Semiconductor sensor

Patent metadata

Field	Value
Publication number	US-11114574-B2
Application number	US-201816624969-A
Country	US
Kind code	B2
Filing date	Jun 13, 2018
Priority date	Jun 20, 2017
Publication date	Sep 7, 2021
Grant date	Sep 7, 2021

Abstract

A semiconductor sensor includes a detector chip that detects green light and an interference filter that optically precedes the detector chip and is permeable to green light and impermeable and reflective to red light and near-infrared radiation. A color filter optically precedes the interference filter. The color filter has a transparency of at least 60% for green light and has an absorbing effect for red light and near-infrared radiation. The semiconductor sensor appears gray or black in the region of the interference filter independently of the angle.

First claim

The invention claimed is:

1. A semiconductor sensor comprising:
a detector chip that detects radiation of a first wavelength range or green light,
an interference filter that optically precedes the detector chip and is permeable to the radiation of the first wavelength range or the green light, and impermeable and reflective to radiation of a second wavelength range or red or near-infrared light,
a color filter that optically precedes the interference filter,
wherein
the color filter has a transparency of at least 60% for the first wavelength range or green light, and absorbs radiation of the second wavelength range or red or near-infrared light, and
the semiconductor sensor appears gray or black to an observer in a region of the interference filter independently of the angle,
the interference filter comprises at least one refractive index matching layer that delimits the interference filter toward the color filter, and
a cast body in which the interference filter and the detector chip are embedded,
wherein the cast body contains least one plastic to which at least one filter material is added, and
the cast body extends across the interference filter so that the color filter is formed by the part of the cast body extending across the interference filter.

2. The semiconductor sensor according to claim 1 ,
wherein the color filter has an average thickness of 0.1 μm to 5 μm and is based on at least one plastic, and
the first wavelength range is the green light and the second wavelength range is the red or near-infrared light.

3. The semiconductor sensor according to claim 1 , wherein the cast body extends with a thickness of 0.1 mm to 1 mm across the interference filter.

4. The semiconductor sensor according to claim 1 , wherein the color filter comprises one or more of: a cyanine, an azo dye, organometallic complexes, organometallic colloids, and a copper II compound.

5. The semiconductor sensor according to claim 1 , wherein the color filter comprises or consists of a metal dielectric filter, and the color filter is thinner than the interference filter.

6. The semiconductor sensor according to claim 1 ,
wherein the interference filter is a high-pass filter that exhibits a cutoff wavelength of 630 nm to 680 nm in a perpendicular incidence of light, and
a step width of the transmittance at the cutoff wavelength is 10 nm to 40 nm.

7. The semiconductor sensor according to claim 1 , wherein the color filter alone continuously exhibits a transmittance of at least 20% in the wavelength of 600 nm to 1.1 μm.

8. The semiconductor sensor according to claim 1 , wherein the interference filter alone appears reddish to an observer and the color filter alone appears green.

9. The semiconductor sensor according to claim 1 ,
wherein the detector chip is a one-channel design and based on silicon, and
a detection surface of the detector chip is 0.5×0.5 mm 2 to 5×5 mm 2 .

10. The semiconductor sensor according to claim 1 ,
wherein the interference filter comprises a plurality of alternating layers having a high and low refractive index, and
the interference filter alone exhibits an angle-dependent colored reflection.

11. The semiconductor sensor according to claim 1 ,
wherein the interference filter comprises a first layer stack and a second layer stack,
the first layer stack exhibits a design wavelength for a reflection of 0.6 μm to 0.9 μm, and
the second layer stack exhibits a design wavelength for a reflection of 0.8 μm to 1.1 μm.

12. The semiconductor sensor according to claim 1 , wherein the color filter is limited to the interference filter when viewed in plan view.

13. The semiconductor sensor according to claim 1 , wherein a gradual refractive index transition in a direction away from the detector chip toward the color filter is achieved by the refractive index matching layer.

14. The semiconductor sensor according to claim 1 , wherein the interference filter is applied directly to the detector chip.

15. The semiconductor sensor according to claim 1 , wherein said semiconductor sensor is configured for pulse measurement.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Dietze Daniel
• Boescke Tim
• Zinkl Wolfgang

Classifications

• H10F77/331 Primary

  for filtering or shielding light, e.g. multicolour filters for photodetectors · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F39/805

  Coatings · CPC title

• H10F39/107

  having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays · CPC title

• H10F77/337 Primary

  using interference filters, e.g. multilayer dielectric filters · CPC title