Wire-based microelectromechanical systems (MEMS) apparatus

Patent metadata

Field	Value
Publication number	US-11117799-B2
Application number	US-201916720919-A
Country	US
Kind code	B2
Filing date	Dec 19, 2019
Priority date	Apr 2, 2019
Publication date	Sep 14, 2021
Grant date	Sep 14, 2021

Abstract

A wire-based microelectromechanical systems (MEMS) apparatus is provided. In examples discussed herein, the wire-based MEMS apparatus includes a MEMS control bus and at least one passive MEMS switch circuit. The passive MEMS switch circuit is configured to close a MEMS switch(es) by generating a constant voltage(s) that exceeds a defined threshold voltage (e.g., 30-50 V). In a non-limiting example, the passive MEMS switch circuit can generate the constant voltage(s) based on a radio frequency (RF) voltage(s), which may be harvested from an RF signal(s) received via the MEMS control bus. In this regard, it may be possible to eliminate active components and/or circuits from the passive MEMS switch circuit, thus helping to reduce leakage and power consumption. As a result, it may be possible to provide the passive MEMS switch circuit in a low power apparatus for supporting such applications as the Internet-of-Things (IoT).

First claim

What is claimed is:

1. A wire-based microelectromechanical systems (MEMS) apparatus comprising:
a MEMS control bus configured to communicate a radio frequency (RF) signal modulated to provide an RF voltage in at least one frequency bandwidth; and
at least one passive MEMS switch circuit coupled to the MEMS control bus and comprising:
a voltage circuit corresponding to the at least one frequency bandwidth and configured to generate a constant voltage based on the RF voltage; and
a MEMS switch coupled to the voltage circuit and configured to be closed in response to receiving the constant voltage exceeding a defined threshold voltage.

2. The wire-based MEMS apparatus of claim 1 wherein the MEMS control bus is configured to consist of one wire.

3. The wire-based MEMS apparatus of claim 1 further comprising a MEMS control circuit coupled to the MEMS control bus and configured to:
modulate the RF signal to provide the RF voltage in the at least one frequency bandwidth; and
communicate the RF signal to the at least one passive MEMS switch circuit via the MEMS control bus.

4. The wire-based MEMS apparatus of claim 3 wherein the MEMS control circuit is further configured to amplitude modulate the RF signal to provide the RF voltage in the at least one frequency bandwidth.

5. The wire-based MEMS apparatus of claim 3 further comprising at least one second passive MEMS switch circuit comprising:
a second voltage circuit corresponding to at least one second frequency bandwidth and configured to generate a second constant voltage based on the RF voltage; and
a second MEMS switch coupled to the second voltage circuit and configured to be closed in response to receiving the second constant voltage exceeding the defined threshold voltage.

6. The wire-based MEMS apparatus of claim 5 wherein the MEMS control circuit is further configured to:
modulate the RF signal to provide the RF voltage in the at least one second frequency bandwidth non-overlapping with the at least one frequency bandwidth; and
communicate the RF signal to the at least one second passive MEMS switch circuit via the MEMS control bus.

7. The wire-based MEMS apparatus of claim 6 wherein:
the MEMS control circuit is further configured to operate as a master on the MEMS control bus; and
the at least one passive MEMS switch circuit and the at least one second passive MEMS switch circuit are configured to operate as slaves on the MEMS control bus.

8. The wire-based MEMS apparatus of claim 1 wherein the voltage circuit comprises:
a bulk acoustic wave (BAW) structure coupled to the MEMS control bus and configured to resonate at the at least one frequency bandwidth to convert the RF voltage to a boosted RF voltage higher than the RF voltage; and
a rectifier circuit coupled to the BAW structure and configured to generate the constant voltage based on the boosted RF voltage.

9. The wire-based MEMS apparatus of claim 8 wherein the BAW structure is further configured to block the RF signal outside the at least one frequency bandwidth such that the BAW structure does not convert the RF voltage to the boosted RF voltage and the rectifier circuit does not generate the constant voltage.

10. The wire-based MEMS apparatus of claim 9 wherein the rectifier circuit comprises:
a diode having an anode coupled to the BAW structure and a cathode node coupled to a gate terminal of the MEMS switch, the diode configured to generate the constant voltage based on the boosted RF voltage in response to the BAW structure generating the boosted RF voltage; and
a holding capacitor coupled between the cathode node and a ground, the holding capacitor configured to smooth the constant voltage.

11. The wire-based MEMS apparatus of claim 10 wherein the rectifier circuit further comprises a pull-down resistor coupled in parallel to the holding capacitor between the cathode node and the ground and configured to pull the constant voltage down to the ground in response to the BAW structure not generating the boosted RF voltage.

12. The wire-based MEMS apparatus of claim 8 wherein the BAW structure is configured to include an equal number of interleaving polarized BAW devices and polarized inverted BAW devices determined based on the boosted RF voltage.

13. A wire-based microelectromechanical systems (MEMS) apparatus comprising:
a MEMS control bus configured to communicate a radio frequency (RF) signal modulated to provide an RF voltage in at least one frequency bandwidth;
a MEMS control circuit coupled to the MEMS control bus and configured to:
modulate the RF signal to provide the RF voltage in the at least one frequency bandwidth; and
communicate the RF signal via the MEMS control bus; and

at least one passive MEMS switch circuit coupled to the MEMS control bus and comprising:
a voltage circuit corresponding to the at least one frequency bandwidth and configured to generate a constant voltage based on the RF voltage; and
a MEMS switch coupled to the voltage circuit and configured to be closed in response to receiving the constant voltage exceeding a defined threshold voltage.

14. The wire-based MEMS apparatus of claim 13 wherein the MEMS control bus is configured to consist of one wire.

15. The wire-based MEMS apparatus of claim 13 wherein the MEMS control circuit is further configured to amplitude modulate the RF signal to provide the RF voltage in the at least one frequency bandwidth.

16. The wire-based MEMS apparatus of claim 13 wherein the voltage circuit comprises:
a bulk acoustic wave (BAW) structure coupled to the MEMS control bus and configured to resonate at the at least one frequency bandwidth to convert the RF voltage to a boosted RF voltage higher than the RF voltage; and
a rectifier circuit coupled to the BAW structure and configured to generate the constant voltage based on the boosted RF voltage.

17. The wire-based MEMS apparatus of claim 16 wherein the BAW structure is further configured to block the RF signal outside the at least one frequency bandwidth such that the BAW structure does not convert the RF voltage to the boosted RF voltage and the rectifier circuit does not generate the constant voltage.

18. The wire-based MEMS apparatus of claim 17 wherein the rectifier circuit comprises:
a diode having an anode coupled to the BAW structure and a cathode node coupled to a gate terminal of the MEMS switch, the diode configured to generate the constant voltage based on the boosted RF voltage in response to the BAW structure generating the boosted RF voltage; and
a holding capacitor coupled between the cathode node and a ground, the holding capacitor configured to smooth the constant voltage.

19. The wire-based MEMS apparatus of claim 18 wherein the rectifier circuit further comprises a pull-down resistor coupled in parallel to the holding capacitor between the cathode node and the ground and configured to pull the constant voltage down to the ground in response to the BAW structure not generating the boosted RF voltage.

20. The wire-based MEMS apparatus of claim 16 wherein the BAW structure is configured to include an equal number of interleaving polarized BAW devices and polarized inverted BAW devices determined based on the boosted RF voltage.

Assignees

• Qorvo Us Inc

Inventors

• Khlat Nadim
• Aigner Robert

Classifications

• H01H1/0036 Primary

  Switches making use of microelectromechanical systems [MEMS] (for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009) · CPC title

• B81B7/02

  containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] (B81B7/04 takes precedence) · CPC title

• B81B7/0006

  Interconnects · CPC title

• B81B7/008 Primary

  MEMS characterised by an electronic circuit specially adapted for controlling or driving the same (B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00) · CPC title