Semiconductor laser wafer and semiconductor laser

Patent metadata

Field	Value
Publication number	US-11114821-B2
Application number	US-201916704157-A
Country	US
Kind code	B2
Filing date	Dec 5, 2019
Priority date	Feb 27, 2019
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

First claim

What is claimed is:

1. A semiconductor laser wafer, comprising:
a substrate;
a first semiconductor layer provided on the substrate;
an active layer provided on the first semiconductor layer, multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region being stacked in the active layer, the light-emitting multi-quantum well region being made of a first compound semiconductor and a second compound semiconductor, the injection multi-quantum well region being made of the first compound semiconductor and the second compound semiconductor;
a second semiconductor layer provided on the active layer; and
a composition evaluation layer including a first film and a second film and being provided above the active layer, the first film being made of the first compound semiconductor and having a first thickness, the second film being made of the second compound semiconductor and having a second thickness.

2. The wafer according to claim 1 , wherein the composition evaluation layer is provided at least one of on the second semiconductor layer, between the active layer and the second semiconductor layer, or inside the second semiconductor layer.

3. The wafer according to claim 1 , wherein
the first thickness is not less than 5 nm and not more than 30 nm, and
the second thickness is not less than 5 nm and not more than 30 nm.

4. The wafer according to claim 2 , wherein
the first thickness is not less than 5 nm and not more than 30 nm, and
the second thickness is not less than 5 nm and not more than 30 nm.

5. The wafer according to claim 1 , wherein the first compound semiconductor and the second compound semiconductor each are ternary crystals.

6. The wafer according to claim 2 , wherein the first compound semiconductor and the second compound semiconductor each are ternary crystals.

7. The wafer according to claim 3 , wherein the first compound semiconductor and the second compound semiconductor each are ternary crystals.

8. A semiconductor laser, comprising:
a substrate;
a first semiconductor layer provided on the substrate;
an active layer provided on the first semiconductor layer, multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region being stacked in the active layer, the light-emitting multi-quantum well region being made of a first compound semiconductor and a second compound semiconductor, the injection multi-quantum well region being made of the first compound semiconductor and the second compound semiconductor;
a second semiconductor layer provided on the active layer; and
a composition evaluation layer including a first film and a second film and being provided above the active layer, the first film being made of the first compound semiconductor and having a first thickness, the second film being made of the second compound semiconductor and having a second thickness.

9. The laser according to claim 8 , wherein the first compound semiconductor and the second compound semiconductor each are ternary crystals.

10. The laser according to claim 8 , wherein the composition evaluation layer is provided at least one of on the second semiconductor layer, between the active layer and the second semiconductor layer, or inside the second semiconductor layer.

11. The laser according to claim 8 , wherein
the first thickness is not less than 5 nm and not more than 30 nm, and
the second thickness is not less than 5 nm and not more than 30 nm.

Assignees

• Toshiba Kk

Inventors

• Kaneko Kei
• Saito Shinji
• Hashimoto Rei
• Kakuno Tsutomu
• Yamamoto Yuichiro
• Takase Tomohiro

Classifications

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title

• H01S5/3401 Primary

  having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers · CPC title

• H01S2304/00

  Special growth methods for semiconductor lasers · CPC title

• H01S5/0042

  On wafer testing, e.g. lasers are tested before separating wafer into chips · CPC title

• H01S5/3402 Primary

  intersubband lasers, e.g. transitions within the conduction or valence bands · CPC title