Stripping liquid, stripping method, and electronic-component fabricating method

Patent metadata

Field	Value
Publication number	US-11118110-B2
Application number	US-201916668324-A
Country	US
Kind code	B2
Filing date	Oct 30, 2019
Priority date	Nov 1, 2018
Publication date	Sep 14, 2021
Grant date	Sep 14, 2021

Abstract

According to one embodiment, a stripping liquid is provided. The stripping liquid is for removing a support plate from a stack. The stack includes a substrate, the support plate, and an adhesive. The Adhesive is placed between the substrate and the support plate. The adhesive includes a compound. The compound has a first functional group and a second functional group differing from each other. The stripping liquid includes a first solvent and a second solvent. The second solvent have a polarity higher than the first solvent.

First claim

What is claimed is:

1. A method of fabricating an electronic component, comprising:
providing a stack comprising a substrate, a support plate, and an adhesive placed between the substrate and the support plate, the adhesive comprising a styrene-(meth)-acrylate copolymer;
preparing a stripping liquid consisting of a mixed solvent of a first solvent and a second solvent, the first solvent being selected from the group consisting of ethylbenzene, n-hexane, toluene, and dipropylene glycol methyl ether, and the second solvent being propylene glycol methyl ether acetate; and
bringing the stack into contact with the stripping liquid, thereby removing the support plate from the stack.

2. The method according to claim 1 , wherein a ratio V 1 /V 2 is 0.25 or greater and 2 or below, where V 1 is a volume of the first solve and V 2 is a volume of the second solvent.

3. The method according to claim 1 , wherein the stripping liquid has a dispersion component dD of 15 MPa 1/2 or greater and 17 MPa 1/2 or below, a polar-bond component dP of 2 MPa 1/2 or greater and 9 MPa 1/2 or below, and a hydrogen-bond component dH of 4 MPa 1/2 or greater and 9 MPa 1/2 or below as Hansen solubility parameters.

4. The method according to claim 1 , wherein the stripping liquid has a solubility parameter value of 17 MPa 1/2 or greater and 22 MPa 1/2 or below.

5. The method according to claim 1 , wherein the substrate is a semiconductor wafer, and the support plate is of a material selected from the group consisting of a glass material, a resin material, and a metal material.

6. The method according to claim 5 , wherein the support plate has through-holes.

7. A stripping liquid, consisting of a mixed solvent of a first solvent and second solvent, the first solvent being selected from the group consisting of ethylbenzene, n-hexane, toluene, and dipropylene glycol methyl ether, and the second solvent being propylene glycol methyl ether acetate.

8. The stripping liquid according to claim 7 , wherein a ratio V 1 /V 2 is 0.25 or greater and 2 or below, where V 1 is a volume of the first solvent and V 2 is a volume of the second solvent.

9. The stripping liquid according to claim 7 , wherein the stripping liquid has a dispersion component dD of 15 MPa 1/2 or greater and 17 MPa 1/2 or below, a polar-bond component dP of 2 MPa 1/2 or greater and 9 MPa 1/2 or below, and a hydrogen-bond component dH of 4 MPa 1/2 or greater and 9 MPa 1/2 or below as Hansen solubility parameters.

10. The s g liquid according to claim 7 , herein the stripping liquid has a solubility parameter value of 17 MPa 1/2 or greater and 22 MPa 1/2 or below.

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Murakami Yukako
• Uematsu Ikuo

Classifications

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/7442

  Separation by peeling · CPC title

• H10P50/287 Primary

  by chemical means · CPC title