 O system, the first metal is present in a passivation area or an insensitive area at a potential of a difference between a standard electrode potentials of the first metal and the second metal in a pH range of 1 to 14. 2. The method for producing the liquid discharge head according to claim 1 , wherein the first metal is any metal selected from Pd, Nb, Rh, Ta, and Pt. 3. The method for producing the liquid discharge head according to claim 1 , wherein the first metal is any metal selected from Pd, Nb, and Rh. 4. The method for producing the liquid discharge head according to claim 1 , wherein the second metal is Au. 5. The method for producing the liquid discharge head according to claim 1 , wherein the acid solution is fluonitric acid. 6. The method for producing the liquid discharge head according to claim 1 , wherein the intermediate layer is at least of polyetheramide or an epoxy resin.
dry etching · CPC title
Electrical connections, e.g. details on electrodes, connecting the chip to the outside... · CPC title
thin film formation by sputtering · CPC title
sacrificial molding · CPC title
photolithography · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.