Micro-electronic electrode assembly

Patent metadata

Field	Value
Publication number	US-11120946-B2
Application number	US-201716077064-A
Country	US
Kind code	B2
Filing date	Jan 27, 2017
Priority date	Feb 12, 2016
Publication date	Sep 14, 2021
Grant date	Sep 14, 2021

Abstract

A micro-electronic electrode assembly having a first electrode arranged on a substrate is provided, wherein the first electrode has a thin layer made of a first electrode material having a solid state lattice, wherein the first electrode material oxidizes upon contact with oxygen-containing compounds and has a perovskite or perovskite-derived crystal structure, and wherein the electrode has a functional surface facing away from the substrate, a separation layer is arranged on the functional surface of the electrode, which prevents an oxidation of the electrode material in the region of the functional surface, the oxidation changing the properties of the electrode. An electrically insulating functional layer is arranged on the separation layer and a second electrode is arranged on the electrically insulating functional layer. According to the invention, advantageously the first electrode material has one of the compounds SrMoO3, SrMoO3-aNa BaMoO3, SrVO3, Of Sr2MoO4, and the separation layer has one of the compounds SeTiO3, DyScO3, GdScO3 or SrHfO3. The functional layer is a compound with the molecular formula BaxSr1−xTi1±yO3±z, preferably Ba0.5Sr0.5TiO3. The electrode assembly forms a varactor.

First claim

The invention claimed is:

1. A microelectronic electrode assembly having a first electrode arranged on a substrate, wherein the first electrode consists of a thin electrode layer composed of a first electrode material, wherein the first electrode material is a compound with the empirical formula A1±xB1±yO3±z or A1+nBn(O1−aNa)3n+1, wherein A is at least one of the elements Ca, Sr or Ba or a mixture of these elements, wherein B is at least one of the elements V, Nb, Ta, Cr, Mo or W or a mixture of these elements and wherein the numerals x, y, and z and a can each assume values of between 0 and 1 and the numeral n can assume values of between 1 and ∞, wherein the first electrode material is oxidizable upon contact with oxygen-containing compounds and comprises a perovskite or perovskite-derived crystal structure and wherein the electrode comprises a functional surface facing away from the substrate, on which functional surface a further layer can be arranged, and having a separation layer composed of a separation-layer material which covers the functional surface of the electrode, wherein the separation layer prevents an oxidation of the electrode material in the region of the functional surface, which oxidation would modify the properties of the electrode,
wherein an electrically insulating functional layer is arranged on the separation layer, a second electrode is arranged on the electrically insulating functional layer, the separation layer comprises a separation-layer solid-state lattice and the functional layer comprises a functional-layer solid-state lattice, and a lattice structure of the separation-layer solid-state lattice is matched to a lattice structure of the functional-layer solid-state lattice, such that the functional layer can be deposited epitaxially on the separation layer.

2. The electrode assembly according to claim 1 , wherein the electrically insulating functional layer has modifiable dielectric properties.

3. The electrode assembly according to claim 1 , wherein the first electrode material is a perovskite oxide, a perovskite ox nitride or a perovskite-based Ruddlesden-Popper structure.

4. The electrode assembly according to claim 1 , wherein the electrode material has a resistivity of less than 100 μΩm.

5. The electrode assembly according to claim 1 r wherein the first electrode material comprises one of the compounds SrMoO3, SrMoO3-aNa BaMoO3, SrVO3, SrNbO3 or Sr2MoO4.

6. The electrode assembly according to claim 1 , wherein the separation layer is a perovskite oxide and comprises a compound with the empirical formula A1±xB1±yO3±z, wherein either A is one of the elements Ca, Sr or Ba or a mixture of these elements and B is one of the elements Ti, Zr or Hf or a mixture of these elements, or wherein A is at least one of the elements La, Pr, Dy, Tb, Sm,Nd or Gd or a mixture of these elements and B is at least one of the elements Sc or Y or a mixture of these elements, and wherein the numerals x, y and z can each assume values of between 0 and 1.

7. The electrode assembly according to claim 6 , wherein the separation layer comprises one of the compounds SrTiO3, SrZrO3, DyScO3, GdScO3 or SrHfO3.

8. The electrode assembly according to claim 1 , wherein the functional layer comprises a compound with the empirical formula BaxSr1−xTi1±yO3±z, preferably Ba0.5Sr0.5TiO3, wherein the numerals x, y and can each assume values of between 0 and 1.

9. The electrode assembly according to claim 1 , wherein a work function of the electrode material and/or an electron affinity of the separation-layer material show a difference which is as great as possible, in particular a difference of more than 0.5 eV relative to an electron affinity of a functional material of the functional layer.

10. The electrode assembly according to claim 1 , wherein the electrode assembly forms a varactor.

11. The electrode assembly according to claim 1 , wherein the thin electrode layer of the first electrode comprises a thin electrode layer solid-state lattice and the separation layer comprises a separation layer solid-state lattice, wherein a lattice structure of the separation layer solid-state lattice is matched to a lattice structure of the thin electrode layer solid-state lattice, such that the separation layer can be deposited epitaxially on the thin electrode layer.

12. The electrode assembly according to claim 1 , wherein the separation layer completely covers a top surface of the electrode layer.

Assignees

• Univ Darmstadt Tech

Inventors

• Radetinac Aldin
• Mani Arzhang
• Komissinskiy Philipp
• Alff Lambert
• Nikfalazar Mohammad

Classifications

• H10D1/696

  comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688) · CPC title

• H10D1/688

  comprising barrier layers to prevent diffusion of hydrogen or oxygen · CPC title

• H01G4/008 Primary

  Selection of materials · CPC title

• H01G4/1227

  based on alkaline earth titanates · CPC title

• H01G4/33

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title