Semiconductor device, semiconductor laser, and method of producing a semiconductor device

Patent metadata

Field	Value
Publication number	US-11121524-B2
Application number	US-201716334738-A
Country	US
Kind code	B2
Filing date	Sep 15, 2017
Priority date	Nov 1, 2016
Publication date	Sep 14, 2021
Grant date	Sep 14, 2021

Abstract

A semiconductor device according to the present technology includes a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is 0.99-1.0 times a first width, a third width is 0.96-1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of 90% to 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

First claim

The invention claimed is:

1. A semiconductor device, comprising:
a first semiconductor layer having a first conductivity type, wherein a first surface of the first semiconductor layer forms a stripe-shaped ridge;
a second semiconductor layer having a second conductivity type;
an active layer between the first semiconductor layer and the second semiconductor layer, wherein the active layer is in direct contact with a second surface of the first semiconductor layer opposite to the first surface of the first semiconductor layer;
a transparent conductive layer that comprises a transparent conductive material, wherein
the transparent conductive layer contacts the first semiconductor layer on the stripe-shaped ridge, a second width is not less than 0.99 and not more than 1.0 times a first width,
a third width is not less than 0.96 and not more than 1.0 times the second width,
the transparent conductive layer has a uniform thickness within a range of not less than 90% and not more than 110% of the third width,
the first width is a width of a surface of the stripe-shaped ridge in a direction perpendicular to an extending direction of the stripe-shaped ridge,
the second width is a width of a first surface of the transparent conductive layer on a side of the stripe-shaped ridge in the direction, and

the third width is a width of a second surface of the transparent conductive layer opposite to the stripe-shaped ridge in the direction; and
a pad electrode that comprises a conductive material, wherein
the pad electrode comes into contact with the transparent conductive layer,
the transparent conductive layer connects the first semiconductor layer and the pad electrode,
the pad electrode includes an intermediate layer on a connection part between the pad electrode and the transparent conductive layer,
constituent elements of the pad electrode and constituent elements of the transparent conductive layer are fused in the intermediate layer, and
the intermediate layer has a structure having mixed crystals of indium, tin, oxygen, and titanium.

2. The semiconductor device according to claim 1 , further comprising a metal electrode that comprises a metal material, wherein
the metal electrode is on the transparent conductive layer,
the metal electrode includes an intermediate layer on a connection part between the metal electrode and the transparent conductive layer, and
constituent elements of the metal electrode and the constituent elements of the transparent conductive layer are fused in the intermediate layer of the metal electrode.

3. The semiconductor device according to claim 2 , wherein
a fourth width is not less than 0.99 and not more than 1.0 times the third width,
the fourth width is a width of a surface of the metal electrode on a side of the transparent conductive layer in the direction perpendicular to the extending direction of the stripe-shaped ridge.

4. The semiconductor device according to claim 1 , further comprising a dielectric layer over the first semiconductor layer and a side surface of the stripe-shaped ridge, wherein
the dielectric layer insulates the first semiconductor layer and the pad electrode, and
a refractive index of a material of the dielectric layer is smaller than a refractive index of the first semiconductor layer.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Murayama Masahiro

Classifications

• H10F77/254

  comprising a metal, e.g. transparent gold · CPC title

• H01S5/34333

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title

• H01S5/04253 Primary

  having specific optical properties, e.g. transparent electrodes · CPC title

• H01S5/2086

  lateral etch control, e.g. mask induced · CPC title

• H01S2301/176

  Specific passivation layers on surfaces other than the emission facet · CPC title