Thermal emission source
US-2016049897-A1 · Feb 18, 2016 · US
US11112536B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11112536-B2 |
| Application number | US-201716080789-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2017 |
| Priority date | Mar 1, 2016 |
| Publication date | Sep 7, 2021 |
| Grant date | Sep 7, 2021 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A thermal emission source is provided that has a structure capable of suppressing deterioration of an optical assembly over time. The thermal emission source includes an optical assembly ( 1 ) having an optical structure in which a member made of a semiconductor has a refractive index distribution so as to resonate with light of a wavelength shorter than a wavelength that corresponds to an absorption edge corresponding to a band gap of the semiconductor. The optical assembly ( 1 ) includes a coating structure ( 30 ) with a coating material that differs from the semiconductor of refractive portions ( 10 ) and through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted.
Opening claim text (preview).
The invention claimed is: 1. A thermal emission source comprising: an optical assembly having an optical structure in which a member made of a semiconductor has a refractive index distribution so as to resonate with light of a wavelength shorter than a wavelength that corresponds to an absorption edge corresponding to a band gap of the semiconductor, wherein the optical assembly comprises a coating structure for coating the member made of the semiconductor with a coating material through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted, an infrared absorptivity of the coating structure is 0.1% or lower, and the coating material is selected from the group consisting of HfO 2 , MgO, Al 2 O 3 , Y 2 O 3 , and CaF 2 . 2. The thermal emission source according to claim 1 , wherein the coating material is an insulator. 3. The thermal emission source according to claim 2 , wherein the optical assembly has a photonic crystal structure in which a refractive portion that is formed with the member is arranged on an optical substrate whose optical refractive index is smaller than that of the semiconductor. 4. The thermal emission source according to claim 3 , wherein light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted through the optical substrate. 5. The thermal emission source according to claim 3 , wherein an optical refractive index of the coating material is higher than the optical refractive index of the optical substrate. 6. The thermal emission source according to claim 3 , wherein the optical assembly includes a coating structure for coating the optical substrate with a coating material through which light of a wavelength included in a wavelength range from visible light to far infrared rays can be transmitted. 7. The thermal emission source according to claim 3 , wherein the coating structure is a multi-layer structure including coating materials having different optical refractive indexes. 8. The thermal emission source according to claim 3 , wherein the coating material has a melting point higher than the melting point of the semiconductor. 9. The thermal emission source according to claim 3 , wherein the semiconductor is Si, and a peak wavelength of emission light is 1800 nm or shorter. 10. The thermal emission source according to claim 3 , wherein the semiconductor is SiC, and a peak wavelength of emission light is 1100 nm or shorter.
characterised by the shape · CPC title
having particular radiating, reflecting or absorbing features, e.g. for improving heat transfer by radiation · CPC title
Lamps having an incandescent body which is not conductively heated, e.g. heated inductively, heated by electronic discharge (H01K13/00 takes precedence) · CPC title
made of photonic crystals or photonic band gap materials (photonic band-gap structures or photonic lattices in integrated optics G02B6/1225; photonic band-gap structures or photonic lattices in optical fibres G02B6/02295) · CPC title
Heat sinks · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.